TW200520076A - The manufacturing method of a semiconductor, semiconductor chip, semiconductor film chip, electronic tube, and photo detecting element - Google Patents
The manufacturing method of a semiconductor, semiconductor chip, semiconductor film chip, electronic tube, and photo detecting elementInfo
- Publication number
- TW200520076A TW200520076A TW093127371A TW93127371A TW200520076A TW 200520076 A TW200520076 A TW 200520076A TW 093127371 A TW093127371 A TW 093127371A TW 93127371 A TW93127371 A TW 93127371A TW 200520076 A TW200520076 A TW 200520076A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- cutting
- chip
- manufacturing
- detecting element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 229910003460 diamond Inorganic materials 0.000 abstract 2
- 239000010432 diamond Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
- B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003320121A JP2005086175A (ja) | 2003-09-11 | 2003-09-11 | 半導体薄膜の製造方法、半導体薄膜、半導体薄膜チップ、電子管、及び光検出素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200520076A true TW200520076A (en) | 2005-06-16 |
Family
ID=34308596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093127371A TW200520076A (en) | 2003-09-11 | 2004-09-10 | The manufacturing method of a semiconductor, semiconductor chip, semiconductor film chip, electronic tube, and photo detecting element |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070252154A1 (zh) |
JP (1) | JP2005086175A (zh) |
TW (1) | TW200520076A (zh) |
WO (1) | WO2005027213A1 (zh) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
TWI326626B (en) | 2002-03-12 | 2010-07-01 | Hamamatsu Photonics Kk | Laser processing method |
ES2285634T3 (es) | 2002-03-12 | 2007-11-16 | Hamamatsu Photonics K. K. | Metodo para dividir un siustrato. |
KR100749972B1 (ko) | 2002-03-12 | 2007-08-16 | 하마마츠 포토닉스 가부시키가이샤 | 가공 대상물 절단 방법 |
TWI520269B (zh) | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
FR2852250B1 (fr) | 2003-03-11 | 2009-07-24 | Jean Luc Jouvin | Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau |
US8685838B2 (en) | 2003-03-12 | 2014-04-01 | Hamamatsu Photonics K.K. | Laser beam machining method |
KR101193723B1 (ko) * | 2003-07-18 | 2012-10-22 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 기판, 반도체 기판의 절단방법 및 가공대상물의 절단방법 |
JP4563097B2 (ja) | 2003-09-10 | 2010-10-13 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
JP4509578B2 (ja) | 2004-01-09 | 2010-07-21 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP4598407B2 (ja) | 2004-01-09 | 2010-12-15 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP4601965B2 (ja) | 2004-01-09 | 2010-12-22 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP5138219B2 (ja) | 2004-03-30 | 2013-02-06 | 浜松ホトニクス株式会社 | レーザ加工方法 |
KR101190454B1 (ko) * | 2004-08-06 | 2012-10-11 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치 |
JP4630731B2 (ja) * | 2005-05-30 | 2011-02-09 | 株式会社ディスコ | ウエーハの分割方法 |
JP4762653B2 (ja) * | 2005-09-16 | 2011-08-31 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP4907965B2 (ja) * | 2005-11-25 | 2012-04-04 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP4655915B2 (ja) * | 2005-12-15 | 2011-03-23 | セイコーエプソン株式会社 | 層状基板の分割方法 |
JP4804911B2 (ja) * | 2005-12-22 | 2011-11-02 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP4907984B2 (ja) | 2005-12-27 | 2012-04-04 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップ |
JP2007235008A (ja) * | 2006-03-03 | 2007-09-13 | Denso Corp | ウェハの分断方法およびチップ |
JP2007237210A (ja) * | 2006-03-07 | 2007-09-20 | Aisin Seiki Co Ltd | レーザ加工法及び装置 |
JP4835927B2 (ja) * | 2006-06-28 | 2011-12-14 | アイシン精機株式会社 | 硬脆材料板体の分割加工方法 |
US7897487B2 (en) | 2006-07-03 | 2011-03-01 | Hamamatsu Photonics K.K. | Laser processing method and chip |
JP5183892B2 (ja) | 2006-07-03 | 2013-04-17 | 浜松ホトニクス株式会社 | レーザ加工方法 |
WO2008035679A1 (fr) * | 2006-09-19 | 2008-03-27 | Hamamatsu Photonics K. K. | Procédé de traitement au laser et appareil de traitement au laser |
JP4954653B2 (ja) | 2006-09-19 | 2012-06-20 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5101073B2 (ja) * | 2006-10-02 | 2012-12-19 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP4964554B2 (ja) * | 2006-10-03 | 2012-07-04 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5132911B2 (ja) * | 2006-10-03 | 2013-01-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
WO2008041604A1 (fr) * | 2006-10-04 | 2008-04-10 | Hamamatsu Photonics K.K. | Procédé de traitement laser |
JP5336054B2 (ja) * | 2007-07-18 | 2013-11-06 | 浜松ホトニクス株式会社 | 加工情報供給装置を備える加工情報供給システム |
JP5449665B2 (ja) * | 2007-10-30 | 2014-03-19 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5134928B2 (ja) * | 2007-11-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 加工対象物研削方法 |
JP5054496B2 (ja) * | 2007-11-30 | 2012-10-24 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5692969B2 (ja) | 2008-09-01 | 2015-04-01 | 浜松ホトニクス株式会社 | 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム |
JP5254761B2 (ja) | 2008-11-28 | 2013-08-07 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP5241527B2 (ja) | 2009-01-09 | 2013-07-17 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP5241525B2 (ja) | 2009-01-09 | 2013-07-17 | 浜松ホトニクス株式会社 | レーザ加工装置 |
EP2394775B1 (en) | 2009-02-09 | 2019-04-03 | Hamamatsu Photonics K.K. | Workpiece cutting method |
US9035216B2 (en) | 2009-04-07 | 2015-05-19 | Hamamatsu Photonics K.K. | Method and device for controlling interior fractures by controlling the laser pulse width |
JP5491761B2 (ja) | 2009-04-20 | 2014-05-14 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP5446631B2 (ja) * | 2009-09-10 | 2014-03-19 | アイシン精機株式会社 | レーザ加工方法及びレーザ加工装置 |
JP5653110B2 (ja) | 2010-07-26 | 2015-01-14 | 浜松ホトニクス株式会社 | チップの製造方法 |
US8722516B2 (en) | 2010-09-28 | 2014-05-13 | Hamamatsu Photonics K.K. | Laser processing method and method for manufacturing light-emitting device |
JP5480169B2 (ja) * | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5886603B2 (ja) * | 2011-11-11 | 2016-03-16 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP5646549B2 (ja) * | 2012-06-15 | 2014-12-24 | 三星ダイヤモンド工業株式会社 | レーザー加工装置 |
JP5646550B2 (ja) * | 2012-06-15 | 2014-12-24 | 三星ダイヤモンド工業株式会社 | 被加工物の加工方法、被加工物の分割方法およびレーザー加工装置 |
JP2015201585A (ja) * | 2014-04-10 | 2015-11-12 | 株式会社ディスコ | ウェーハの加工方法 |
US10494713B2 (en) * | 2015-04-16 | 2019-12-03 | Ii-Vi Incorporated | Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio |
US10809393B2 (en) * | 2015-04-23 | 2020-10-20 | Fermi Research Alliance, Llc | Monocrystal-based microchannel plate image intensifier |
US11869810B2 (en) | 2017-04-20 | 2024-01-09 | Siltectra Gmbh | Method for reducing the thickness of solid-state layers provided with components |
KR20210100895A (ko) * | 2020-02-07 | 2021-08-18 | 주식회사 엘지에너지솔루션 | 레이저를 이용한 클리닝 단계를 포함하는 전극 제조방법, 상기 방법으로 제조된 전극 및 이를 포함하는 이차전지 |
CN113752401B (zh) * | 2020-06-05 | 2024-02-02 | 东莞市中科汇珠半导体有限公司 | 提高SiC晶圆平整度的方法 |
CN112518108A (zh) * | 2020-12-21 | 2021-03-19 | 哈雷星激光科技有限公司 | 一种用于管材精准定位切割的光纤激光切割机 |
JP2023007772A (ja) * | 2021-07-02 | 2023-01-19 | 国立大学法人埼玉大学 | ダイヤモンド基板製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6211488B1 (en) * | 1998-12-01 | 2001-04-03 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe |
JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
JP3616872B2 (ja) * | 2000-09-14 | 2005-02-02 | 住友電気工業株式会社 | ダイヤモンドウエハのチップ化方法 |
JP4251054B2 (ja) * | 2003-10-01 | 2009-04-08 | 株式会社デンソー | 半導体装置の製造方法 |
-
2003
- 2003-09-11 JP JP2003320121A patent/JP2005086175A/ja active Pending
-
2004
- 2004-09-09 US US10/571,594 patent/US20070252154A1/en not_active Abandoned
- 2004-09-09 WO PCT/JP2004/013166 patent/WO2005027213A1/ja active Application Filing
- 2004-09-10 TW TW093127371A patent/TW200520076A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20070252154A1 (en) | 2007-11-01 |
WO2005027213A1 (ja) | 2005-03-24 |
JP2005086175A (ja) | 2005-03-31 |
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