TW200518831A - Production of insulating film with low dielectric constant - Google Patents

Production of insulating film with low dielectric constant

Info

Publication number
TW200518831A
TW200518831A TW093128261A TW93128261A TW200518831A TW 200518831 A TW200518831 A TW 200518831A TW 093128261 A TW093128261 A TW 093128261A TW 93128261 A TW93128261 A TW 93128261A TW 200518831 A TW200518831 A TW 200518831A
Authority
TW
Taiwan
Prior art keywords
insulating film
dielectric constant
reaction chamber
production
low dielectric
Prior art date
Application number
TW093128261A
Other languages
English (en)
Other versions
TWI369244B (zh
Inventor
Masaru Sasaki
Satohiko Hoshino
Shinji Ide
Yusaku Kashiwagi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003325010A external-priority patent/JP4267994B2/ja
Priority claimed from JP2003410795A external-priority patent/JP2005175085A/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200518831A publication Critical patent/TW200518831A/zh
Application granted granted Critical
Publication of TWI369244B publication Critical patent/TWI369244B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
TW093128261A 2003-09-17 2004-09-17 Production of insulating film with low dielectric constant TW200518831A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003325010A JP4267994B2 (ja) 2003-09-17 2003-09-17 半導体装置の低誘電率絶縁膜形成方法および低誘電率絶縁膜形成制御方法
JP2003410795A JP2005175085A (ja) 2003-12-09 2003-12-09 半導体装置の低誘電率絶縁膜形成方法、半導体装置および低誘電率絶縁膜形成装置

Publications (2)

Publication Number Publication Date
TW200518831A true TW200518831A (en) 2005-06-16
TWI369244B TWI369244B (zh) 2012-08-01

Family

ID=34380311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128261A TW200518831A (en) 2003-09-17 2004-09-17 Production of insulating film with low dielectric constant

Country Status (5)

Country Link
US (2) US7645481B2 (zh)
EP (1) EP1670049A4 (zh)
KR (1) KR100887449B1 (zh)
TW (1) TW200518831A (zh)
WO (1) WO2005029565A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) * 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
JP3967253B2 (ja) * 2002-11-08 2007-08-29 東京エレクトロン株式会社 多孔質絶縁膜の形成方法及び多孔質絶縁膜の形成装置
US7645481B2 (en) * 2003-09-17 2010-01-12 Tokyo Electron Limited Fabrication of low dielectric constant insulating film
KR100933374B1 (ko) * 2006-01-13 2009-12-22 도쿄엘렉트론가부시키가이샤 다공질 막의 성막 방법 및 컴퓨터 판독가능한 기록 매체
JP2012004401A (ja) 2010-06-18 2012-01-05 Fujitsu Semiconductor Ltd 半導体装置の製造方法
TWI451495B (zh) * 2010-12-13 2014-09-01 Univ Nat Taiwan 以鹼式法製造低介電係數層之方法
DE102010054858C5 (de) 2010-12-17 2024-04-11 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh Verfahren und Vorrichtung zur Herstellung einer reflexionsmindernden Beschichtung
US20230103933A1 (en) * 2020-03-31 2023-04-06 Versum Materials Us, Llc New precursors for depositing films with elastic modulus

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01198481A (ja) * 1988-02-01 1989-08-10 Canon Inc マイクロ波プラズマｃｖｄ法による堆積膜形成法
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
JP3630831B2 (ja) * 1995-04-03 2005-03-23 キヤノン株式会社 堆積膜の形成方法
US5955382A (en) * 1995-10-30 1999-09-21 Kabushiki Kaisha Toshiba Microwave excitation plasma processing apparatus and microwave excitation plasma processing method
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
JP3248492B2 (ja) * 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
JP3837937B2 (ja) * 1998-09-28 2006-10-25 セイコーエプソン株式会社 薄膜半導体装置の製造方法
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
JP3888794B2 (ja) 1999-01-27 2007-03-07 松下電器産業株式会社 多孔質膜の形成方法、配線構造体及びその形成方法
JP2003503849A (ja) * 1999-06-26 2003-01-28 トリコン ホールディングス リミティド 基材上にフィルムを形成する方法及び装置
EP1077274A1 (en) * 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6949450B2 (en) * 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
KR100746120B1 (ko) 2001-01-22 2007-08-13 동경 엘렉트론 주식회사 반도체 디바이스의 제조 방법, 플라즈마 처리 방법, 및게이트 절연막 형성 방법
US6632478B2 (en) * 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
US20020142104A1 (en) * 2001-03-28 2002-10-03 Applied Materials, Inc. Plasma treatment of organosilicate layers
JP2003179050A (ja) 2001-09-25 2003-06-27 Jsr Corp 膜形成方法、絶縁膜ならびに半導体用基板
US6890605B2 (en) * 2001-09-25 2005-05-10 Jsr Corporation Method of film formation, insulating film, and substrate for semiconductor
AU2002367179A1 (en) * 2001-12-26 2003-07-15 Tokyo Electron Limited Substrate treating method and production method for semiconductor device
JP3845061B2 (ja) * 2002-10-24 2006-11-15 株式会社半導体プロセス研究所 半導体装置及びその製造方法
JP2004152794A (ja) * 2002-10-28 2004-05-27 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜の形成装置
JP3967253B2 (ja) * 2002-11-08 2007-08-29 東京エレクトロン株式会社 多孔質絶縁膜の形成方法及び多孔質絶縁膜の形成装置
JP4413556B2 (ja) * 2003-08-15 2010-02-10 東京エレクトロン株式会社 成膜方法、半導体装置の製造方法
US7645481B2 (en) * 2003-09-17 2010-01-12 Tokyo Electron Limited Fabrication of low dielectric constant insulating film

Also Published As

Publication number Publication date
WO2005029565A1 (ja) 2005-03-31
US7645481B2 (en) 2010-01-12
TWI369244B (zh) 2012-08-01
EP1670049A4 (en) 2008-06-04
KR20060066114A (ko) 2006-06-15
EP1670049A1 (en) 2006-06-14
US20070098890A1 (en) 2007-05-03
KR100887449B1 (ko) 2009-03-10
US20100132613A1 (en) 2010-06-03

Similar Documents

Publication Publication Date Title
IL170926A0 (en) Antenna for producing uniform process rates
KR101475416B1 (ko) 플라즈마로부터 증착에 의하여 막을 형성하는 방법
US7745346B2 (en) Method for improving process control and film conformality of PECVD film
TW200629336A (en) Semiconductor plasma-processing apparatus and method
US20040086434A1 (en) Apparatus and method for treating objects with radicals generated from plasma
TW200600605A (en) Liquid precursors for the CVD deposition of amorphous carbon films
TW200518831A (en) Production of insulating film with low dielectric constant
JPS6424094A (en) Synthesizing apparatus for diamond
TW200727343A (en) Plasma treatment device and control method thereof
TW200739686A (en) Method for seed film formation, plasma film forming apparatus, and memory medium
TW200630505A (en) Apparatus for producing carbon film and production method therefor
Jiaojiao et al. Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50 kHz/33 MHz dual-frequency atmospheric-pressure plasma jet
JPWO2006043433A1 (ja) プラズマｃｖｄ装置
KR20150125942A (ko) 탄소막 형성 방법 및 탄소막
Bogdanov et al. Study of microwave discharge at high power density conditions in diamond chemical vapor deposition reactor by optical emission spectroscopy
Yamada et al. Numerical microwave plasma discharge study for the growth of large single-crystal diamond
EP1982348A1 (en) Short pulse atmospheric pressure glow discharge method and apparatus
EP1919264A1 (en) Device for forming a film by deposition from a plasma
TW200729336A (en) Method and system for forming a nitrided germanium-containing layer using plasma processing
Pelletier et al. Chemical vapor deposition in high-density low-pressure plasmas: reactor scale-up and performance
Zhang et al. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition
JP2015175019A (ja) 皮膜形成装置、皮膜形成方法、及び皮膜付筒部材
KR20160091326A (ko) 질화 실리콘막, 이의 제조방법, 및 이의 제조장치
US4701379A (en) Boron hydride polymer coated substrates
Ricard et al. Active species densities in R/x% N2 and R/x%(N2-5% H2)(R= Ar or He) microwave early afterglows

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees