WO2015180555A1 - 基于mems的传感器的制作方法 - Google Patents

基于mems的传感器的制作方法 Download PDF

Info

Publication number
WO2015180555A1
WO2015180555A1 PCT/CN2015/078245 CN2015078245W WO2015180555A1 WO 2015180555 A1 WO2015180555 A1 WO 2015180555A1 CN 2015078245 W CN2015078245 W CN 2015078245W WO 2015180555 A1 WO2015180555 A1 WO 2015180555A1
Authority
WO
WIPO (PCT)
Prior art keywords
epitaxial layer
substrate
forming
shallow
support beam
Prior art date
Application number
PCT/CN2015/078245
Other languages
English (en)
French (fr)
Inventor
胡永刚
周国平
Original Assignee
无锡华润上华半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 无锡华润上华半导体有限公司 filed Critical 无锡华润上华半导体有限公司
Priority to EP15800029.9A priority Critical patent/EP3150548B1/en
Priority to US15/312,146 priority patent/US9975766B2/en
Priority to JP2017500124A priority patent/JP6333464B2/ja
Publication of WO2015180555A1 publication Critical patent/WO2015180555A1/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00619—Forming high aspect ratio structures having deep steep walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0142—Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014

Definitions

  • the present invention relates to the field of semiconductor device technologies, and in particular, to a method for fabricating a MEMS-based sensor.
  • MEMS Micro Electro Mechanical Systems, Microelectromechanical Systems
  • MEMS Technology development using MEMS Technically produced sensors, such as pressure sensors, have been widely used in the consumer electronics field.
  • the manufacture of the MEMS pressure sensor requires the manufacture of a support beam.
  • the support beam structure of the conventional MEMS pressure sensor connected to the mass is formed when a deep groove is formed in the back corrosion process, and the support beam is about 350 ⁇ m high.
  • a method for fabricating a MEMS-based sensor includes the steps of:
  • a substrate is provided.
  • Shallow grooves and support beams are formed on the front side of the substrate.
  • a first epitaxial layer is formed on a front side of the substrate to cap the shallow trench.
  • a suspended grid-like structure is formed under the first epitaxial layer.
  • a second epitaxial layer is formed on the first epitaxial layer.
  • a circuit layer is formed on the second epitaxial layer.
  • a deep groove is formed at a position of the back surface of the substrate corresponding to the shallow groove, and the shallow groove and the deep groove are communicated.
  • the support beam is removed.
  • the above MEMS-based sensor manufacturing method can simultaneously form a supporting beam supporting the mass by forming a shallow groove on the front surface, and the etching shallow groove is easier to control and the process precision is higher than the etching deep groove, so that the formation is performed.
  • the support beam has better consistency and uniformity than the conventional support beam formed when the deep groove is formed on the back side.
  • FIG. 1 is a flow chart of a method of fabricating a sensor of a MEMS according to an embodiment
  • Figure 2 is a plan view of a substrate of an embodiment
  • Figure 3 is a side cross-sectional view taken along line A-A' of Figure 2;
  • FIG. 4 is a schematic view of a first epitaxial layer of an embodiment
  • Figure 5 is a schematic view showing a grid structure of an embodiment
  • Figure 6 is a schematic illustration of a second epitaxial layer of an embodiment
  • Figure 7 is a schematic illustration of a circuit layer of an embodiment
  • Figure 8 is a schematic illustration of a deep trench of an embodiment.
  • FIG. 1 is a flow chart of a method for fabricating a sensor of a MEMS according to an embodiment. Please refer to FIG. 2 to FIG. 8. In this embodiment, the method is applied to a pressure sensor.
  • a method for fabricating a MEMS pressure sensor comprising:
  • Step S100 Providing a substrate 100.
  • the substrate 100 is a semiconductor material such as silicon in this embodiment.
  • Step S110 As shown in FIG. 2 and FIG. 3, four shallow trenches 120 having a depth of 50 ⁇ m to 100 ⁇ m are formed on the front surface of the substrate 100 by an etching process, and four support beams 140 are interposed between the four shallow trenches 120.
  • the shallow trench 120 divides the upper layer of the substrate 100 into inner and outer sheets, and the inner sheet is rectangular. On the four sides of the inner piece There is a bonding point between the inner piece and the outer piece, and the bonding point is the supporting beam 140.
