TW200512951A - Fabrication of conductive metal layer on semiconductor devices - Google Patents

Fabrication of conductive metal layer on semiconductor devices

Info

Publication number
TW200512951A
TW200512951A TW092125951A TW92125951A TW200512951A TW 200512951 A TW200512951 A TW 200512951A TW 092125951 A TW092125951 A TW 092125951A TW 92125951 A TW92125951 A TW 92125951A TW 200512951 A TW200512951 A TW 200512951A
Authority
TW
Taiwan
Prior art keywords
conductive metal
light emitting
fabrication
emitting device
metal layer
Prior art date
Application number
TW092125951A
Other languages
Chinese (zh)
Other versions
TWI241030B (en
Inventor
xue-jun Kang
Dai-Ke Wu
Edward Robert Perry
Original Assignee
Nitride Technologies Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitride Technologies Pte Ltd filed Critical Nitride Technologies Pte Ltd
Publication of TW200512951A publication Critical patent/TW200512951A/en
Application granted granted Critical
Publication of TWI241030B publication Critical patent/TWI241030B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiply epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN emitting diode or laser diode.
TW092125951A 2003-09-19 2003-09-19 Fabrication of conductive metal layer on semiconductor devices TWI241030B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI20030358 2003-09-19
PCT/SG2003/000222 WO2005029572A1 (en) 2003-09-19 2003-09-19 Fabrication of conductive metal layer on semiconductor devices

Publications (2)

Publication Number Publication Date
TW200512951A true TW200512951A (en) 2005-04-01
TWI241030B TWI241030B (en) 2005-10-01

Family

ID=34374556

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092125951A TWI241030B (en) 2003-09-19 2003-09-19 Fabrication of conductive metal layer on semiconductor devices

Country Status (7)

Country Link
US (1) US20080210970A1 (en)
EP (1) EP1668687A4 (en)
JP (1) JP2007529099A (en)
CN (2) CN100452328C (en)
AU (1) AU2003263726A1 (en)
TW (1) TWI241030B (en)
WO (1) WO2005029572A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741791B (en) * 2020-09-16 2021-10-01 南亞科技股份有限公司 Wafer inspection method and system

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI228272B (en) * 2003-09-19 2005-02-21 Tinggi Technologies Pte Ltd Fabrication of semiconductor devices
EP1730790B1 (en) 2004-03-15 2011-11-09 Tinggi Technologies Private Limited Fabrication of semiconductor devices
EP1756875A4 (en) * 2004-04-07 2010-12-29 Tinggi Technologies Private Ltd Fabrication of reflective layer on semiconductor light emitting diodes
US7119025B2 (en) * 2004-04-08 2006-10-10 Micron Technology, Inc. Methods of eliminating pattern collapse on photoresist patterns
US7186580B2 (en) 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7378288B2 (en) 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7413918B2 (en) 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8680534B2 (en) 2005-01-11 2014-03-25 Semileds Corporation Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
JP5278317B2 (en) 2007-06-29 2013-09-04 豊田合成株式会社 Manufacturing method of light emitting diode
WO2009005477A1 (en) * 2007-07-04 2009-01-08 Tinggi Technologies Private Limited Separation of semiconductor devices
SG148895A1 (en) 2007-07-04 2009-01-29 Tinggi Technologies Private Ltd Separation of semiconductor devices for light emission
US8102045B2 (en) 2007-08-08 2012-01-24 Infineon Technologies Ag Integrated circuit with galvanically bonded heat sink
CN101369615B (en) * 2007-08-17 2010-11-10 广东昭信光电科技有限公司 Packaging method for low-thermal resistance high-power light-emitting diode
GB0721957D0 (en) 2007-11-08 2007-12-19 Photonstar Led Ltd Ultra high thermal performance packaging for optoelectronics devices
WO2009146583A1 (en) * 2008-06-02 2009-12-10 Hong Kong Applied Science and Technology Research Institute Co. Ltd Semiconductor wafer, semiconductor device and methods for manufacturing semiconductor wafer and device
CN102637788B (en) * 2008-06-02 2014-06-25 香港应用科技研究院有限公司 Semiconductor wafer and semiconductor device
KR100969146B1 (en) * 2009-02-18 2010-07-08 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
CN102709405A (en) * 2011-03-28 2012-10-03 同方光电科技有限公司 Manufacturing method for light emitting diode (LED) metal base board
WO2013094078A1 (en) * 2011-12-21 2013-06-27 ウェーブスクエア，インコーポレイテッド Semiconductor element, method for producing same, and combination of semiconductor elements
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
CN102751401B (en) * 2012-07-25 2013-04-03 江苏汉莱科技有限公司 Method for improving yield in light-emitting diode (LED) chip production process
US11295963B2 (en) 2016-11-14 2022-04-05 King Abdullah University Of Science And Technology Microfabrication techniques and devices for thermal management of electronic devices
CN113862770B (en) * 2021-09-28 2023-12-26 北京航空航天大学杭州创新研究院 Method for preparing patterned electrode by adopting deplating process

