TW200614361A - Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method - Google Patents

Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method

Info

Publication number
TW200614361A
TW200614361A TW094127256A TW94127256A TW200614361A TW 200614361 A TW200614361 A TW 200614361A TW 094127256 A TW094127256 A TW 094127256A TW 94127256 A TW94127256 A TW 94127256A TW 200614361 A TW200614361 A TW 200614361A
Authority
TW
Taiwan
Prior art keywords
hydroxylamine
micro
structures
manufacturing
agent composition
Prior art date
Application number
TW094127256A
Other languages
English (en)
Other versions
TWI430353B (zh
Inventor
Kenji Yamada
Tomoyuki Azuma
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200614361A publication Critical patent/TW200614361A/zh
Application granted granted Critical
Publication of TWI430353B publication Critical patent/TWI430353B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
TW94127256A 2004-08-13 2005-08-11 用於製造矽之微結構之各向異性蝕刻劑組成物及蝕刻方法 TWI430353B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004235871A JP3994992B2 (ja) 2004-08-13 2004-08-13 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法

Publications (2)

Publication Number Publication Date
TW200614361A true TW200614361A (en) 2006-05-01
TWI430353B TWI430353B (zh) 2014-03-11

Family

ID=35207902

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94127256A TWI430353B (zh) 2004-08-13 2005-08-11 用於製造矽之微結構之各向異性蝕刻劑組成物及蝕刻方法

Country Status (3)

Country Link
EP (1) EP1626438B1 (zh)
JP (1) JP3994992B2 (zh)
TW (1) TWI430353B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4684869B2 (ja) * 2004-11-30 2011-05-18 株式会社トクヤマ シリコンエッチング液
JP2006351812A (ja) * 2005-06-15 2006-12-28 Mitsubishi Gas Chem Co Inc シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
JP2006351811A (ja) * 2005-06-15 2006-12-28 Mitsubishi Gas Chem Co Inc シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法。
JP5302551B2 (ja) * 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
JP2010034178A (ja) * 2008-07-28 2010-02-12 Mitsubishi Gas Chemical Co Inc シリコンエッチング液およびエッチング方法
WO2011040484A1 (ja) 2009-10-02 2011-04-07 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法
WO2012035888A1 (ja) 2010-09-17 2012-03-22 三菱瓦斯化学株式会社 シリコンエッチング液及びそれを用いたトランジスタの製造方法
JP5869368B2 (ja) * 2011-03-04 2016-02-24 富士フイルム株式会社 キャパシタ構造の形成方法及びこれに用いられるシリコンエッチング液
JP2015008167A (ja) * 2011-10-28 2015-01-15 三菱電機株式会社 シリコン基板のエッチング方法およびシリコン基板のエッチング液
JP5439466B2 (ja) 2011-12-26 2014-03-12 富士フイルム株式会社 シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
KR101554190B1 (ko) 2011-12-27 2015-09-18 후지필름 가부시키가이샤 반도체 기판 제품의 제조방법 및 이것에 이용되는 에칭방법
JP5674832B2 (ja) 2012-01-25 2015-02-25 富士フイルム株式会社 キャパシタ形成方法、半導体基板製品の製造方法、およびエッチング液
WO2014112430A1 (ja) 2013-01-15 2014-07-24 三菱瓦斯化学株式会社 シリコンエッチング液およびエッチング方法並びに微小電気機械素子
JP2015088711A (ja) * 2013-11-01 2015-05-07 日本酢ビ・ポバール株式会社 テクスチャエッチング液、テクスチャエッチング液用添加剤液、テクスチャ形成基板及びテクスチャ形成基板の製造方法並びに太陽電池
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
KR102545802B1 (ko) * 2015-12-04 2023-06-21 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
JP7064905B2 (ja) * 2018-03-05 2022-05-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN113243041A (zh) 2018-12-18 2021-08-10 株式会社德山 硅蚀刻液
US11168253B2 (en) 2019-01-08 2021-11-09 Samsung Electronics Co., Ltd. Silicon layer etchant composition and method of forming pattern by using the same
WO2022172907A1 (ja) 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法
KR20240076737A (ko) 2022-11-22 2024-05-30 가부시키가이샤 도쿠야마 실리콘 에칭액, 기판의 처리 방법 및 실리콘 디바이스의 제조 방법

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US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5804090A (en) * 1995-03-20 1998-09-08 Nissan Motor Co., Ltd. Process for etching semiconductors using a hydrazine and metal hydroxide-containing etching solution
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
JP3525612B2 (ja) * 1996-03-12 2004-05-10 セイコーエプソン株式会社 シリコンウェハーの加工方法及びそのシリコンウェハーを用いた電子機器
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
FR2819201B1 (fr) * 2001-01-09 2003-02-21 Atofina Procede de nettoyage d'une surface solide par elimination de salissures organiques et/ou minerales au moyen d'une microemulsion
JP3781106B2 (ja) * 2001-09-20 2006-05-31 タク・マテリアル株式会社 太陽電池用シリコン基板の製造方法
WO2003064581A1 (en) * 2002-01-28 2003-08-07 Ekc Technology, Inc. Methods and compositions for chemically treating a substrate using foam technology
JP3975861B2 (ja) * 2002-08-26 2007-09-12 富士電機デバイステクノロジー株式会社 メサ型半導体装置の製造方法
JP3970145B2 (ja) * 2002-09-26 2007-09-05 株式会社豊田中央研究所 シリコン異方性エッチング液及びそれを用いた半導体装置の製造方法
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging

Also Published As

Publication number Publication date
EP1626438A2 (en) 2006-02-15
JP2006054363A (ja) 2006-02-23
JP3994992B2 (ja) 2007-10-24
EP1626438B1 (en) 2013-03-20
EP1626438A3 (en) 2007-07-04
TWI430353B (zh) 2014-03-11

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