TW200602301A - Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern - Google Patents

Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern

Info

Publication number
TW200602301A
TW200602301A TW094104884A TW94104884A TW200602301A TW 200602301 A TW200602301 A TW 200602301A TW 094104884 A TW094104884 A TW 094104884A TW 94104884 A TW94104884 A TW 94104884A TW 200602301 A TW200602301 A TW 200602301A
Authority
TW
Taiwan
Prior art keywords
fluorine
atom
same
resist material
cyclic
Prior art date
Application number
TW094104884A
Other languages
English (en)
Chinese (zh)
Other versions
TWI309640B (ja
Inventor
Haruhiko Komoriya
Shinichi Sumida
Michitaka Ootani
Takeo Komata
Kazuhiko Maeda
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of TW200602301A publication Critical patent/TW200602301A/zh
Application granted granted Critical
Publication of TWI309640B publication Critical patent/TWI309640B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C33/00—Unsaturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C33/40—Halogenated unsaturated alcohols
    • C07C33/44—Halogenated unsaturated alcohols containing rings other than six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
    • C07C31/34—Halogenated alcohols
    • C07C31/44—Halogenated alcohols containing saturated rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/29—Saturated compounds containing keto groups bound to rings
    • C07C49/337—Saturated compounds containing keto groups bound to rings containing hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/527—Unsaturated compounds containing keto groups bound to rings other than six-membered aromatic rings
    • C07C49/573—Unsaturated compounds containing keto groups bound to rings other than six-membered aromatic rings containing hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/62—Halogen-containing esters
    • C07C69/65—Halogen-containing esters of unsaturated acids
    • C07C69/653—Acrylic acid esters; Methacrylic acid esters; Haloacrylic acid esters; Halomethacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094104884A 2004-02-20 2005-02-18 Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern TW200602301A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004044142A JP4079893B2 (ja) 2004-02-20 2004-02-20 含フッ素環状化合物、含フッ素高分子化合物、それを用いたレジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200602301A true TW200602301A (en) 2006-01-16
TWI309640B TWI309640B (ja) 2009-05-11

Family

ID=34879332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094104884A TW200602301A (en) 2004-02-20 2005-02-18 Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern

Country Status (5)

Country Link
US (2) US7736835B2 (ja)
JP (1) JP4079893B2 (ja)
KR (1) KR100849126B1 (ja)
TW (1) TW200602301A (ja)
WO (1) WO2005080306A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400231B (zh) * 2008-12-15 2013-07-01 Central Glass Co Ltd A fluorine-containing polymerizable monomer, a fluorine-containing polymer, a resist material, and a pattern forming method
TWI498364B (zh) * 2014-04-28 2015-09-01 Taimide Technology Inc 低介電常數及低光澤度之聚醯亞胺膜及其製備方法

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JP4448782B2 (ja) * 2004-03-18 2010-04-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7906268B2 (en) 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP4539847B2 (ja) * 2004-04-09 2010-09-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
DE102005046166A1 (de) * 2005-09-27 2007-03-29 Siemens Ag Verfahren bzw. System zur Darstellung einer Internetseite auf einer Visualisierungseinrichtung einer industriellen Automatisierungseinrichtung
JP5023609B2 (ja) * 2005-09-28 2012-09-12 セントラル硝子株式会社 低分子又は中分子有機化合物からなるコーティング材料
JP4983605B2 (ja) * 2005-12-05 2012-07-25 ダイキン工業株式会社 α，β−不飽和エステル基を含有する含フッ素ノルボルネン誘導体または含フッ素ノルボルナン誘導体を含む硬化性含フッ素ポリマー組成物
JP4717640B2 (ja) * 2005-12-12 2011-07-06 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP4912733B2 (ja) 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
KR101242332B1 (ko) 2006-10-17 2013-03-12 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 이것을 이용한 패턴 형성 방법
JP4355011B2 (ja) 2006-11-07 2009-10-28 丸善石油化学株式会社 液浸リソグラフィー用共重合体及び組成物
JP2008145667A (ja) * 2006-12-08 2008-06-26 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
CA2802973C (en) * 2010-06-18 2017-09-12 Shandong Huaxia Shenzhou New Material Co., Ltd Fluorine containing ionomer composite with ion exchange function, preparation method and use thereof
JP5675664B2 (ja) * 2012-01-24 2015-02-25 信越化学工業株式会社 パターン形成方法
KR101759624B1 (ko) 2012-12-26 2017-07-20 샌트랄 글래스 컴퍼니 리미티드 헥사플루오로이소프로판올기를 포함하는 노볼락 수지 및 그 제조 방법과 그 조성물
JP2013241595A (ja) * 2013-05-27 2013-12-05 Shin-Etsu Chemical Co Ltd 含フッ素単量体、高分子化合物、レジスト材料及びパターン形成方法
WO2023187690A1 (en) * 2022-03-30 2023-10-05 Oti Lumionics Inc. Nitrogen-containing heterocyclic compounds for forming a patterning coating and devices incorporating same

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US3627847A (en) 1967-11-16 1971-12-14 Du Pont 1, 1-bis (trihalo-methyl)-1,3-glycols
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US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
JPH08241913A (ja) 1995-03-06 1996-09-17 Toppan Printing Co Ltd 半導体パッケージ材料および半導体パッケージ
US6200725B1 (en) 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US6200726B1 (en) * 1996-09-16 2001-03-13 International Business Machines Corporation Optimization of space width for hybrid photoresist
JP2000089463A (ja) 1998-09-11 2000-03-31 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6787286B2 (en) * 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
JP3999030B2 (ja) * 2001-12-13 2007-10-31 セントラル硝子株式会社 含フッ素重合性単量体およびそれを用いた高分子化合物、反射防止膜材料
KR100486245B1 (ko) * 2001-12-19 2005-05-03 삼성전자주식회사 하이드레이트 구조를 가지는 플루오르 함유 감광성 폴리머및 이를 포함하는 레지스트 조성물
JP4073337B2 (ja) 2002-02-26 2008-04-09 富士フイルム株式会社 感光性樹脂組成物
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
JP4073253B2 (ja) 2002-05-31 2008-04-09 富士フイルム株式会社 ポジ型レジスト組成物
KR100740803B1 (ko) * 2002-11-05 2007-07-19 샌트랄 글래스 컴퍼니 리미티드 불소가 함유된 비닐 에테르 및 이들의 중합체와 상기중합체를 이용한 레지스트 조성물
US7067691B2 (en) * 2003-12-26 2006-06-27 Central Glass Co., Ltd. Process for producing α-substituted acrylic acid esters
US7205443B2 (en) * 2004-01-27 2007-04-17 Central Glass Company, Limited Processes for producing fluorine-containing 2,4-diols and their derivatives
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
US7385091B2 (en) * 2005-08-03 2008-06-10 Central Glass Co., Ltd. Process for producing fluorine-containing diol and its derivatives

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400231B (zh) * 2008-12-15 2013-07-01 Central Glass Co Ltd A fluorine-containing polymerizable monomer, a fluorine-containing polymer, a resist material, and a pattern forming method
US8716385B2 (en) 2008-12-15 2014-05-06 Central Glass Company, Limited Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
US9678426B2 (en) 2008-12-15 2017-06-13 Central Glass Company, Limited Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
US9678425B2 (en) 2008-12-15 2017-06-13 Central Glass Company, Limited Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
TWI498364B (zh) * 2014-04-28 2015-09-01 Taimide Technology Inc 低介電常數及低光澤度之聚醯亞胺膜及其製備方法
US10040939B2 (en) 2014-04-28 2018-08-07 Taimide Technology Incorporation Polyimide film having a low dielectric constant and a low gloss, and method of fabricating the same

Also Published As

Publication number Publication date
KR20060117361A (ko) 2006-11-16
JP4079893B2 (ja) 2008-04-23
US8115036B2 (en) 2012-02-14
KR100849126B1 (ko) 2008-07-30
JP2005232095A (ja) 2005-09-02
WO2005080306A1 (ja) 2005-09-01
TWI309640B (ja) 2009-05-11
US20080003517A1 (en) 2008-01-03
US7736835B2 (en) 2010-06-15
US20100204422A1 (en) 2010-08-12

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees