TW200515666A - Laser diode module, laser apparatus and laser processing apparatus - Google Patents

Laser diode module, laser apparatus and laser processing apparatus

Info

Publication number
TW200515666A
TW200515666A TW093129282A TW93129282A TW200515666A TW 200515666 A TW200515666 A TW 200515666A TW 093129282 A TW093129282 A TW 093129282A TW 93129282 A TW93129282 A TW 93129282A TW 200515666 A TW200515666 A TW 200515666A
Authority
TW
Taiwan
Prior art keywords
laser
electrode
diode module
processing apparatus
coil electrode
Prior art date
Application number
TW093129282A
Other languages
English (en)
Inventor
Hikaru Kouta
Hisaya Takahashi
Hideyuki Ono
Yuuzou Ikeda
Masaki Tunekane
Toshinori Ishida
Keiichi Kubota
Original Assignee
Laserfront Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laserfront Technologies Inc filed Critical Laserfront Technologies Inc
Publication of TW200515666A publication Critical patent/TW200515666A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW093129282A 2003-09-29 2004-09-27 Laser diode module, laser apparatus and laser processing apparatus TW200515666A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003336594A JP4037815B2 (ja) 2003-09-29 2003-09-29 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置

Publications (1)

Publication Number Publication Date
TW200515666A true TW200515666A (en) 2005-05-01

Family

ID=34191541

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129282A TW200515666A (en) 2003-09-29 2004-09-27 Laser diode module, laser apparatus and laser processing apparatus

Country Status (7)

Country Link
US (1) US7154926B2 (zh)
EP (1) EP1519458B1 (zh)
JP (1) JP4037815B2 (zh)
KR (1) KR20050031428A (zh)
CN (1) CN1604410A (zh)
DE (1) DE602004003196T2 (zh)
TW (1) TW200515666A (zh)

Cited By (3)

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TWI411183B (zh) * 2009-05-12 2013-10-01 Mitsubishi Electric Corp 雷射二極體元件
TWI558946B (zh) * 2014-12-10 2016-11-21 鄭博文 光源系統
TWI729421B (zh) * 2018-06-21 2021-06-01 美商創浦光子學股份有限公司 二極體雷射器配置以及製造二極體雷射器配置之方法

