TW200633069A - Vertical heat treatment device and application method thereof - Google Patents

Vertical heat treatment device and application method thereof

Info

Publication number
TW200633069A
TW200633069A TW094136612A TW94136612A TW200633069A TW 200633069 A TW200633069 A TW 200633069A TW 094136612 A TW094136612 A TW 094136612A TW 94136612 A TW94136612 A TW 94136612A TW 200633069 A TW200633069 A TW 200633069A
Authority
TW
Taiwan
Prior art keywords
heat treatment
carry
treatment device
vertical heat
carrying
Prior art date
Application number
TW094136612A
Other languages
English (en)
Other versions
TWI360183B (zh
Inventor
Kenjiro Haraki
Hiroyuki Yamamoto
Satoshi Uemura
Yuji Tsunoda
Yasushi Takeuchi
Hirofumi Sakai
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200633069A publication Critical patent/TW200633069A/zh
Application granted granted Critical
Publication of TWI360183B publication Critical patent/TWI360183B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting
TW094136612A 2004-10-19 2005-10-19 Vertical heat treatment device and application method thereof TW200633069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004303614A JP4266197B2 (ja) 2004-10-19 2004-10-19 縦型熱処理装置

Publications (2)

Publication Number Publication Date
TW200633069A true TW200633069A (en) 2006-09-16
TWI360183B TWI360183B (zh) 2012-03-11

Family

ID=36202925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094136612A TW200633069A (en) 2004-10-19 2005-10-19 Vertical heat treatment device and application method thereof

Country Status (7)

Country Link
US (1) US8177550B2 (zh)
EP (1) EP1811558A4 (zh)
JP (1) JP4266197B2 (zh)
KR (1) KR100780206B1 (zh)
CN (1) CN100403509C (zh)
TW (1) TW200633069A (zh)
WO (1) WO2006043509A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508217B (zh) * 2009-02-20 2015-11-11 Tokyo Electron Ltd 基板處理裝置

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JP4266197B2 (ja) * 2004-10-19 2009-05-20 東京エレクトロン株式会社 縦型熱処理装置
JP4313401B2 (ja) * 2007-04-24 2009-08-12 東京エレクトロン株式会社 縦型熱処理装置及び被処理基板移載方法
KR101077566B1 (ko) * 2008-08-20 2011-10-28 세메스 주식회사 기판 처리장치 및 이의 기판 이송 방법
US8882431B2 (en) * 2008-10-07 2014-11-11 Kawasaki Jukogyo Kabushiki Kaisha Substrate transfer robot and substrate transfer system
JP4720932B2 (ja) * 2009-02-10 2011-07-13 ムラテックオートメーション株式会社 移載装置
JP4973675B2 (ja) * 2009-02-26 2012-07-11 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2012054392A (ja) * 2010-09-01 2012-03-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP5625981B2 (ja) * 2011-02-10 2014-11-19 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US8888434B2 (en) 2011-09-05 2014-11-18 Dynamic Micro System Container storage add-on for bare workpiece stocker
TWI447059B (zh) * 2012-01-10 2014-08-01 Inotera Memories Inc 晶圓倉儲系統
JP5610009B2 (ja) * 2013-02-26 2014-10-22 東京エレクトロン株式会社 基板処理装置
JP2015141915A (ja) * 2014-01-27 2015-08-03 東京エレクトロン株式会社 基板熱処理装置、基板熱処理装置の設置方法
JP6211938B2 (ja) * 2014-01-27 2017-10-11 東京エレクトロン株式会社 基板熱処理装置、基板熱処理装置の設置方法
CN107851594B (zh) * 2015-08-28 2021-06-22 株式会社国际电气 基板处理装置以及半导体装置的制造方法
JP6704423B2 (ja) * 2018-01-17 2020-06-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JP7090513B2 (ja) * 2018-09-06 2022-06-24 東京エレクトロン株式会社 基板処理装置及びパージ方法
JP7412137B2 (ja) * 2019-11-06 2024-01-12 東京エレクトロン株式会社 基板処理装置及び基板収納容器保管方法
CN114435935A (zh) * 2020-11-04 2022-05-06 沈阳芯源微电子设备股份有限公司 一种片盒保管搬运设备
CN114435813A (zh) * 2020-11-04 2022-05-06 沈阳芯源微电子设备股份有限公司 一种片盒保管搬运系统
CN113086468B (zh) * 2021-03-26 2022-07-05 东方电气集团科学技术研究院有限公司 一种平行布置的恒温固化塔存取料方法

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KR100646906B1 (ko) * 1998-09-22 2006-11-17 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
US6481558B1 (en) * 1998-12-18 2002-11-19 Asyst Technologies, Inc. Integrated load port-conveyor transfer system
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KR20020019414A (ko) * 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
JP2003007800A (ja) * 2001-06-21 2003-01-10 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
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JP4184018B2 (ja) * 2002-09-25 2008-11-19 株式会社日立国際電気 半導体製造装置、半導体製造システムおよび半導体製造方法
JP4358077B2 (ja) * 2004-09-21 2009-11-04 株式会社東芝 成膜装置及び成膜方法
JP4266197B2 (ja) * 2004-10-19 2009-05-20 東京エレクトロン株式会社 縦型熱処理装置
JP4904995B2 (ja) * 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
US7740437B2 (en) * 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508217B (zh) * 2009-02-20 2015-11-11 Tokyo Electron Ltd 基板處理裝置

Also Published As

Publication number Publication date
EP1811558A1 (en) 2007-07-25
CN100403509C (zh) 2008-07-16
KR100780206B1 (ko) 2007-11-27
JP2006120658A (ja) 2006-05-11
WO2006043509A1 (ja) 2006-04-27
EP1811558A4 (en) 2008-09-10
US20090053665A1 (en) 2009-02-26
KR20070047732A (ko) 2007-05-07
TWI360183B (zh) 2012-03-11
JP4266197B2 (ja) 2009-05-20
CN1906748A (zh) 2007-01-31
US8177550B2 (en) 2012-05-15

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