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350392Y2 (en) * 1973-11-14 1978-12-02
US3897627A (en) * 1974-06-28 1975-08-05 Rca Corp Method for manufacturing semiconductor devices
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
JPS5831751B2 (en) * 1975-10-31 1983-07-08 松下電器産業株式会社 Manufacturing method of semiconductor laser
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
JPS59112667A (en) * 1982-12-17 1984-06-29 Fujitsu Ltd Light emitting diode
JPH0319369A (en) * 1989-06-16 1991-01-28 Fujitsu Ltd Semiconductor device
JPH0478186A (en) * 1990-07-19 1992-03-12 Nec Corp Semiconductor laser
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5405804A (en) * 1993-01-22 1995-04-11 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device by laser annealing a metal layer through an insulator
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
US5811927A (en) * 1996-06-21 1998-09-22 Motorola, Inc. Method for affixing spacers within a flat panel display
US6210479B1 (en) * 1999-02-26 2001-04-03 International Business Machines Corporation Product and process for forming a semiconductor structure on a host substrate
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6559038B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
KR19990052640A (en) * 1997-12-23 1999-07-15 김효근 Metal thin film for diode using ohmic contact formation and manufacturing method thereof
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3525061B2 (en) * 1998-09-25 2004-05-10 株式会社東芝 Method for manufacturing semiconductor light emitting device
US6343171B1 (en) * 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
US6020261A (en) * 1999-06-01 2000-02-01 Motorola, Inc. Process for forming high aspect ratio circuit features
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US20020068373A1 (en) * 2000-02-16 2002-06-06 Nova Crystals, Inc. Method for fabricating light emitting diodes
JP4060511B2 (en) * 2000-03-28 2008-03-12 パイオニア株式会社 Method for separating nitride semiconductor device
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US6380564B1 (en) 2000-08-16 2002-04-30 United Epitaxy Company, Ltd. Semiconductor light emitting device
DE10040448A1 (en) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Semiconductor chip and method for its production
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
TW466784B (en) * 2000-09-19 2001-12-01 United Epitaxy Co Ltd Method to manufacture high luminescence LED by using glass pasting
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP3970530B2 (en) * 2001-02-19 2007-09-05 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US6468824B2 (en) * 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6589857B2 (en) * 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
US6509270B1 (en) * 2001-03-30 2003-01-21 Cypress Semiconductor Corp. Method for polishing a semiconductor topography
US20030064535A1 (en) * 2001-09-28 2003-04-03 Kub Francis J. Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
JP3782357B2 (en) * 2002-01-18 2006-06-07 株式会社東芝 Manufacturing method of semiconductor light emitting device
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP3896027B2 (en) * 2002-04-17 2007-03-22 シャープ株式会社 Nitride-based semiconductor light-emitting device and method for manufacturing the same
JP4233268B2 (en) * 2002-04-23 2009-03-04 シャープ株式会社 Nitride-based semiconductor light-emitting device and manufacturing method thereof
JP3962282B2 (en) * 2002-05-23 2007-08-22 松下電器産業株式会社 Manufacturing method of semiconductor device
JP2004014938A (en) * 2002-06-10 2004-01-15 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US7038288B2 (en) * 2002-09-25 2006-05-02 Microsemi Corporation Front side illuminated photodiode with backside bump
KR100495215B1 (en) * 2002-12-27 2005-06-14 삼성전기주식회사 VERTICAL GaN LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
CN1802755B (en) * 2003-05-09 2012-05-16 克里公司 LED fabrication via ion implant isolation
JP4295669B2 (en) * 2003-05-22 2009-07-15 パナソニック株式会社 Manufacturing method of semiconductor device
US7244628B2 (en) * 2003-05-22 2007-07-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor devices
TWI228272B (en) * 2003-09-19 2005-02-21 Tinggi Technologies Pte Ltd Fabrication of semiconductor devices
US7186580B2 (en) * 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741791B (en) * 2020-09-16 2021-10-01 南亞科技股份有限公司 Wafer inspection method and system

Also Published As

Publication number Publication date
CN100452328C (en) 2009-01-14
US20080210970A1 (en) 2008-09-04
AU2003263726A1 (en) 2005-04-11
JP2007529099A (en) 2007-10-18
WO2005029572A1 (en) 2005-03-31
CN101373807A (en) 2009-02-25
CN1839470A (en) 2006-09-27
CN101373807B (en) 2010-06-09
EP1668687A4 (en) 2007-11-07
TWI241030B (en) 2005-10-01
EP1668687A1 (en) 2006-06-14

Similar Documents

Publication Publication Date Title
TW200512951A (en) Fabrication of conductive metal layer on semiconductor devices
TW200620704A (en) Nitride-based compound semiconductor light emitting device
TW200512801A (en) Fabrication of semiconductor devices
TW200605151A (en) Lift-off process for gan films formed on sic substrates and devices fabricated using the method
TW200509422A (en) Light-emitting device and manufacturing method thereof
US7892891B2 (en) Die separation
TW200608605A (en) Method for fabricating group Ⅲ nitride devices and devices fabricated using method
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
WO2007044322A3 (en) Conductive layer for biaxially oriented semiconductor film growth
WO2002069410A3 (en) Gallium nitride material devices including backside vias and methods of fabrication
SG145722A1 (en) Light emitting apparatus
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
WO2004075253A3 (en) Inverted light emitting diode on conductive substrate
TW200707564A (en) Light-emitting diode, integrated light-emitting diode and production method thereof, nitride-based III-v compound semiconductor deposition method, light source cell unit, light emitting diode backlight, light emitting diode display, and electronic device
TW200518364A (en) Semiconductor light emitting diode and method for manufacturing the same
WO2006014996A3 (en) Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
US20210358792A1 (en) Method for Producing Optoelectronic Devices
TW200705712A (en) Method of producing nitride-based semiconductor device, and light-emitting device produced thereby
US20080274575A1 (en) Vertical semiconductor light-emitting device and method of manufacturing the same
CN101834239B (en) Light-emitting diode with reflecting and low-impedance contact electrode and manufacturing method thereof
US10411155B2 (en) Method of producing optoelectronic semiconductor chips
AU2003233372A1 (en) Schottky power diode comprising a sicoi substrate and the method of producing one such diode
TW200640032A (en) Substrate-free flip chip light emitting diode and manufacturing method thereof
TW200507260A (en) A semiconductor device and method for fabricating the same
TWI721340B (en) Led and a method for manufacturing the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees