TW200608492A - System for modifying small structures - Google Patents
System for modifying small structuresInfo
- Publication number
- TW200608492A TW200608492A TW094111535A TW94111535A TW200608492A TW 200608492 A TW200608492 A TW 200608492A TW 094111535 A TW094111535 A TW 094111535A TW 94111535 A TW94111535 A TW 94111535A TW 200608492 A TW200608492 A TW 200608492A
- Authority
- TW
- Taiwan
- Prior art keywords
- charge transfer
- small structures
- transfer mechanism
- modifying small
- immerse
- Prior art date
Links
- 238000010351 charge transfer process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56170104P | 2004-04-13 | 2004-04-13 | |
US11/081,934 US7674706B2 (en) | 2004-04-13 | 2005-03-16 | System for modifying small structures using localized charge transfer mechanism to remove or deposit material |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200608492A true TW200608492A (en) | 2006-03-01 |
TWI411043B TWI411043B (zh) | 2013-10-01 |
Family
ID=34938141
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094111535A TWI411043B (zh) | 2004-04-13 | 2005-04-12 | 修改小結構之系統 |
TW102124842A TWI493625B (zh) | 2004-04-13 | 2005-04-12 | 修改小結構之系統 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102124842A TWI493625B (zh) | 2004-04-13 | 2005-04-12 | 修改小結構之系統 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7674706B2 (zh) |
EP (1) | EP1610377B1 (zh) |
JP (1) | JP5285833B2 (zh) |
KR (3) | KR20060092786A (zh) |
AT (1) | ATE541309T1 (zh) |
TW (2) | TWI411043B (zh) |
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EP3078962B1 (en) * | 2006-01-20 | 2018-06-27 | Hitachi High-Technologies Corporation | Liquid medium for preventing charge-up in electron microscope and method of observing sample using the same |
CN102124553A (zh) * | 2006-08-01 | 2011-07-13 | Nxp股份有限公司 | 包含要求金属层与衬底之间的电压阈值的工艺的用于制造集成电子电路的工艺 |
JP5181105B2 (ja) * | 2007-03-02 | 2013-04-10 | 株式会社日立ハイテクサイエンス | 集積回路の修正配線形成方法 |
US8278220B2 (en) * | 2008-08-08 | 2012-10-02 | Fei Company | Method to direct pattern metals on a substrate |
EP2199434A1 (en) | 2008-12-19 | 2010-06-23 | FEI Company | Method for forming microscopic structures on a substrate |
US8377722B2 (en) | 2010-02-10 | 2013-02-19 | International Business Machines Corporation | Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing |
US8853078B2 (en) | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
CN103702800B (zh) | 2011-06-30 | 2017-11-10 | 圣戈本陶瓷及塑料股份有限公司 | 包括氮化硅磨粒的磨料制品 |
US9783907B2 (en) * | 2011-08-02 | 2017-10-10 | Massachusetts Institute Of Technology | Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including Al—Mn and similar alloys |
US9255339B2 (en) * | 2011-09-19 | 2016-02-09 | Fei Company | Localized, in-vacuum modification of small structures |
WO2013049239A1 (en) | 2011-09-26 | 2013-04-04 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive articles including abrasive particulate materials, coated abrasives using the abrasive particulate materials and methods of forming |
KR102187425B1 (ko) | 2011-12-30 | 2020-12-09 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 형상화 연마입자 및 이의 형성방법 |
WO2013106602A1 (en) | 2012-01-10 | 2013-07-18 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having particular shapes and methods of forming such particles |
CA2860755C (en) | 2012-01-10 | 2018-01-30 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having complex shapes and methods of forming same |
EP2852473B1 (en) | 2012-05-23 | 2020-12-23 | Saint-Gobain Ceramics & Plastics Inc. | Shaped abrasive particles and methods of forming same |
IN2015DN00343A (zh) | 2012-06-29 | 2015-06-12 | Saint Gobain Ceramics | |
KR101736085B1 (ko) | 2012-10-15 | 2017-05-16 | 생-고뱅 어브레이시브즈, 인코포레이티드 | 특정한 형태들을 가진 연마 입자들 및 이러한 입자들을 형성하는 방법들 |
JP2014107469A (ja) * | 2012-11-29 | 2014-06-09 | Tokyo Electron Ltd | 半導体装置の製造方法及び製造装置 |
US9044781B2 (en) | 2012-12-04 | 2015-06-02 | Fei Company | Microfluidics delivery systems |
US9074119B2 (en) | 2012-12-31 | 2015-07-07 | Saint-Gobain Ceramics & Plastics, Inc. | Particulate materials and methods of forming same |
CA2984232C (en) | 2013-03-29 | 2021-07-20 | Saint-Gobain Abrasives, Inc. | Abrasive particles having particular shapes and methods of forming such particles |
TW201502263A (zh) | 2013-06-28 | 2015-01-16 | Saint Gobain Ceramics | 包含成形研磨粒子之研磨物品 |
EP3052270A4 (en) | 2013-09-30 | 2017-05-03 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particles and methods of forming same |
RU2642990C2 (ru) * | 2013-11-04 | 2018-01-29 | Аэроджет Рокетдайн, Инк. | Системы и способы наземных испытаний реактивных двигателей малой тяги |
KR101870617B1 (ko) | 2013-12-31 | 2018-06-26 | 생-고뱅 어브레이시브즈, 인코포레이티드 | 형상화 연마 입자들을 포함하는 연마 물품 |
