TW200729546A - Nitride semiconductor light emitting device and production method thereof - Google Patents

Nitride semiconductor light emitting device and production method thereof

Info

Publication number
TW200729546A
TW200729546A TW095132937A TW95132937A TW200729546A TW 200729546 A TW200729546 A TW 200729546A TW 095132937 A TW095132937 A TW 095132937A TW 95132937 A TW95132937 A TW 95132937A TW 200729546 A TW200729546 A TW 200729546A
Authority
TW
Taiwan
Prior art keywords
layer
nitride semiconductor
light emitting
semiconductor light
emitting device
Prior art date
Application number
TW095132937A
Other languages
Chinese (zh)
Other versions
TWI329371B (en
Inventor
Hiroshi Osawa
Takashi Hodota
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200729546A publication Critical patent/TW200729546A/en
Application granted granted Critical
Publication of TWI329371B publication Critical patent/TWI329371B/en

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.
TW095132937A 2005-09-13 2006-09-06 Nitride semiconductor light emitting device and production method thereof TWI329371B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005265300 2005-09-13
US71873805P 2005-09-21 2005-09-21
JP2005312819A JP4202353B2 (en) 2005-09-13 2005-10-27 Nitride-based semiconductor light-emitting device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200729546A true TW200729546A (en) 2007-08-01
TWI329371B TWI329371B (en) 2010-08-21

Family

ID=38035656

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132937A TWI329371B (en) 2005-09-13 2006-09-06 Nitride semiconductor light emitting device and production method thereof

Country Status (2)

Country Link
JP (1) JP4202353B2 (en)
TW (1) TWI329371B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460854B (en) * 2008-03-26 2014-11-11 Univ Tokyo Semiconductor substrate, method for manufacturing semiconductor substrate and semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8318519B2 (en) * 2005-01-11 2012-11-27 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
JP2009099675A (en) * 2007-10-15 2009-05-07 Showa Denko Kk Method of manufacturing light emitting diode, light emitting diode, and lamp
KR100946523B1 (en) 2008-04-24 2010-03-11 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP4940363B1 (en) * 2011-02-28 2012-05-30 株式会社東芝 Semiconductor light emitting device and semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460854B (en) * 2008-03-26 2014-11-11 Univ Tokyo Semiconductor substrate, method for manufacturing semiconductor substrate and semiconductor device

Also Published As

Publication number Publication date
TWI329371B (en) 2010-08-21
JP2007110056A (en) 2007-04-26
JP4202353B2 (en) 2008-12-24

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