TW200506113A - Process for producing P doped silicon single crystal and P doped N type silicon single crystal wafer - Google Patents
Process for producing P doped silicon single crystal and P doped N type silicon single crystal waferInfo
- Publication number
- TW200506113A TW200506113A TW093101045A TW93101045A TW200506113A TW 200506113 A TW200506113 A TW 200506113A TW 093101045 A TW093101045 A TW 093101045A TW 93101045 A TW93101045 A TW 93101045A TW 200506113 A TW200506113 A TW 200506113A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- silicon single
- doped
- producing
- region
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003010436A JP4207577B2 (ja) | 2003-01-17 | 2003-01-17 | Pドープシリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200506113A true TW200506113A (en) | 2005-02-16 |
TWI333002B TWI333002B (zh) | 2010-11-11 |
Family
ID=32767251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093101045A TW200506113A (en) | 2003-01-17 | 2004-01-15 | Process for producing P doped silicon single crystal and P doped N type silicon single crystal wafer |
Country Status (6)
Country | Link |
---|---|
US (1) | US7214268B2 (zh) |
EP (1) | EP1591566B8 (zh) |
JP (1) | JP4207577B2 (zh) |
KR (1) | KR101029141B1 (zh) |
TW (1) | TW200506113A (zh) |
WO (1) | WO2004065666A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200428637A (en) * | 2003-01-23 | 2004-12-16 | Shinetsu Handotai Kk | SOI wafer and production method thereof |
JP4854917B2 (ja) * | 2003-03-18 | 2012-01-18 | 信越半導体株式会社 | Soiウェーハ及びその製造方法 |
JP4432458B2 (ja) * | 2003-10-30 | 2010-03-17 | 信越半導体株式会社 | 単結晶の製造方法 |
DE102004039197B4 (de) | 2004-08-12 | 2010-06-17 | Siltronic Ag | Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
JP5167654B2 (ja) * | 2007-02-26 | 2013-03-21 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法 |
JP5003283B2 (ja) * | 2007-05-23 | 2012-08-15 | 信越半導体株式会社 | シリコン単結晶の引上げ方法 |
JP6107308B2 (ja) * | 2013-03-28 | 2017-04-05 | 信越半導体株式会社 | シリコン単結晶製造方法 |
JP7463934B2 (ja) | 2020-10-07 | 2024-04-09 | 信越半導体株式会社 | N型シリコン単結晶ウェーハの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0741390A (ja) * | 1993-07-29 | 1995-02-10 | Nippon Steel Corp | シリコンの熱処理方法 |
JP3195889B2 (ja) * | 1994-07-06 | 2001-08-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び石英ガラスルツボ |
JP3525141B2 (ja) * | 1997-08-20 | 2004-05-10 | 独立行政法人 科学技術振興機構 | 抵抗率が低いn型又はp型金属シリコンの製造方法 |
JP3412531B2 (ja) * | 1998-08-31 | 2003-06-03 | 信越半導体株式会社 | リンドープシリコン単結晶ウエーハ及びエピタキシャルシリコンウエーハ及びこれらの製造方法 |
JP3601328B2 (ja) | 1998-12-14 | 2004-12-15 | 信越半導体株式会社 | シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ |
JP4634553B2 (ja) * | 1999-06-08 | 2011-02-16 | シルトロニック・ジャパン株式会社 | シリコン単結晶ウエーハおよびその製造方法 |
-
2003
- 2003-01-17 JP JP2003010436A patent/JP4207577B2/ja not_active Expired - Fee Related
- 2003-12-25 EP EP03768274.7A patent/EP1591566B8/en not_active Expired - Lifetime
- 2003-12-25 US US10/538,878 patent/US7214268B2/en not_active Expired - Lifetime
- 2003-12-25 WO PCT/JP2003/016794 patent/WO2004065666A1/ja active Application Filing
- 2003-12-25 KR KR1020057013007A patent/KR101029141B1/ko active IP Right Grant
-
2004
- 2004-01-15 TW TW093101045A patent/TW200506113A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1591566A1 (en) | 2005-11-02 |
EP1591566B8 (en) | 2015-11-18 |
JP2004224577A (ja) | 2004-08-12 |
US20060065184A1 (en) | 2006-03-30 |
KR20050091783A (ko) | 2005-09-15 |
EP1591566A4 (en) | 2012-04-25 |
KR101029141B1 (ko) | 2011-04-13 |
EP1591566B1 (en) | 2015-10-14 |
TWI333002B (zh) | 2010-11-11 |
WO2004065666A1 (ja) | 2004-08-05 |
JP4207577B2 (ja) | 2009-01-14 |
US7214268B2 (en) | 2007-05-08 |
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