TW200537580A - Line edge roughness control - Google Patents

Line edge roughness control Download PDF

Info

Publication number
TW200537580A
TW200537580A TW094107021A TW94107021A TW200537580A TW 200537580 A TW200537580 A TW 200537580A TW 094107021 A TW094107021 A TW 094107021A TW 94107021 A TW94107021 A TW 94107021A TW 200537580 A TW200537580 A TW 200537580A
Authority
TW
Taiwan
Prior art keywords
arc
layer
etched
patent application
gas mixture
Prior art date
Application number
TW094107021A
Other languages
English (en)
Chinese (zh)
Inventor
Young-Jin Choi
Helen H Zhu
Sang-Heon Lee
Sean S Kang
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200537580A publication Critical patent/TW200537580A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Drying Of Semiconductors (AREA)
TW094107021A 2004-03-10 2005-03-08 Line edge roughness control TW200537580A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/798,456 US20040171260A1 (en) 2002-06-14 2004-03-10 Line edge roughness control

Publications (1)

Publication Number Publication Date
TW200537580A true TW200537580A (en) 2005-11-16

Family

ID=34961922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107021A TW200537580A (en) 2004-03-10 2005-03-08 Line edge roughness control

Country Status (6)

Country Link
US (1) US20040171260A1 (https=)
JP (1) JP2007528610A (https=)
KR (1) KR20070011306A (https=)
CN (1) CN101027759A (https=)
TW (1) TW200537580A (https=)
WO (1) WO2005088693A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US20090311871A1 (en) * 2008-06-13 2009-12-17 Lam Research Corporation Organic arc etch selective for immersion photoresist
TWI826650B (zh) 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
GB201315424D0 (en) * 2013-08-29 2013-10-16 Occles Ltd An eye cover device
KR102202517B1 (ko) * 2014-07-13 2021-01-13 케이엘에이 코포레이션 오버레이 및 수율 임계 패턴을 이용한 계측
US9899219B2 (en) * 2016-02-19 2018-02-20 Tokyo Electron Limited Trimming inorganic resists with selected etchant gas mixture and modulation of operating variables
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除

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Also Published As

Publication number Publication date
US20040171260A1 (en) 2004-09-02
WO2005088693A1 (en) 2005-09-22
KR20070011306A (ko) 2007-01-24
CN101027759A (zh) 2007-08-29
JP2007528610A (ja) 2007-10-11

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