JP2017516676A - Memsに基づいたセンサーの製作方法 - Google Patents
Memsに基づいたセンサーの製作方法 Download PDFInfo
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- JP2017516676A JP2017516676A JP2017500124A JP2017500124A JP2017516676A JP 2017516676 A JP2017516676 A JP 2017516676A JP 2017500124 A JP2017500124 A JP 2017500124A JP 2017500124 A JP2017500124 A JP 2017500124A JP 2017516676 A JP2017516676 A JP 2017516676A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000007667 floating Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00619—Forming high aspect ratio structures having deep steep walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/0142—Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
Abstract
Description
基材を提供するステップと、
前記基材の正面に浅い槽と支持梁を形成するステップと、
前記基材の正面に第一延伸層を形成することにより前記浅い槽を覆うステップと、
前記第一延伸層下に浮上状態のグリッド状構造を形成するステップと、
前記第一延伸層上に第二延伸層を形成するステップと、
前記第二延伸層上に回路層を形成するステップと、
前記基材の背面であって前記浅い槽と対応する箇所に深い槽を形成し、かつ前記浅い槽と前記深い槽が連通するようにするステップと、
前記支持梁を除去するステップとを含む。
Claims (10)
- 基材を提供するステップと、
前記基材の正面に浅い槽と支持梁を形成するステップと、
前記基材の正面に第一延伸層を形成することにより前記浅い槽を覆うステップと、
前記第一延伸層の下に浮上状態のグリッド状構造を形成するステップと、
前記第一延伸層の上に第二延伸層を形成するステップと、
前記第二延伸層の上に回路層を形成するステップと、
前記基材の背面であって前記浅い槽と対応する箇所に深い槽を形成し、かつ前記浅い槽と前記深い槽が連通するようにするステップと、
前記支持梁を除去するステップとを含むことを特徴とするMEMSに基づいたセンサーの製作方法。 - 前記基材の正面に形成される浅い槽と支持梁はエッチング工程によって形成されることを特徴とする請求項1に記載の方法。
- 前記浅い槽の深さは50μm〜100μmであることを特徴とする請求項1に記載の方法。
- 前記第一延伸層の厚さは5μm〜10μmであることを特徴とする請求項1に記載の方法。
- 前記第二延伸層の厚さは12μm〜20μmであることを特徴とする請求項1に記載の方法。
- 前記第二延伸層上に回路層を形成する方法は、リソグラフィー、注入、拡散、腐食を含むことを特徴とする請求項1に記載の方法。
- 前記基材の背面であって前記浅い槽と対応する箇所に形成される深い槽はエッチング工程によって形成されることを特徴とする請求項1に記載の方法。
- 前記深い槽の深さは300μm〜400μmであることを特徴とする請求項1に記載の方法。
- 前記支持梁を除去することは、前記基材の背面から前記支持梁を腐食させることにより実施されることを特徴とする請求項1に記載の方法。
- 前記支持梁の数量は4つであることを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410231976.XA CN105174203B (zh) | 2014-05-28 | 2014-05-28 | 基于mems的传感器的制作方法 |
CN201410231976.X | 2014-05-28 | ||
PCT/CN2015/078245 WO2015180555A1 (zh) | 2014-05-28 | 2015-05-05 | 基于mems的传感器的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017516676A true JP2017516676A (ja) | 2017-06-22 |
JP6333464B2 JP6333464B2 (ja) | 2018-05-30 |
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JP2017500124A Active JP6333464B2 (ja) | 2014-05-28 | 2015-05-05 | Memsに基づいたセンサーの製作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9975766B2 (ja) |
EP (1) | EP3150548B1 (ja) |
JP (1) | JP6333464B2 (ja) |
CN (1) | CN105174203B (ja) |
WO (1) | WO2015180555A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106483758B (zh) | 2015-09-02 | 2019-08-20 | 无锡华润上华科技有限公司 | 光学邻近效应修正方法和系统 |
CN106653842B (zh) | 2015-10-28 | 2019-05-17 | 无锡华润上华科技有限公司 | 一种具有静电释放保护结构的半导体器件 |
CN106816468B (zh) | 2015-11-30 | 2020-07-10 | 无锡华润上华科技有限公司 | 具有resurf结构的横向扩散金属氧化物半导体场效应管 |
CN107465983B (zh) | 2016-06-03 | 2021-06-04 | 无锡华润上华科技有限公司 | Mems麦克风及其制备方法 |
CN110002395A (zh) * | 2019-04-10 | 2019-07-12 | 北京盛通恒瑞科贸有限公司 | 一种压阻式双轴运动传感器及其制作方法 |
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JP2011091353A (ja) * | 2009-10-26 | 2011-05-06 | Kinko Denshi Kofun Yugenkoshi | 回路構造 |
JP2014086467A (ja) * | 2012-10-19 | 2014-05-12 | Tohoku Univ | 半導体装置の製造方法及び半導体装置 |
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2014
- 2014-05-28 CN CN201410231976.XA patent/CN105174203B/zh active Active
-
2015
- 2015-05-05 WO PCT/CN2015/078245 patent/WO2015180555A1/zh active Application Filing
- 2015-05-05 JP JP2017500124A patent/JP6333464B2/ja active Active
- 2015-05-05 US US15/312,146 patent/US9975766B2/en active Active
- 2015-05-05 EP EP15800029.9A patent/EP3150548B1/en active Active
Patent Citations (4)
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JP2009516597A (ja) * | 2005-11-23 | 2009-04-23 | ヴィーテイアイ テクノロジーズ オーワイ | 微小電気機械素子を作製する方法及び微小電気機械素子 |
JP2007227875A (ja) * | 2006-01-24 | 2007-09-06 | Seiko Epson Corp | 薄膜半導体装置、電子機器及び製造方法 |
JP2011091353A (ja) * | 2009-10-26 | 2011-05-06 | Kinko Denshi Kofun Yugenkoshi | 回路構造 |
JP2014086467A (ja) * | 2012-10-19 | 2014-05-12 | Tohoku Univ | 半導体装置の製造方法及び半導体装置 |
Also Published As
Publication number | Publication date |
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CN105174203A (zh) | 2015-12-23 |
JP6333464B2 (ja) | 2018-05-30 |
EP3150548A1 (en) | 2017-04-05 |
WO2015180555A1 (zh) | 2015-12-03 |
EP3150548A4 (en) | 2018-01-03 |
US9975766B2 (en) | 2018-05-22 |
CN105174203B (zh) | 2016-09-28 |
US20170073224A1 (en) | 2017-03-16 |
EP3150548B1 (en) | 2018-12-19 |
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