US9771507B2 (en) | 2014-01-31 | 2017-09-26 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particle including dopant material and method of forming same |
EP3131705A4 (en) | 2014-04-14 | 2017-12-06 | Saint-Gobain Ceramics and Plastics, Inc. | Abrasive article including shaped abrasive particles |
EP4306610A3 (en) | 2014-04-14 | 2024-04-03 | Saint-Gobain Ceramics and Plastics, Inc. | Abrasive article including shaped abrasive particles |
US9902045B2 (en) | 2014-05-30 | 2018-02-27 | Saint-Gobain Abrasives, Inc. | Method of using an abrasive article including shaped abrasive particles |
US9707529B2 (en) | 2014-12-23 | 2017-07-18 | Saint-Gobain Ceramics & Plastics, Inc. | Composite shaped abrasive particles and method of forming same |
US9914864B2 (en) | 2014-12-23 | 2018-03-13 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particles and method of forming same |
US9676981B2 (en) | 2014-12-24 | 2017-06-13 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particle fractions and method of forming same |
EP3043372B1 (en) | 2015-01-12 | 2017-01-04 | Fei Company | Method of modifying a sample surface layer from a microscopic sample |
TWI634200B (zh) | 2015-03-31 | 2018-09-01 | 聖高拜磨料有限公司 | 固定磨料物品及其形成方法 |
CN116967949A (zh) | 2015-03-31 | 2023-10-31 | 圣戈班磨料磨具有限公司 | 固定磨料制品和其形成方法 |
EP3307483B1 (en) | 2015-06-11 | 2020-06-17 | Saint-Gobain Ceramics&Plastics, Inc. | Abrasive article including shaped abrasive particles |
EP4071224A3 (en) | 2016-05-10 | 2023-01-04 | Saint-Gobain Ceramics and Plastics, Inc. | Methods of forming abrasive articles |
EP3519134B1 (en) | 2016-09-29 | 2024-01-17 | Saint-Gobain Abrasives, Inc. | Fixed abrasive articles and methods of forming same |
US10563105B2 (en) | 2017-01-31 | 2020-02-18 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive article including shaped abrasive particles |
US10759024B2 (en) | 2017-01-31 | 2020-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive article including shaped abrasive particles |
US20180322972A1 (en) * | 2017-05-04 | 2018-11-08 | General Electric Company | System and method for making a solid target within a production chamber of a target assembly |
US10865148B2 (en) | 2017-06-21 | 2020-12-15 | Saint-Gobain Ceramics & Plastics, Inc. | Particulate materials and methods of forming same |
KR102619877B1 (ko) | 2019-09-11 | 2024-01-03 | 삼성전자주식회사 | 기판 처리 장치 |
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US6696360B2 (en) * | 2001-03-15 | 2004-02-24 | Micron Technology, Inc. | Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow |
US6670717B2 (en) * | 2001-10-15 | 2003-12-30 | International Business Machines Corporation | Structure and method for charge sensitive electrical devices |
KR100465063B1 (ko) * | 2002-04-01 | 2005-01-06 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
US6974768B1 (en) * | 2003-01-15 | 2005-12-13 | Novellus Systems, Inc. | Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films |
JP2004221449A (ja) * | 2003-01-17 | 2004-08-05 | Sumitomo Metal Mining Co Ltd | 多層配線基板およびその製造方法 |
US7087927B1 (en) * | 2003-07-22 | 2006-08-08 | National Semiconductor Corporation | Semiconductor die with an editing structure |
-
2005
- 2005-03-16 US US11/081,934 patent/US7674706B2/en active Active
- 2005-04-07 AT AT05075796T patent/ATE541309T1/de active
- 2005-04-07 EP EP05075796A patent/EP1610377B1/en not_active Not-in-force
- 2005-04-11 KR KR1020050029849A patent/KR20060092786A/ko not_active Application Discontinuation
- 2005-04-12 TW TW094111535A patent/TWI411043B/zh not_active IP Right Cessation
- 2005-04-12 TW TW102124842A patent/TWI493625B/zh active
- 2005-04-13 JP JP2005116316A patent/JP5285833B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-28 US US12/695,808 patent/US8163641B2/en not_active Expired - Fee Related
-
2011
- 2011-10-28 KR KR1020110111669A patent/KR101290561B1/ko active IP Right Grant
-
2013
- 2013-02-26 KR KR1020130020647A patent/KR101290681B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20130032889A (ko) | 2013-04-02 |
EP1610377A3 (en) | 2009-04-29 |
TW201342479A (zh) | 2013-10-16 |
TWI411043B (zh) | 2013-10-01 |
KR20060092786A (ko) | 2006-08-23 |
US7674706B2 (en) | 2010-03-09 |
US20100151679A1 (en) | 2010-06-17 |
US8163641B2 (en) | 2012-04-24 |
KR20120002503A (ko) | 2012-01-05 |
TWI493625B (zh) | 2015-07-21 |
EP1610377B1 (en) | 2012-01-11 |
JP2005303319A (ja) | 2005-10-27 |
EP1610377A2 (en) | 2005-12-28 |
KR101290561B1 (ko) | 2013-08-07 |
KR101290681B1 (ko) | 2013-07-31 |
JP5285833B2 (ja) | 2013-09-11 |
US20050227484A1 (en) | 2005-10-13 |
ATE541309T1 (de) | 2012-01-15 |
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