TW200509220A - A substrate for stressed systems and a method of crystal growth on said substrate - Google Patents

A substrate for stressed systems and a method of crystal growth on said substrate

Info

Publication number
TW200509220A
TW200509220A TW093115427A TW93115427A TW200509220A TW 200509220 A TW200509220 A TW 200509220A TW 093115427 A TW093115427 A TW 093115427A TW 93115427 A TW93115427 A TW 93115427A TW 200509220 A TW200509220 A TW 200509220A
Authority
TW
Taiwan
Prior art keywords
substrate
crystal growth
stressed systems
stressed
systems
Prior art date
Application number
TW093115427A
Other languages
English (en)
Other versions
TWI337375B (en
Inventor
Fabrice Letertre
Bruno Ghyselen
Olivier Rayssac
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of TW200509220A publication Critical patent/TW200509220A/zh
Application granted granted Critical
Publication of TWI337375B publication Critical patent/TWI337375B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00365—Creating layers of material on a substrate having low tensile stress between layers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093115427A 2003-05-30 2004-05-28 A substrate for stressed systems and a method of crystal growth on said substrate TWI337375B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0306568A FR2855650B1 (fr) 2003-05-30 2003-05-30 Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat

Publications (2)

Publication Number Publication Date
TW200509220A true TW200509220A (en) 2005-03-01
TWI337375B TWI337375B (en) 2011-02-11

Family

ID=33427565

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115427A TWI337375B (en) 2003-05-30 2004-05-28 A substrate for stressed systems and a method of crystal growth on said substrate

Country Status (8)