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JP4600733B2 (ja) * 2004-07-12 2010-12-15 ソニー株式会社 半導体レーザ装置およびその製造方法
JP4659564B2 (ja) * 2005-09-02 2011-03-30 浜松ホトニクス株式会社 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法
US20070115617A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Modular assembly utilizing laser diode subassemblies with winged mounting blocks
US7436868B2 (en) * 2005-11-22 2008-10-14 Nlight Photonics Corporation Modular diode laser assembly
US7420996B2 (en) * 2005-11-22 2008-09-02 Nlight Photonics Corporation Modular diode laser assembly
US7586963B2 (en) * 2005-11-22 2009-09-08 Nlight Photonics Corporation Modular diode laser assembly
US7443895B2 (en) * 2005-11-22 2008-10-28 Nlight Photonics Corporation Modular diode laser assembly
WO2008105064A1 (ja) * 2007-02-27 2008-09-04 Hamamatsu Photonics K.K. 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法
JP2009076730A (ja) * 2007-09-21 2009-04-09 Sharp Corp 窒化物半導体レーザ装置
DE102007062044A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung
DE102009026413A1 (de) * 2009-05-22 2010-11-25 Robert Bosch Gmbh Halbleiterlasermodul und Herstellungsverfahren hierfür
JP5218657B2 (ja) * 2009-06-15 2013-06-26 富士通オプティカルコンポーネンツ株式会社 光モジュール
DE102009045181B4 (de) * 2009-09-30 2020-07-09 Infineon Technologies Ag Leistungshalbleitermodul
US8509036B2 (en) * 2010-12-09 2013-08-13 Tdk Corporation Method of burn-in testing for thermally assisted head
RU2455739C2 (ru) * 2010-03-19 2012-07-10 Владимир Александрович Филоненко Линейка лазерных диодов
DE102010042087A1 (de) * 2010-10-06 2012-04-12 Jenoptik Laser Gmbh Lasermodul mit einer Laserdiodeneinheit und einem Kühler
DE102011009018A1 (de) * 2011-01-20 2012-08-09 Betewis GmbH Klemmtechnik für horizontale Montage von Laser-Dioden-Barren
WO2012150926A1 (en) * 2011-05-02 2012-11-08 Ipg Photonics Corporation Laser-based marking method and apparatus
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
US8681829B2 (en) * 2011-08-29 2014-03-25 Intellectual Light, Inc. Compression mount for semiconductor devices, and method
CN102570291B (zh) * 2011-12-20 2014-10-08 西安炬光科技有限公司 一种传导制冷型高功率半导体激光器及其制备方法
CN103203565B (zh) * 2012-01-12 2016-02-03 郑州大学 用于大功率半导体激光器列阵及叠阵的耐高温焊料
US8866041B2 (en) * 2012-04-12 2014-10-21 Tdk Corporation Apparatus and method of manufacturing laser diode unit utilizing submount bar
US8483249B1 (en) * 2012-04-16 2013-07-09 Coherent, Inc. Diode-laser bar package
CN102709807A (zh) * 2012-04-18 2012-10-03 徐靖中 以SiC晶片作为一级热沉的单发射腔半导体激光器
US8804781B2 (en) 2012-10-29 2014-08-12 Coherent, Inc. Macro channel water-cooled heat-sink for diode-laser bars
US8804782B2 (en) 2012-10-29 2014-08-12 Coherent, Inc. Macro-channel water-cooled heat-sink for diode-laser bars
US9001856B1 (en) * 2014-03-20 2015-04-07 Coherent, Inc. Diode laser bar mounted on a copper heat-sink
RU170831U1 (ru) * 2014-03-31 2017-05-11 Айпиджи Фотоникс Корпорэйшн Способ корпусирования лазерного диода высокой мощности и лазерный диодный модуль
US10431955B2 (en) * 2014-04-25 2019-10-01 Lmd Power Of Light Corp Laser core having conductive mass electrical connection
DE102014018821B4 (de) * 2014-12-19 2019-07-25 Jenoptik Optical Systems Gmbh Diodenlaserbefestigung
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US9843164B2 (en) 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
US10297976B2 (en) * 2015-05-19 2019-05-21 Ii-Vi Laser Enterprise Gmbh Low thermal resistance, stress-controlled diode laser assemblies
JP6576137B2 (ja) * 2015-07-21 2019-09-18 浜松ホトニクス株式会社 半導体レーザ装置及び半導体レーザ装置の製造方法
CN105576489A (zh) * 2016-02-22 2016-05-11 西安炬光科技股份有限公司 一种新型模块化的半导体激光器侧泵模块
JP2018113377A (ja) * 2017-01-12 2018-07-19 三菱電機株式会社 レーザー光源装置
JP2018200924A (ja) * 2017-05-25 2018-12-20 富士通株式会社 光モジュール
JP2020523793A (ja) * 2017-06-13 2020-08-06 ヌブル インク 超高密度波長ビーム結合レーザシステム
EP3651292B1 (en) * 2017-07-07 2021-06-23 Panasonic Intellectual Property Management Co., Ltd. Semiconductor laser device
WO2019094314A1 (en) * 2017-11-07 2019-05-16 Dermal Photonics Corporation Self-aligning laser assembly
CN107800028A (zh) * 2017-11-28 2018-03-13 武汉锐科光纤激光技术股份有限公司 一种针对高功率泵浦源的冷却结构
JP7205490B2 (ja) * 2017-12-13 2023-01-17 ソニーグループ株式会社 発光モジュールの製造方法
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CN113208253B (zh) * 2021-04-30 2023-12-19 深圳市中诺通讯有限公司 一种保护套和保护套控制数码产品的方法
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Publication number Priority date Publication date Assignee Title
TWI411183B (zh) * 2009-05-12 2013-10-01 Mitsubishi Electric Corp 雷射二極體元件
TWI558946B (zh) * 2014-12-10 2016-11-21 鄭博文 光源系統
TWI729421B (zh) * 2018-06-21 2021-06-01 美商創浦光子學股份有限公司 二極體雷射器配置以及製造二極體雷射器配置之方法
US11824324B2 (en) 2018-06-21 2023-11-21 Trumpf Photonics, Inc. Diode laser arrangement and method for producing a diode laser arrangement

Also Published As

Publication number Publication date
KR20050031428A (ko) 2005-04-06
US20050069266A1 (en) 2005-03-31
US7154926B2 (en) 2006-12-26
EP1519458B1 (en) 2006-11-15
DE602004003196T2 (de) 2007-09-27
EP1519458A3 (en) 2005-06-22
CN1604410A (zh) 2005-04-06
JP4037815B2 (ja) 2008-01-23
JP2005108907A (ja) 2005-04-21
EP1519458A2 (en) 2005-03-30
DE602004003196D1 (de) 2006-12-28

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