TW200605151A - Lift-off process for gan films formed on sic substrates and devices fabricated using the method - Google Patents

Lift-off process for gan films formed on sic substrates and devices fabricated using the method

Info

Publication number
TW200605151A
TW200605151A TW094111026A TW94111026A TW200605151A TW 200605151 A TW200605151 A TW 200605151A TW 094111026 A TW094111026 A TW 094111026A TW 94111026 A TW94111026 A TW 94111026A TW 200605151 A TW200605151 A TW 200605151A
Authority
TW
Taiwan
Prior art keywords
lift
layer
device structure
substrate
films formed
Prior art date
Application number
TW094111026A
Other languages
English (en)
Inventor
Shuji Nakamura
Steven Denbaars
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200605151A publication Critical patent/TW200605151A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW094111026A 2004-05-06 2005-04-07 Lift-off process for gan films formed on sic substrates and devices fabricated using the method TW200605151A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/841,016 US7825006B2 (en) 2004-05-06 2004-05-06 Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method

Publications (1)

Publication Number Publication Date
TW200605151A true TW200605151A (en) 2006-02-01

Family

ID=34963381

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111026A TW200605151A (en) 2004-05-06 2005-04-07 Lift-off process for gan films formed on sic substrates and devices fabricated using the method

Country Status (8)

Country Link
US (1) US7825006B2 (zh)
EP (2) EP1759424B1 (zh)
JP (1) JP2007536732A (zh)
KR (1) KR101203365B1 (zh)
CN (1) CN1950957A (zh)
CA (1) CA2564957A1 (zh)
TW (1) TW200605151A (zh)
WO (1) WO2005112138A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385705B (zh) * 2008-10-31 2013-02-11 Syn Mate Co Ltd A laser module for separating the substrate and the epitaxial layer and a method thereof
TWI514560B (zh) * 2011-12-20 2015-12-21 Intel Corp 矽上iii-v族半導體裝置之混合整合

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TWI385705B (zh) * 2008-10-31 2013-02-11 Syn Mate Co Ltd A laser module for separating the substrate and the epitaxial layer and a method thereof
TWI514560B (zh) * 2011-12-20 2015-12-21 Intel Corp 矽上iii-v族半導體裝置之混合整合

Also Published As

Publication number Publication date
US20050247950A1 (en) 2005-11-10
EP2410581B1 (en) 2020-06-10
KR101203365B1 (ko) 2012-11-21
JP2007536732A (ja) 2007-12-13
CA2564957A1 (en) 2005-11-24
KR20070013299A (ko) 2007-01-30
EP2410581A1 (en) 2012-01-25
EP1759424A1 (en) 2007-03-07
US7825006B2 (en) 2010-11-02
WO2005112138A1 (en) 2005-11-24
EP1759424B1 (en) 2019-05-01
CN1950957A (zh) 2007-04-18

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