JP2007528610A - ラインエッジラフネス制御 - Google Patents

ラインエッジラフネス制御 Download PDF

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Publication number
JP2007528610A
JP2007528610A JP2007502898A JP2007502898A JP2007528610A JP 2007528610 A JP2007528610 A JP 2007528610A JP 2007502898 A JP2007502898 A JP 2007502898A JP 2007502898 A JP2007502898 A JP 2007502898A JP 2007528610 A JP2007528610 A JP 2007528610A
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JP
Japan
Prior art keywords
arc
layer
etching
arc opening
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007502898A
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English (en)
Japanese (ja)
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JP2007528610A5 (https=
Inventor
チョウイ・ヤンジン
チュー・ヘレン・エイチ．
リー・サンヘオン
カン・ショーン・エス．
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2007528610A publication Critical patent/JP2007528610A/ja
Publication of JP2007528610A5 publication Critical patent/JP2007528610A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Drying Of Semiconductors (AREA)
JP2007502898A 2004-03-10 2005-03-02 ラインエッジラフネス制御 Pending JP2007528610A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/798,456 US20040171260A1 (en) 2002-06-14 2004-03-10 Line edge roughness control
PCT/US2005/007386 WO2005088693A1 (en) 2004-03-10 2005-03-02 Line edge roughness control

Publications (2)

Publication Number Publication Date
JP2007528610A true JP2007528610A (ja) 2007-10-11
JP2007528610A5 JP2007528610A5 (https=) 2008-10-02

Family

ID=34961922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007502898A Pending JP2007528610A (ja) 2004-03-10 2005-03-02 ラインエッジラフネス制御

Country Status (6)

Country Link
US (1) US20040171260A1 (https=)
JP (1) JP2007528610A (https=)
KR (1) KR20070011306A (https=)
CN (1) CN101027759A (https=)
TW (1) TW200537580A (https=)
WO (1) WO2005088693A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US20090311871A1 (en) * 2008-06-13 2009-12-17 Lam Research Corporation Organic arc etch selective for immersion photoresist
TWI826650B (zh) 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
GB201315424D0 (en) * 2013-08-29 2013-10-16 Occles Ltd An eye cover device
KR102202517B1 (ko) * 2014-07-13 2021-01-13 케이엘에이 코포레이션 오버레이 및 수율 임계 패턴을 이용한 계측
US9899219B2 (en) * 2016-02-19 2018-02-20 Tokyo Electron Limited Trimming inorganic resists with selected etchant gas mixture and modulation of operating variables
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133287A (ja) * 2001-10-30 2003-05-09 Matsushita Electric Ind Co Ltd ドライエッチング方法
WO2004003988A1 (ja) * 2002-06-27 2004-01-08 Tokyo Electron Limited プラズマ処理方法

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DE3122641A1 (de) * 1981-06-06 1982-12-23 Herberts Gmbh, 5600 Wuppertal Kathodisch abscheidbares waessriges elektrotauchlack-ueberzugsmittel
JPS63104425A (ja) * 1986-10-09 1988-05-09 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション バイアの形成方法
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
EP0406434B1 (en) * 1988-11-18 1996-07-17 Kabushiki Kaisha Shibaura Seisakusho Dry-etching method
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5300460A (en) * 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
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JPH04354331A (ja) * 1991-05-31 1992-12-08 Sony Corp ドライエッチング方法
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
US6194325B1 (en) * 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
JP3309717B2 (ja) * 1996-06-26 2002-07-29 三菱電機株式会社 集積回路の配線の製造方法
JP2904163B2 (ja) * 1996-12-11 1999-06-14 日本電気株式会社 半導体装置の製造方法
JP3027951B2 (ja) * 1997-03-12 2000-04-04 日本電気株式会社 半導体装置の製造方法
US5846884A (en) * 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
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US6074959A (en) * 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
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US5965035A (en) * 1997-10-23 1999-10-12 Applied Materials, Inc. Self aligned contact etch using difluoromethane and trifluoromethane
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US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
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JP5038567B2 (ja) * 2001-09-26 2012-10-03 東京エレクトロン株式会社 エッチング方法
US6867145B2 (en) * 2001-12-17 2005-03-15 Hynix Semiconductor Inc. Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7473377B2 (en) * 2002-06-27 2009-01-06 Tokyo Electron Limited Plasma processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133287A (ja) * 2001-10-30 2003-05-09 Matsushita Electric Ind Co Ltd ドライエッチング方法
WO2004003988A1 (ja) * 2002-06-27 2004-01-08 Tokyo Electron Limited プラズマ処理方法

Also Published As

Publication number Publication date
TW200537580A (en) 2005-11-16
US20040171260A1 (en) 2004-09-02
WO2005088693A1 (en) 2005-09-22
KR20070011306A (ko) 2007-01-24
CN101027759A (zh) 2007-08-29

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