WO2008105064A1 - 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法 - Google Patents

半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法 Download PDF

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Publication number
WO2008105064A1
WO2008105064A1 PCT/JP2007/053609 JP2007053609W WO2008105064A1 WO 2008105064 A1 WO2008105064 A1 WO 2008105064A1 JP 2007053609 W JP2007053609 W JP 2007053609W WO 2008105064 A1 WO2008105064 A1 WO 2008105064A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser module
submount
manufacture
stack
Prior art date
Application number
PCT/JP2007/053609
Other languages
English (en)
French (fr)
Inventor
Hirofumi Kan
Hirofumi Miyajima
Nobuto Kageyama
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to PCT/JP2007/053609 priority Critical patent/WO2008105064A1/ja
Publication of WO2008105064A1 publication Critical patent/WO2008105064A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02492—CuW heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

半導体レーザモジュールは、サブマウント９と、サブマウント９上に設けられた半導体レーザ素子５と、半導体レーザ素子５上に設けられたサブマウント３とを備え、半導体レーザ素子５は、サブマウント９に面している表層に設けられた活性層１１ａを有し、サブマウント９の方がサブマウント３よりも熱膨張係数が大きい。
PCT/JP2007/053609 2007-02-27 2007-02-27 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法 WO2008105064A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053609 WO2008105064A1 (ja) 2007-02-27 2007-02-27 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053609 WO2008105064A1 (ja) 2007-02-27 2007-02-27 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法

Publications (1)

Publication Number Publication Date
WO2008105064A1 true WO2008105064A1 (ja) 2008-09-04

Family

ID=39720910

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053609 WO2008105064A1 (ja) 2007-02-27 2007-02-27 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法

Country Status (1)

Country Link
WO (1) WO2008105064A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073549A (ja) * 2005-09-02 2007-03-22 Hamamatsu Photonics Kk 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法
WO2016185274A1 (en) * 2015-05-19 2016-11-24 Ii-Vi Laser Enterprise Gmbh Low thermal resistance, stress-controlled diode laser assemblies

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163467A (ja) * 1997-11-27 1999-06-18 Sony Corp 半導体素子及びその製造方法、並びにヒートシンク
JP2005108907A (ja) * 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2005268445A (ja) * 2004-03-17 2005-09-29 Hamamatsu Photonics Kk 半導体レーザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163467A (ja) * 1997-11-27 1999-06-18 Sony Corp 半導体素子及びその製造方法、並びにヒートシンク
JP2005108907A (ja) * 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2005268445A (ja) * 2004-03-17 2005-09-29 Hamamatsu Photonics Kk 半導体レーザ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073549A (ja) * 2005-09-02 2007-03-22 Hamamatsu Photonics Kk 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法
WO2016185274A1 (en) * 2015-05-19 2016-11-24 Ii-Vi Laser Enterprise Gmbh Low thermal resistance, stress-controlled diode laser assemblies
CN107810582A (zh) * 2015-05-19 2018-03-16 Ii-Vi激光股份有限公司 一种低热阻、应力受控的激光二极管组件
JP2018517287A (ja) * 2015-05-19 2018-06-28 ツー−シックス レーザー エンタープライズ ゲーエムベーハー 低熱抵抗の応力制御されたダイオードレーザアッセンブリ
US10297976B2 (en) 2015-05-19 2019-05-21 Ii-Vi Laser Enterprise Gmbh Low thermal resistance, stress-controlled diode laser assemblies

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