  • the shallow groove 120 is preferably 70 ⁇ m deep.
  • the support beams 140 are four.
  • the support beam 140 is not limited to four, and only a pair of support beams, or other numbers of support beams 140, may be present on only one side of the inner sheet.
  • Step S120 As shown in FIG. 4, a first epitaxial layer 200 having a thickness of 5 ⁇ m to 10 ⁇ m is formed on the front surface of the substrate 100, and the first epitaxial layer 200 covers the shallow trench 120.
  • the first epitaxial layer 200 may be formed by a process such as vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy or chemical molecular beam epitaxy, or a bonding and thinning process.
  • Step S130 As shown in FIG. 5, the deep hole 220 is formed in the first epitaxial layer 200 by an etching process, and then a suspended grid is formed between the first epitaxial layer 200 and the substrate 100 by an anisotropic and isotropic process. Structure 160.
  • the grid-like structures 160 are in communication with the deep holes 220 and the shallow grooves 120, respectively.
  • the grid-like structure 160 is mainly present in the substrate 100 under the first epitaxial layer 200, that is, in the inner sheet of the substrate 100.
  • Step S140 As shown in FIG. 6, a second epitaxial layer 300 (ie, a piezoresistive film) having a thickness of 12 ⁇ m to 20 ⁇ m is formed on the first epitaxial layer 200, and the second epitaxial layer 300 covers the deep hole 220 and the mesh structure 160.
  • the second epitaxial layer 300 may be formed by a process such as vapor phase epitaxy, liquid phase epitaxy, molecular beam epitaxy or chemical molecular beam epitaxy, or a bonding and thinning process.
  • Step S150 As shown in FIG. 7, a desired circuit structure, that is, a circuit layer 320 is formed on the second epitaxial layer 300 by a semiconductor process such as photolithography, implantation, diffusion, etching, or the like.
  • Step S160 As shown in FIG. 8, a deep trench 180 having a depth of 300 ⁇ m to 400 ⁇ m is formed by a photolithography and etching process at a position corresponding to the shallow trench 120 on the back surface of the substrate 100, and the shallow trench 120 and the deep trench 180 are connected.
  • the deep trench 180 also divides the lower layer of the substrate 100 into inner and outer sheets, the inner sheet being rectangular but the four sides are not bonded to the outer sheet, so that there is only a shallow groove 120 between the mass 400 and the substrate 100.
  • the deep trench 180 is preferably 350 ⁇ m deep.
  • Step S170 Finally, the circuit layer 320 is coated with glue, and then the support beam 140 structure is etched away from the back surface of the substrate 100 by the potassium hydroxide solution etching, the mass 400 is peeled off, and the second epitaxial layer 300 (the piezoresistive film) ) Corrosion to the required thickness.
  • the etched shallow trench 120 is easier to control and has higher process precision than the etched deep trench 180, so that the formed support beam 140 is more consistent and uniform than the conventional support beam formed when the deep trench 180 is formed on the back surface.
  • the mass 400 has the same falling time, so the consistency of the thickness of the piezoresistive film is good, the consistency of the pressure sensor is good, and the parameters are stable.
  • the above method adopts the fabrication of the support beam structure, and only needs to precisely control the etching of the shallow groove 120, which saves the process time and the etching raw materials, can effectively improve the utilization rate of the equipment, increase the output and can reduce the production cost.
  • steps in the flowchart of FIG. 1 are sequentially displayed as indicated by the arrows, these steps are not necessarily performed in the order indicated by the arrows. Except as explicitly stated herein, the execution of these steps is not strictly limited, and may be performed in other sequences. Moreover, at least some of the steps in FIG. 1 may include a plurality of sub-steps or stages, which are not necessarily performed at the same time, but may be executed at different times, and the order of execution thereof is not necessarily This may be performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of the other steps.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

一种基于MEMS的传感器的制作方法，包括步骤：在衬底（100）的正面形成浅槽（120）和支撑梁（140）；在衬底（100）的正面形成第一外延层（200）以将浅槽（120）封盖；在第一外延层（200）下形成悬空的网格状结构（160）；在衬底（100）的背面对应浅槽（120）的位置形成深槽（180），使浅槽（120）和深槽（180）连通。基于MEMS的传感器的制作方法在正面形成浅槽时同时形成质量块的支撑梁，使得槽的刻蚀更易控制、工艺更精准，形成的支撑梁一致性和均匀性更好。

Description

基于MEMS的传感器的制作方法
【技术领域】
本发明涉及半导体器件技术领域，特别涉及一种基于MEMS的传感器的制作方法。
【背景技术】
MEMS（Micro Electro Mechanical Systems，微电子机械系统）是利用集成电路制造技术和微加工技术把微结构、微传感器、微执行器、控制处理电路甚至接口、通信和电源等制造在一块或多块芯片上的微型集成系统。随着MEMS 技术的发展，利用MEMS 技术制作传感器，如压力传感器已广泛用于消费电子领域。制造MEMS压力传感器需要制造支撑梁，传统MEMS压力传感器连接质量块的支撑梁结构是在背面腐蚀过程中形成深槽时候形成的，支撑梁高350μm左右。在刻蚀槽的过程中很难控制支撑梁宽度的均匀性和一致性，这就导致在后续KOH腐蚀过程中，质量块脱落时间不一致，导致压阻膜腐蚀时间不同，厚度不一致，进而导致压力传感器器件参数一致性差。而为了控制保证支撑梁结构的均匀性和一致性，则需要非常精确的控制深槽腐蚀的过程，这样就降低了生产效率，不利于生产成本的降低。传统工艺存在支撑梁宽度和高度一致性和均匀性较差的问题。
【发明内容】
基于此，有必要提供一种提高支撑梁一致性和均匀性的基于MEMS的传感器的制作方法。
一种基于MEMS的传感器的制作方法，包括步骤：
提供衬底。
在所述衬底的正面形成浅槽和支撑梁。
在所述衬底的正面形成第一外延层以将所述浅槽封盖。
在所述第一外延层下形成悬空的网格状结构。
在所述第一外延层上形成第二外延层。
在所述第二外延层上形成电路层。
在所述衬底的背面对应所述浅槽的位置形成深槽，使所述浅槽和所述深槽连通。
将所述支撑梁除去。
上述基于MEMS的传感器的制作方法，通过在正面形成浅槽时就同时形成支撑质量块的支撑梁，由于刻蚀浅槽相较于刻蚀深槽更容易控制、工艺精准度更高，使得形成的支撑梁相较于传统的在背面形成深槽时形成的支撑梁一致性和均匀性更好。
【附图说明】
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。
图1是一实施例的MEMS的传感器的制作方法的流程图；
图2是一实施例的衬底俯视图；
图3是沿图2中A-A’线的侧面剖视图；
图4是一实施例的第一外延层的示意图；
图5是一实施例网格状结构示意图；
图6是一实施例的第二外延层的示意图；
图7是一实施例的电路层的示意图；
图8是一实施例的深槽的示意图。
【具体实施方式】
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及／或”包括一个或多个相关的所列项目的任意的和所有的组合。
下面结合附图，对本发明的具体实施方式进行详细描述。
图1为一个实施例的MEMS的传感器的制作方法的流程图，请结合图2至图8。在本实施例中，该方法应用于压力传感器。
一种MEMS压力传感器的制作方法，包括：
步骤S100：提供衬底100。衬底100在本实施例中为半导体材料，例如硅。
步骤S110：见图2和图3，在衬底100的正面通过刻蚀工艺形成四条深50μm~100μm浅槽120，四条浅槽120之间间隔着四条支撑梁140。浅槽120将衬底100上层划分为内片和外片，内片为矩形。在内片的四边上 ，内片和外片之间有粘结点，粘结点即为支撑梁140。浅槽120优选为深70μm。在本实施例中，支撑梁140为四条。当然在其他实施例中，支撑梁140不限于四条，也可以只在内片的某一对边上存在一对支撑梁，或者其他数量的支撑梁140。
步骤S120：见图4，在衬底100的正面形成厚5μm~10μm的第一外延层200，第一外延层200将浅槽120封盖。形成第一外延层200可以采用气相外延、液相外延、分子束外延或化学分子束外延等工艺，也可采用键合再减薄的工艺。
步骤S130：见图5，在第一外延层200通过刻蚀工艺形成深孔220，然后在第一外延层200和衬底100之间通过各向异性和各项同性工艺形成悬空的网格状结构160。网格状结构160分别与深孔220及浅槽120相连通。网格状结构160主要存在于第一外延层200下的衬底100中，即衬底100的内片中。
步骤S140：见图6，在第一外延层200上形成厚12μm~20μm的第二外延层300（即压阻膜），第二外延层300将深孔220和网格状结构160封盖。形成第二外延层300可以采用气相外延、液相外延、分子束外延或化学分子束外延等工艺，也可采用键合再减薄的工艺。
步骤S150：见图7，在第二外延层300上通过光刻、注入、扩散、腐蚀等半导体工艺形成所需的电路结构，即电路层320。
步骤S160：见图8，在衬底100的背面对应浅槽120的位置通过光刻、腐蚀工艺形成深300μm~400μm的深槽180，并使浅槽120和深槽180连通。深槽180将衬底100下层也划分为内片和外片，内片为矩形但四边并没有和外片连接的粘结点，从而使得质量块400和衬底100之间仅有浅槽120那里的四条支撑梁140连接。深槽180优选为深350μm。
步骤S170：最后，在电路层320上涂胶，然后从衬底100背面通过氢氧化钾溶液腐蚀将支撑梁140结构腐蚀掉，使质量块400脱落，并将第二外延层300（压阻膜）腐蚀到所需厚度。刻蚀浅槽120相较于刻蚀深槽180更容易控制、工艺精准度更高，使得形成的支撑梁140相较于传统的在背面形成深槽180时形成的支撑梁一致性和均匀性更好，所以在做氢氧化钾溶液腐蚀时，质量块400脱落时间相同，所以压阻膜厚度的一致性好，压力传感器的一致性好、参数稳定。上述方法采用制作支撑梁结构，只需要精确控制浅槽120的刻蚀即可，节约了工艺时间和刻蚀原料，可以有效的提高设备利用率，增加产出并且可以降低生产成本。
应该理解的是，虽然图1的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，其可以以其他的顺序执行。而且，图1中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，其执行顺序也不必然是依次进行，而是可以与其他步骤或者其他步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。
可以理解，上述MEMS压力传感器的制作方法，仅描述一些主要步骤，并不代表MEMS压力传感器的制作方法的所有步骤。图2~图8中的图示也是对制作MEMS压力传感器的过程中器件的一些主要结构的简单示例，并不代表器件的全部结构。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种基于MEMS的传感器的制作方法，其特征在于，包括步骤：
    提供衬底；
    在所述衬底的正面形成浅槽和支撑梁；
    在所述衬底的正面形成第一外延层以将所述浅槽封盖；
    在所述第一外延层下形成悬空的网格状结构；
    在所述第一外延层上形成第二外延层；
    在所述第二外延层上形成电路层；
    在所述衬底的背面对应所述浅槽的位置形成深槽，使所述浅槽和所述深槽连通；及
    将所述支撑梁除去。
  2. 根据权利要求1所述的方法，其特征在于，在所述衬底的正面形成浅槽和支撑梁是通过刻蚀工艺实现。
  3. 根据权利要求1所述的方法，其特征在于，所述浅槽深50μm~100μm。
  4. 根据权利要求1所述的方法，其特征在于，所述第一外延层厚5μm~10μm。
  5. 根据权利要求1所述的方法，其特征在于，所述第二外延层厚12μm~20μm。
  6. 根据权利要求1所述的方法，其特征在于，在所述第二外延层上形成电路层的工艺包括光刻、注入、扩散、腐蚀。
  7. 根据权利要求1所述的方法，其特征在于，在所述衬底的背面对应所述浅槽的位置形成深槽是通过刻蚀工艺实现。
  8. 根据权利要求1 所述的方法，其特征在于，所述深槽深300μm~400μm。
  9. 根据权利要求1 所述的方法，其特征在于，将所述支撑梁除去是通过从所述衬底的背面对所述支撑梁实施腐蚀工艺实现。
  10. 根据权利要求1所述的方法，其特征在于，所述支撑梁的数目为四条。
PCT/CN2015/078245 2014-05-28 2015-05-05 基于mems的传感器的制作方法 WO2015180555A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP15800029.9A EP3150548B1 (en) 2014-05-28 2015-05-05 Mems-based method for manufacturing sensor
US15/312,146 US9975766B2 (en) 2014-05-28 2015-05-05 MEMS-based method for manufacturing sensor
JP2017500124A JP6333464B2 (ja) 2014-05-28 2015-05-05 Ｍｅｍｓに基づいたセンサーの製作方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410231976.XA CN105174203B (zh) 2014-05-28 2014-05-28 基于mems的传感器的制作方法
CN201410231976.X 2014-05-28

