TW200619847A - Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition - Google Patents

Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition

Info

Publication number
TW200619847A
TW200619847A TW094131473A TW94131473A TW200619847A TW 200619847 A TW200619847 A TW 200619847A TW 094131473 A TW094131473 A TW 094131473A TW 94131473 A TW94131473 A TW 94131473A TW 200619847 A TW200619847 A TW 200619847A
Authority
TW
Taiwan
Prior art keywords
photosensitive composition
compound
pattern
forming method
photosensitive
Prior art date
Application number
TW094131473A
Other languages
English (en)
Other versions
TWI402623B (zh
Inventor
Kenji Wada
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of TW200619847A publication Critical patent/TW200619847A/zh
Application granted granted Critical
Publication of TWI402623B publication Critical patent/TWI402623B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
TW094131473A 2004-09-14 2005-09-13 感光性組成物、適用於感光性組成物之化合物、及使用感光性組成物之圖案形成方法 TWI402623B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004266722A JP4469692B2 (ja) 2004-09-14 2004-09-14 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法

Publications (2)

Publication Number Publication Date
TW200619847A true TW200619847A (en) 2006-06-16
TWI402623B TWI402623B (zh) 2013-07-21

Family

ID=35456021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094131473A TWI402623B (zh) 2004-09-14 2005-09-13 感光性組成物、適用於感光性組成物之化合物、及使用感光性組成物之圖案形成方法

Country Status (4)

Country Link
EP (1) EP1635218A3 (zh)
JP (1) JP4469692B2 (zh)
KR (1) KR100987093B1 (zh)
TW (1) TWI402623B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7960087B2 (en) * 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2007327983A (ja) * 2006-06-06 2007-12-20 Jsr Corp 感放射線性樹脂組成物
FR2903692B1 (fr) * 2006-07-17 2009-07-31 Inst Nat Polytech Grenoble Sulfonylimidures aromatiques et leur preparation.
JP5002393B2 (ja) * 2006-09-28 2012-08-15 富士フイルム株式会社 レジスト組成物およびこれを用いたパターン形成方法
EP1906248A1 (en) * 2006-09-28 2008-04-02 FUJIFILM Corporation Resist composition and pattern forming method using the same
US7718344B2 (en) * 2006-09-29 2010-05-18 Fujifilm Corporation Resist composition and pattern forming method using the same
US7851140B2 (en) 2007-06-12 2010-12-14 Fujifilm Corporation Resist composition for negative tone development and pattern forming method using the same
JP5162200B2 (ja) * 2007-10-10 2013-03-13 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5376847B2 (ja) * 2008-06-30 2013-12-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
US9023579B2 (en) 2009-07-10 2015-05-05 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition
JP5645459B2 (ja) 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
JP5629440B2 (ja) 2009-08-31 2014-11-19 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
JP2010159256A (ja) * 2010-01-18 2010-07-22 Fujifilm Corp 感光性組成物に有用な酸及びその塩
CN103250100A (zh) * 2010-12-01 2013-08-14 Jsr株式会社 放射线敏感树脂组合物、使用其的图案形成方法、聚合物及化合物
JP5723648B2 (ja) * 2011-03-25 2015-05-27 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP6658204B2 (ja) 2015-04-28 2020-03-04 信越化学工業株式会社 光酸発生剤、レジスト組成物及びパターン形成方法
JP6319188B2 (ja) 2015-05-27 2018-05-09 信越化学工業株式会社 スルホニウム塩、化学増幅レジスト組成物、及びパターン形成方法
JP6651965B2 (ja) 2016-04-14 2020-02-19 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
JP7056524B2 (ja) 2018-11-15 2022-04-19 信越化学工業株式会社 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2374934A (en) * 1940-02-23 1945-05-01 Hentrich Winfrid Process for preparing capillary active substances
BE756626A (fr) * 1969-09-26 1971-03-25 Merck & Co Inc Benzenesulfonamides
DE2150691C2 (de) 1971-10-12 1982-09-09 Basf Ag, 6700 Ludwigshafen Lichtempfindliches Gemisch und Verwendung eines lichtempfindlichen Gemisches zur Herstellung einer Flachdruckplatte
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US4039520A (en) * 1973-03-12 1977-08-02 Konishiroku Photo Industry Co., Ltd. Gelatin hardening process
DE2922746A1 (de) 1979-06-05 1980-12-11 Basf Ag Positiv arbeitendes schichtuebertragungsmaterial
US5073476A (en) 1983-05-18 1991-12-17 Ciba-Geigy Corporation Curable composition and the use thereof
JPS61226745A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS61226746A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS62153853A (ja) 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPH0616174B2 (ja) 1985-08-12 1994-03-02 三菱化成株式会社 ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物
JPS6269263A (ja) 1985-09-24 1987-03-30 Toshiba Corp 感光性組成物
DE3662188D1 (en) 1985-10-08 1989-04-06 Mitsui Petrochemical Ind Triphenol and polycarbonate polymer prepared therefrom
JPH083630B2 (ja) 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
JPS6326653A (ja) 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
JPS6334540A (ja) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPS63146029A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63146038A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
GB8630129D0 (en) 1986-12-17 1987-01-28 Ciba Geigy Ag Formation of image
CA1296925C (en) 1988-04-07 1992-03-10 Patrick Bermingham Test system for caissons and piles
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
US4916210A (en) 1988-10-20 1990-04-10 Shell Oil Company Resin from alpha, alpha', alpha"-tris(4-cyanatophenyl)-1,3,5-triisopropylbenzene
DE3914407A1 (de) 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JP2717602B2 (ja) 1990-01-16 1998-02-18 富士写真フイルム株式会社 感光性組成物
JPH03223860A (ja) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd 新規レジスト材料
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP2711590B2 (ja) 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US5576143A (en) 1991-12-03 1996-11-19 Fuji Photo Film Co., Ltd. Light-sensitive composition
JP2753921B2 (ja) 1992-06-04 1998-05-20 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP3112229B2 (ja) 1993-06-30 2000-11-27 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3224115B2 (ja) 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0691575B1 (en) 1994-07-04 2002-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JPH0862834A (ja) 1994-08-22 1996-03-08 Mitsubishi Chem Corp フォトレジスト組成物
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
JPH095988A (ja) 1995-06-21 1997-01-10 Mitsubishi Chem Corp 感放射線性塗布組成物
JP3562599B2 (ja) 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
DE19733948A1 (de) * 1997-08-06 1999-02-11 Merck Patent Gmbh Verfahren zur Herstellung von Perfluoralkan-1-sulfonyl(perfluoralkylsulfonyl) imid-N-sulfonyl enthaltende Methanide, Imide und Sulfonate, und Perfluoralkan-1-N-(sulfonylbis(perfluoralkylsulfonyl)methaniden)
JP2000063689A (ja) * 1998-08-26 2000-02-29 Fuji Photo Film Co Ltd 新規化合物及び該化合物を含有するハロゲン化銀写真感光材料
JP2001302721A (ja) * 2000-04-24 2001-10-31 Toyota Central Res & Dev Lab Inc 高プロトン伝導性電解質
JP2002090991A (ja) 2000-09-13 2002-03-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2002116518A (ja) * 2000-10-05 2002-04-19 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料
US6777160B2 (en) * 2001-03-12 2004-08-17 Fuji Photo Film Co., Ltd. Positive-working resist composition
JP4102032B2 (ja) 2001-03-12 2008-06-18 富士フイルム株式会社 ポジ型レジスト組成物
JP2002277862A (ja) 2001-03-21 2002-09-25 Nippon Hoso Kyokai <Nhk> 液晶光変調器及びそれを用いた表示装置
JP4225046B2 (ja) 2001-12-13 2009-02-18 住友化学株式会社 エネルギー活性なスルホニウム塩及びその用途
JP4351440B2 (ja) 2001-12-18 2009-10-28 東洋化成工業株式会社 新規なスルホニウム塩化合物、その製造方法およびその用途
JP4199958B2 (ja) 2002-06-03 2008-12-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4265286B2 (ja) 2002-06-03 2009-05-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4016854B2 (ja) 2003-03-04 2007-12-05 株式会社デンソー 演算増幅回路を有する半導体装置
JP4448730B2 (ja) * 2004-04-20 2010-04-14 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法

Also Published As

Publication number Publication date
TWI402623B (zh) 2013-07-21
JP4469692B2 (ja) 2010-05-26
KR20060051302A (ko) 2006-05-19
EP1635218A3 (en) 2007-03-21
EP1635218A2 (en) 2006-03-15
KR100987093B1 (ko) 2010-10-11
JP2006084530A (ja) 2006-03-30

Similar Documents

Publication Publication Date Title
TW200619847A (en) Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition
TW200700904A (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
TWI369580B (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
NO20053170D0 (no) Fremgangsmate for a forhindre gjenbruk i et analyttmalesystem.
EP1737944A4 (en) METHOD FOR GENERATING INSULIN-PRODUCING CELLS
EP2192134A4 (en) PHOTOSENSITIVE COMPOSITION, PATTERN FORMATION METHOD EMPLOYING THE PHOTOSENSITIVE COMPOSITION, AND COMPOUND USED IN THE PHOTOSENSITIVE COMPOSITION
HRP20070374T3 (en) Formulations comprising ecteinascidin and a disaccharide
EP1782263A4 (en) PRODUCTION OF SWPM-MDT WORKFLOW
EP1797967A4 (en) ORGANIC THIN FILM PROCESSING, ORGANIC THIN FILM TRAINING AND SOLUTION FOR ORGANIC THIN FILM EDUCATION
TW200641536A (en) Positive resist composition and pattern-forming method using the same
DE602004021120D1 (de) Photopolymerisierbare zusammensetzung.
IS7837A (is) Vetni framleitt með vatnsafli
EP1850484A4 (en) EASY MATRIX BASED ON IRREGULAR LDCP, CODEC AND PRODUCTION METHOD THEREFOR
TW200601745A (en) Method to manage medium access for a mixed wireless network
TW200617019A (en) A process for the preparation of 7α-alkylated 19-norsteroids
NO20052613D0 (no) Fremgangsmate, system og anordning for a tilby arbeidsbokomrader som datakilder
GB2426612C (en) Method and apparatus for generating configuration.
EP1811056A4 (en) METHOD OF FORMING A FILM, AND FILM
TW200705096A (en) Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition
EP1836592A4 (en) USE OF ASSOCIATED BASIS OF KNOWLEDGE TO PROVIDE ADDITIONAL INFORMATION IN THE POSTAL TRANSMISSION PROCESS
ZA200408738B (en) Organic compounds.
EP1737045A4 (en) SUBSTRATE WITH THIN ORGANIC FILM, TRANSISTOR USING THE SAME, AND METHODS OF MAKING SAME
TW200506539A (en) Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate
GEP20074075B (en) Indazolamides with analgesic activity
HK1067926A2 (en) An electrochemical dye reducing method.

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees