KR20070011306A - 라인 에지 러프니스 컨트롤 - Google Patents

라인 에지 러프니스 컨트롤 Download PDF

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Publication number
KR20070011306A
KR20070011306A KR1020067018628A KR20067018628A KR20070011306A KR 20070011306 A KR20070011306 A KR 20070011306A KR 1020067018628 A KR1020067018628 A KR 1020067018628A KR 20067018628 A KR20067018628 A KR 20067018628A KR 20070011306 A KR20070011306 A KR 20070011306A
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KR
South Korea
Prior art keywords
arc
layer
etched
open
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067018628A
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English (en)
Korean (ko)
Inventor
영진 최
헬렌 에이치 주
상헌 이
션 에스 강
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20070011306A publication Critical patent/KR20070011306A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Drying Of Semiconductors (AREA)
KR1020067018628A 2004-03-10 2005-03-02 라인 에지 러프니스 컨트롤 Withdrawn KR20070011306A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/798,456 2004-03-10
US10/798,456 US20040171260A1 (en) 2002-06-14 2004-03-10 Line edge roughness control

Publications (1)

Publication Number Publication Date
KR20070011306A true KR20070011306A (ko) 2007-01-24

Family

ID=34961922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067018628A Withdrawn KR20070011306A (ko) 2004-03-10 2005-03-02 라인 에지 러프니스 컨트롤

Country Status (6)

Country Link
US (1) US20040171260A1 (https=)
JP (1) JP2007528610A (https=)
KR (1) KR20070011306A (https=)
CN (1) CN101027759A (https=)
TW (1) TW200537580A (https=)
WO (1) WO2005088693A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160206476A1 (en) * 2013-08-29 2016-07-21 Occles Ltd Eye cover device
US10354892B2 (en) 2012-11-26 2019-07-16 Applied Materials, Inc. Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US20090311871A1 (en) * 2008-06-13 2009-12-17 Lam Research Corporation Organic arc etch selective for immersion photoresist
KR102202517B1 (ko) * 2014-07-13 2021-01-13 케이엘에이 코포레이션 오버레이 및 수율 임계 패턴을 이용한 계측
US9899219B2 (en) * 2016-02-19 2018-02-20 Tokyo Electron Limited Trimming inorganic resists with selected etchant gas mixture and modulation of operating variables
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除

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JPS63104425A (ja) * 1986-10-09 1988-05-09 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション バイアの形成方法
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
EP0406434B1 (en) * 1988-11-18 1996-07-17 Kabushiki Kaisha Shibaura Seisakusho Dry-etching method
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5300460A (en) * 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
US6251792B1 (en) * 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
JP3038950B2 (ja) * 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
JP3000717B2 (ja) * 1991-04-26 2000-01-17 ソニー株式会社 ドライエッチング方法
JPH04354331A (ja) * 1991-05-31 1992-12-08 Sony Corp ドライエッチング方法
US6238588B1 (en) * 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
US6194325B1 (en) * 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
JP3309717B2 (ja) * 1996-06-26 2002-07-29 三菱電機株式会社 集積回路の配線の製造方法
JP2904163B2 (ja) * 1996-12-11 1999-06-14 日本電気株式会社 半導体装置の製造方法
JP3027951B2 (ja) * 1997-03-12 2000-04-04 日本電気株式会社 半導体装置の製造方法
US5846884A (en) * 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US5965463A (en) * 1997-07-03 1999-10-12 Applied Materials, Inc. Silane etching process
US6074959A (en) * 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
US6183655B1 (en) * 1997-09-19 2001-02-06 Applied Materials, Inc. Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
US5965035A (en) * 1997-10-23 1999-10-12 Applied Materials, Inc. Self aligned contact etch using difluoromethane and trifluoromethane
US5872061A (en) * 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6117786A (en) * 1998-05-05 2000-09-12 Lam Research Corporation Method for etching silicon dioxide using fluorocarbon gas chemistry
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6277758B1 (en) * 1998-07-23 2001-08-21 Micron Technology, Inc. Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher
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JP2003133287A (ja) * 2001-10-30 2003-05-09 Matsushita Electric Ind Co Ltd ドライエッチング方法
US6867145B2 (en) * 2001-12-17 2005-03-15 Hynix Semiconductor Inc. Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
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US7473377B2 (en) * 2002-06-27 2009-01-06 Tokyo Electron Limited Plasma processing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354892B2 (en) 2012-11-26 2019-07-16 Applied Materials, Inc. Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
US20160206476A1 (en) * 2013-08-29 2016-07-21 Occles Ltd Eye cover device

Also Published As

Publication number Publication date
TW200537580A (en) 2005-11-16
US20040171260A1 (en) 2004-09-02
WO2005088693A1 (en) 2005-09-22
CN101027759A (zh) 2007-08-29
JP2007528610A (ja) 2007-10-11

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P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

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PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000