Publications (1)

Publication Number Publication Date
WO2015180555A1 true WO2015180555A1 (zh) 2015-12-03

Family

ID=54698060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/078245 WO2015180555A1 (zh) 2014-05-28 2015-05-05 基于mems的传感器的制作方法

Country Status (5)

Country Link
US (1) US9975766B2 (zh)
EP (1) EP3150548B1 (zh)
JP (1) JP6333464B2 (zh)
CN (1) CN105174203B (zh)
WO (1) WO2015180555A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106483758B (zh) 2015-09-02 2019-08-20 无锡华润上华科技有限公司 光学邻近效应修正方法和系统
CN106653842B (zh) 2015-10-28 2019-05-17 无锡华润上华科技有限公司 一种具有静电释放保护结构的半导体器件
CN106816468B (zh) 2015-11-30 2020-07-10 无锡华润上华科技有限公司 具有resurf结构的横向扩散金属氧化物半导体场效应管
CN107465983B (zh) 2016-06-03 2021-06-04 无锡华润上华科技有限公司 Mems麦克风及其制备方法
CN110002395A (zh) * 2019-04-10 2019-07-12 北京盛通恒瑞科贸有限公司 一种压阻式双轴运动传感器及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010033670A1 (en) * 1996-04-18 2001-10-25 California Institute Of Technology A California Institute Of Technology Thin film electret microphone
JP2003251598A (ja) * 2002-02-28 2003-09-09 Rep Korea 基板貫通エッチング方法
CN101066749A (zh) * 2007-06-12 2007-11-07 中国科学院上海微系统与信息技术研究所 一种悬臂梁结构、制作方法及应用
WO2010060684A2 (de) * 2008-11-28 2010-06-03 Robert Bosch Gmbh Verfahren zur herstellung eines mikromechanischen bauelements sowie mit dem verfahren hergestelltes bauelement bzw. dessen verwendung
CN102190284A (zh) * 2010-03-11 2011-09-21 苏州敏芯微电子技术有限公司 Mems传感器及制造方法及薄膜、质量块与悬臂梁的制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI119729B (fi) * 2005-11-23 2009-02-27 Vti Technologies Oy Menetelmä mikroelektromekaanisen komponentin valmistamiseksi ja mikroelektromekaaninen komponentti
JP5344360B2 (ja) * 2006-01-24 2013-11-20 セイコーエプソン株式会社 薄膜回路装置、電子機器及び製造方法
DE102007002273A1 (de) * 2007-01-16 2008-07-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Bauteils und Sensorelement
FR2932923B1 (fr) * 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.
TWI392405B (zh) * 2009-10-26 2013-04-01 Unimicron Technology Corp 線路結構
US7998776B1 (en) * 2010-06-10 2011-08-16 Memsensing Microsystems Technology Co., Ltd. Methods for manufacturing MEMS sensor and thin film thereof with improved etching process
CN102200667B (zh) * 2011-05-06 2013-08-21 中国科学院上海微系统与信息技术研究所 一种体硅可调谐光学滤波器及制作方法
CN103297907A (zh) * 2012-02-23 2013-09-11 苏州敏芯微电子技术有限公司 电容式微型硅麦克风及其制备方法
US10160632B2 (en) * 2012-08-21 2018-12-25 Robert Bosch Gmbh System and method for forming a buried lower electrode in conjunction with an encapsulated MEMS device
US8735199B2 (en) * 2012-08-22 2014-05-27 Honeywell International Inc. Methods for fabricating MEMS structures by etching sacrificial features embedded in glass
CN103681233B (zh) * 2012-09-05 2016-06-15 无锡华润上华半导体有限公司 一种多沟槽结构的制作方法
JP2014086467A (ja) * 2012-10-19 2014-05-12 Tohoku Univ 半導体装置の製造方法及び半導体装置
US10497776B2 (en) * 2013-06-19 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Narrow gap device with parallel releasing structure
CN103557967B (zh) * 2013-11-22 2015-06-10 中国电子科技集团公司第四十九研究所 一种硅微谐振式压力传感器芯体及制作方法
US9428381B2 (en) * 2014-03-03 2016-08-30 Infineon Technologies Ag Devices with thinned wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010033670A1 (en) * 1996-04-18 2001-10-25 California Institute Of Technology A California Institute Of Technology Thin film electret microphone
JP2003251598A (ja) * 2002-02-28 2003-09-09 Rep Korea 基板貫通エッチング方法
CN101066749A (zh) * 2007-06-12 2007-11-07 中国科学院上海微系统与信息技术研究所 一种悬臂梁结构、制作方法及应用
WO2010060684A2 (de) * 2008-11-28 2010-06-03 Robert Bosch Gmbh Verfahren zur herstellung eines mikromechanischen bauelements sowie mit dem verfahren hergestelltes bauelement bzw. dessen verwendung
CN102190284A (zh) * 2010-03-11 2011-09-21 苏州敏芯微电子技术有限公司 Mems传感器及制造方法及薄膜、质量块与悬臂梁的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3150548A4 *