Country Link
US (4) US7009270B2 (zh)
EP (1) EP1629526A1 (zh)
JP (1) JP4714688B2 (zh)
KR (1) KR100742322B1 (zh)
CN (1) CN100492589C (zh)
FR (1) FR2855650B1 (zh)
TW (1) TWI337375B (zh)
WO (1) WO2004109781A1 (zh)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100627888B1 (ko) * 2004-05-25 2006-09-25 도시바세라믹스가부시키가이샤 화합물 반도체 성장용 기판, 그것을 이용한 화합물 반도체및 그들의 제조방법
KR100652442B1 (ko) * 2005-11-09 2006-12-01 삼성전자주식회사 반도체 칩 및 그 제조 방법
EP1852896A1 (en) * 2006-05-05 2007-11-07 Kinik Company Diamond substrate and method for fabricating the same
KR100832391B1 (ko) * 2007-06-27 2008-05-26 호서대학교 산학협력단 고속·고온공정에서 웨이퍼의 스트레스 측정을 위한 자동회전장치
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
KR101101780B1 (ko) * 2008-09-08 2012-01-05 서울대학교산학협력단 질화물 박막 구조 및 그 형성 방법
SG160295A1 (en) * 2008-09-29 2010-04-29 Semiconductor Energy Lab Method for manufacturing semiconductor device
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US8278193B2 (en) 2008-10-30 2012-10-02 Soitec Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
KR20100052167A (ko) * 2008-11-10 2010-05-19 삼성전자주식회사 웨이퍼 본딩 방법 및 웨이퍼 본딩 장비
JP5564799B2 (ja) * 2009-01-28 2014-08-06 住友電気工業株式会社 窒化ガリウム系半導体電子デバイスを作製する方法
FR2942911B1 (fr) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
US8187983B2 (en) * 2009-04-16 2012-05-29 Micron Technology, Inc. Methods for fabricating semiconductor components using thinning and back side laser processing
US8043938B2 (en) 2009-05-14 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and SOI substrate
US20110108854A1 (en) * 2009-11-10 2011-05-12 Chien-Min Sung Substantially lattice matched semiconductor materials and associated methods
CN102741999B (zh) * 2009-11-18 2015-07-15 Soitec公司 使用玻璃键合层制造半导体结构和器件的方法,和用所述方法形成的半导体结构和器件
KR101108574B1 (ko) * 2009-11-26 2012-01-30 페어차일드코리아반도체 주식회사 탄화규소계 반도체 소자 및 제조 방법
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
US8319470B2 (en) * 2010-02-12 2012-11-27 Suncore, Inc. Stand alone solar battery charger
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
JP5585268B2 (ja) * 2010-07-22 2014-09-10 セイコーエプソン株式会社 単結晶炭化珪素膜付き基材及び単結晶炭化珪素膜の製造方法並びに単結晶炭化珪素膜付き基材の製造方法
CN102104060B (zh) * 2010-11-15 2013-03-20 王楚雯 一种半导体结构及其形成方法
FR2973157B1 (fr) * 2011-03-25 2014-03-14 Soitec Silicon On Insulator Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
EP2863920B1 (en) 2012-06-20 2023-03-22 Eutropics Pharmaceuticals, Inc. Quinoline derivatives for use in the tratment of breast cancer
CN102956768A (zh) * 2012-10-26 2013-03-06 江苏威纳德照明科技有限公司 一种包括蓝宝石组合衬底的发光器件
CN102956771A (zh) * 2012-10-26 2013-03-06 江苏威纳德照明科技有限公司 一种包括Si组合衬底的发光器件
US20160038503A1 (en) 2012-11-21 2016-02-11 David Richard Methods and compositions useful for treating diseases involving bcl-2 family proteins with isoquinoline and quinoline derivatives
JP2014154632A (ja) * 2013-02-06 2014-08-25 Rohm Co Ltd 多層構造体、コンデンサ素子およびその製造方法
CN103117294B (zh) * 2013-02-07 2015-11-25 苏州晶湛半导体有限公司 氮化物高压器件及其制造方法
WO2015017788A1 (en) 2013-08-01 2015-02-05 Eutropics Pharmaceuticals, Inc. Method for predicting cancer sensitivity
JP6538044B2 (ja) 2013-10-30 2019-07-03 ユートロピクス ファーマシューティカルズ， インコーポレイテッド 化学療法感受性および化学毒性を判定する方法
US20150349064A1 (en) * 2014-05-06 2015-12-03 Cambridge Electronics, Inc. Nucleation and buffer layers for group iii-nitride based semiconductor devices
WO2016115105A1 (en) 2015-01-12 2016-07-21 Eutropics Pharmaceuticals, Inc. Context dependent diagnostics test for guiding cancer treatment
JP6070736B2 (ja) * 2015-02-05 2017-02-01 セイコーエプソン株式会社 半導体基板
CN107408532A (zh) * 2015-03-17 2017-11-28 太阳能爱迪生半导体有限公司 用于绝缘体上半导体结构的制造的热稳定电荷捕获层
FR3039003B1 (fr) 2015-07-17 2017-07-28 Soitec Silicon On Insulator Procede de fabrication d'un substrat
FR3045933B1 (fr) 2015-12-22 2018-02-09 Soitec Substrat pour un dispositif a ondes acoustiques de surface ou a ondes acoustiques de volume compense en temperature
ITUA20162943A1 (it) 2016-04-27 2017-10-27 Pilegrowth Tech S R L Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento.
US10739397B2 (en) * 2017-05-10 2020-08-11 International Business Machines Corporation Accelerated wafer testing using non-destructive and localized stress
JP7235456B2 (ja) 2018-08-14 2023-03-08 株式会社ディスコ 半導体基板の加工方法
CN109238518B (zh) * 2018-09-17 2021-11-05 胡耿 微小极间距电容式力敏传感器及其制造方法
CN112647055B (zh) * 2020-11-13 2021-09-24 中国科学院金属研究所 在单晶硅或多晶硅上制备碳化硅复合涂层的化学气相沉积方法
TWI785864B (zh) * 2021-10-27 2022-12-01 財團法人工業技術研究院 半導體基板以及電晶體
US11940022B2 (en) * 2022-07-15 2024-03-26 Rivian Ip Holdings, Llc Integrated disconnect for drive unit

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US611121A (en) * 1898-09-20 Grain-bagging machine
JPS62171112A (ja) * 1986-01-23 1987-07-28 Oki Electric Ind Co Ltd 半導体基体の製造方法
JPH01207920A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd ＩｎＰ半導体薄膜の製造方法
JP2691721B2 (ja) * 1988-03-04 1997-12-17 富士通株式会社 半導体薄膜の製造方法
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
JPH07277884A (ja) * 1994-04-05 1995-10-24 Mitsubishi Cable Ind Ltd 半導体用単結晶の製造方法
US5952679A (en) * 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate
JP3036495B2 (ja) * 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
FR2775121B1 (fr) * 1998-02-13 2000-05-05 Picogiga Sa Procede de fabrication de substrats en film mince de materiau semiconducteur, structures epitaxiales de materiau semiconducteur formees sur de tels substrats, et composants obtenus a partir de ces structures
US6051849A (en) * 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
WO1999044224A1 (en) * 1998-02-27 1999-09-02 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
JP2000174335A (ja) * 1998-12-03 2000-06-23 Rohm Co Ltd ＧａＮ系化合物半導体発光素子の製造方法
FR2787919B1 (fr) * 1998-12-23 2001-03-09 Thomson Csf Procede de realisation d'un substrat destine a faire croitre un compose nitrure
US6458622B1 (en) * 1999-07-06 2002-10-01 Motorola, Inc. Stress compensation composition and semiconductor component formed using the stress compensation composition
JP2001223165A (ja) * 2000-02-10 2001-08-17 Hitachi Cable Ltd 窒化物半導体及びその製造方法
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
JP2002050749A (ja) * 2000-07-31 2002-02-15 Canon Inc 複合部材の分離方法及び装置
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP2002289538A (ja) * 2001-03-27 2002-10-04 Univ Meijo 半導体素子の製造方法及び半導体素子

Also Published As

Publication number Publication date
FR2855650A1 (fr) 2004-12-03
US7405135B2 (en) 2008-07-29
US20060079070A1 (en) 2006-04-13
US20060076649A1 (en) 2006-04-13
US20060216849A1 (en) 2006-09-28
FR2855650B1 (fr) 2006-03-03
JP4714688B2 (ja) 2011-06-29
WO2004109781B1 (fr) 2005-03-17
US7163873B2 (en) 2007-01-16
CN100492589C (zh) 2009-05-27
US7009270B2 (en) 2006-03-07
CN1795538A (zh) 2006-06-28
EP1629526A1 (fr) 2006-03-01
TWI337375B (en) 2011-02-11
US20040241902A1 (en) 2004-12-02
JP2007503726A (ja) 2007-02-22
KR20060021864A (ko) 2006-03-08
WO2004109781A1 (fr) 2004-12-16
KR100742322B1 (ko) 2007-07-24
US7145214B2 (en) 2006-12-05

Similar Documents

Publication Publication Date Title
TW200509220A (en) A substrate for stressed systems and a method of crystal growth on said substrate
HK1088715A1 (en) Single crystal gallium nitride substrate, method of growing the same and method of producing the same
GB2416623B (en) Substrate of gallium nitride single crystal and process for producing the same
TW200620490A (en) Method of forming a thin film component
WO2004090201A3 (fr) Procede de fabrication de cristaux monocristallins
AU2002339906A1 (en) Method for growing low-defect single crystal heteroepitaxial films
AU2003277094A1 (en) Method and system for managing limited use coupon and coupon prioritization
AU2002361704A1 (en) Integrated crystal mounting and alignment system for high-throughput biological crystallography
GB2409468A (en) Single crystal diamond
AU2003228329A1 (en) Methods and systems for downloading and viewing maps
AU2003229196A8 (en) Ceramic thin film on various substrates, and process for producing same
AU2003201715A8 (en) Method and system for distributing geographical addresses across the surface of the earth
EP1403404A4 (en) SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME
GB2396334B (en) Slotted substrates and methods and systems for forming same
EP1892323A4 (en) METHOD OF PULLING SILICONE INCLUDING CRYSTALS, SILICON WAFERS AND SOI SUBSTRATE USING SUCH A SILICON WASHER
AU2002248363A1 (en) Substrate holder system with substrate extension apparatus and associated method
AU2002320277A1 (en) Method and apparatus for growing semiconductor crystals with a rigid support
GB2420529B (en) Slotted substrates and methods and systems for forming same
TW200632950A (en) Method to form a thin film resistor
GB0301948D0 (en) Slotted substrates and methods and systems for forming same
AU2003272882A1 (en) Silicon carbide single crystal and method and apparatus for producing the same
SG112917A1 (en) Diamond single crystal composite substrate and method for manufacturing the same
AU2003283248A8 (en) Extremely thin substrate support
AU2003230633A1 (en) Method for manufacturing microarrays based on the immobilization of porous substrates on thermally modifiable surfaces
AU2003237051A1 (en) Single crystal substrate and cutting method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees