TW200626481A - Method of selective etching using etch stop layer - Google Patents

Method of selective etching using etch stop layer

Info

Publication number
TW200626481A
TW200626481A TW094127155A TW94127155A TW200626481A TW 200626481 A TW200626481 A TW 200626481A TW 094127155 A TW094127155 A TW 094127155A TW 94127155 A TW94127155 A TW 94127155A TW 200626481 A TW200626481 A TW 200626481A
Authority
TW
Taiwan
Prior art keywords
layer
etch stop
stop layer
selective etching
mirror
Prior art date
Application number
TW094127155A
Other languages
English (en)
Inventor
Clarence Chui
Brian James Gally
Manish Kothari
Ming-Hau Tung
Original Assignee
Idc Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idc Llc filed Critical Idc Llc
Publication of TW200626481A publication Critical patent/TW200626481A/zh

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00793Avoid contamination, e.g. absorption of impurities or oxidation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/04Optical MEMS
    • B81B2201/042Micromirrors, not used as optical switches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128Processes for removing material
    • B81C2201/013Etching
    • B81C2201/0135Controlling etch progression
    • B81C2201/014Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094127155A 2004-09-27 2005-08-10 Method of selective etching using etch stop layer TW200626481A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61341004P 2004-09-27 2004-09-27
US11/090,773 US20060066932A1 (en) 2004-09-27 2005-03-25 Method of selective etching using etch stop layer

Publications (1)

Publication Number Publication Date
TW200626481A true TW200626481A (en) 2006-08-01

Family

ID=35462575

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094127155A TW200626481A (en) 2004-09-27 2005-08-10 Method of selective etching using etch stop layer

Country Status (11)

Country Link
US (1) US20060066932A1 (zh)
EP (1) EP1640768A1 (zh)
JP (1) JP2006091852A (zh)
KR (1) KR20060092871A (zh)
AU (1) AU2005203258A1 (zh)
BR (1) BRPI0503833A (zh)
CA (1) CA2514349A1 (zh)
MX (1) MXPA05009864A (zh)
RU (1) RU2005129861A (zh)
SG (1) SG121046A1 (zh)
TW (1) TW200626481A (zh)

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CN108264015A (zh) * 2016-12-30 2018-07-10 德克萨斯仪器股份有限公司 微机电系统(mems)元件的用于改善可靠性的介电包覆
CN110785374A (zh) * 2017-04-21 2020-02-11 弗劳恩霍夫应用研究促进协会 用于与流体的体积流相互作用的mems换能器及其制造方法

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Cited By (3)

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CN108264015A (zh) * 2016-12-30 2018-07-10 德克萨斯仪器股份有限公司 微机电系统(mems)元件的用于改善可靠性的介电包覆
CN108264015B (zh) * 2016-12-30 2024-01-23 德克萨斯仪器股份有限公司 微机电系统(mems)元件的用于改善可靠性的介电包覆
CN110785374A (zh) * 2017-04-21 2020-02-11 弗劳恩霍夫应用研究促进协会 用于与流体的体积流相互作用的mems换能器及其制造方法

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US20060066932A1 (en) 2006-03-30
KR20060092871A (ko) 2006-08-23
EP1640768A1 (en) 2006-03-29
AU2005203258A1 (en) 2006-04-13
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MXPA05009864A (es) 2006-03-29
JP2006091852A (ja) 2006-04-06

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