Also Published As

Publication number Publication date
EP3150548A4 (en) 2018-01-03
EP3150548A1 (en) 2017-04-05
US9975766B2 (en) 2018-05-22
CN105174203B (zh) 2016-09-28
JP6333464B2 (ja) 2018-05-30
JP2017516676A (ja) 2017-06-22
EP3150548B1 (en) 2018-12-19
US20170073224A1 (en) 2017-03-16
CN105174203A (zh) 2015-12-23

Similar Documents

Publication Publication Date Title
WO2015180555A1 (zh) 基于mems的传感器的制作方法
Pal et al. Fabrication methods based on wet etching process for the realization of silicon MEMS structures with new shapes
de Boer et al. Micromachining of buried micro channels in silicon
US6743654B2 (en) Method of fabricating pressure sensor monolithically integrated
JP6525163B2 (ja) マイクロチャネル壁と同じ面高さの電極を有するマイクロ流体チップの作製方法
JP2003039395A5 (zh)
WO2020224513A1 (zh) 微机电系统器件制备方法
Su et al. A review: crystalline silicon membranes over sealed cavities for pressure sensors by using silicon migration technology
EP1880977A2 (en) Silicon on metal for MEMS devices
CN112758888A (zh) 一种带有硅通孔的硅mems微结构的加工工艺
TWI277600B (en) Single wafer fabrication of integrated micro-fluidic system
CN103395736B (zh) Mems玻璃浆料键合结构及其制造方法
CN107265394B (zh) 一种悬空微结构的正面释放技术
KR20020016117A (ko) Ｍｅｍｓ 공정을 이용한 마이크로폰 제작방법
CN102817082B (zh) 一种硅膜的制备方法
CN209721578U (zh) 一种压阻式双轴运动传感器
CN102701142B (zh) 圆片集成微透镜光学系统制作方法及该器件结构
WO2015176606A1 (zh) Mems质量块的制作方法
CN104045055A (zh) 盖板的制作方法
Zhao et al. Sacrificial grid release technology: a versatile release concept for MEMS structures
CN110002395A (zh) 一种压阻式双轴运动传感器及其制作方法
US7534641B2 (en) Method for manufacturing a micro-electro-mechanical device
CN101172572A (zh) 制作可平衡气体压力的流道的方法
CN110240112B (zh) 薄膜驱动结构、薄膜驱动结构的制造方法及喷墨装置
Pal et al. Silicon microfluidic channels and microstructures in single photolithography step

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15800029

Country of ref document: EP

Kind code of ref document: A1

REEP Request for entry into the european phase

Ref document number: 2015800029

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2015800029

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2017500124

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 15312146

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE