TW200422375A - Luminescent material, preferably for LED application - Google Patents

Luminescent material, preferably for LED application Download PDF

Info

Publication number
TW200422375A
TW200422375A TW092126178A TW92126178A TW200422375A TW 200422375 A TW200422375 A TW 200422375A TW 092126178 A TW092126178 A TW 092126178A TW 92126178 A TW92126178 A TW 92126178A TW 200422375 A TW200422375 A TW 200422375A
Authority
TW
Taiwan
Prior art keywords
light
patent application
scope
item
material according
Prior art date
Application number
TW092126178A
Other languages
English (en)
Other versions
TWI287566B (en
Inventor
Hubertus T Hintzen
Yuan-Qiang Li
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200422375A publication Critical patent/TW200422375A/zh
Application granted granted Critical
Publication of TWI287566B publication Critical patent/TWI287566B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/6265—Thermal treatment of powders or mixtures thereof other than sintering involving reduction or oxidation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3213—Strontium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3215—Barium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C04B2235/322—Transition aluminas, e.g. delta or gamma aluminas
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442—Carbonates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Description

200422375 玖、發明說明： (一） 發明所屬之技術領域 本發明係關於一種可在光譜區域的uv -藍光部分中激 發之發光材料；更特別的是，其不但是專門針對光源用之 磷光劑，較佳爲其用於發光二極體（LED)。該磷光劑的類別 屬於經稀土活化的氧氮化矽類。 (二） 先前技術 至今，白光LED已藉由將發藍光的二極體與發黃光磷 光劑結合而達成。此一組合具有差的色彩重現性，但是， 其可藉由使用一紅光-綠光-藍光系統（RGB)而明顯地改善。 此系統使用例如一紅光及藍光發光器與一發綠光的鋁酸鹽 磷光劑（如SrAl 204 : Eu或BaAl 204 : Eu，其可將Μη加入至 Eu，其發光最大値在約520奈米處）組合，參見US-A 6 278 1 3 5。但是，這些鋁酸鹽的激發位置及發射帶並非最理想。 它們必需由範圍在3 30至400奈米的短UV激發。 新穎引入注意的發光材料爲摻雜Eu2 +的α_塞隆（s i a 1 on) 材料。它們具有+ + 結構，其中Μ爲
Ca或γ或稀土金屬。t値則以m/val+提供，其中val+爲離 子Μ的價電荷。例如，M = Sr2 +的val+値爲2。因此，可完全 補償整個結構的電荷。更詳細的細節可參見例如”摻雜Tb、 C e或E u的α-塞隆材料之發光性質π，由〗·凡克瑞弗（v a η Krevel)等人，J. Sol. St. Chem·， 2002 年 4 月，ρ.19-24 ; 及亦可參見n共摻雜Ca及稀土金屬的α-塞隆陶瓷之製備及 發光光譜·，，由R.-J·夕（Xie)等人在J· A. Ceram· Soc. 200422375 2002，ρ·1 229 - 1 2 34，2002 年 5 月；及進一步在 US-Pub 2002 / 0043 9 26中，此些參考資料全部關於α—塞隆型式的ca- 塞隆。此時並不熟知其它型式的塞隆。 (三）發明內容 本發明之目的在於提供一種如申請專利範圍第1項之 前言的新穎發光材料。進一步目的在於提供一種具有經細 微調諧的發光之磷光劑，其可有效率地由UV /藍光輻射激 發。再進一步目的爲提供一種磷光劑，其可與至少一種LED 使用在照明裝置中作爲光源，該LED會發射範圍從3 6 0至4 7 0 奈米的一級輻射，此輻射可藉由已曝露至來自LED的一級 輻射之磷光劑而部分或完全轉換成波長較長的輻射。又進 一步目的爲提供一種可發射白光，特別是具有高彩色表現 的照明裝置。仍進一步目的爲提供一種如LED裝置般高效 率的照明裝置，其在3 6 0至470奈米的範圍有良好的吸收 且容易製造。 這些目的可各別藉由申請專利範圍第1及1 0項所表明 的特徵而達成。特別優良的結構則提供在相依的申請專利 範圍中。 該轉換至少可藉由氧氮化物磷光劑（其源自於經Eu活 化或經Eu，Μη共活化的鋁酸鹽種類）的輔助而達成。更詳細 的是，先述技藝之缺點可藉由將氮摻入MA104: Eu(M = Ca、Sr、 B a )中而克服，此可產生一氧氮化物磷光劑，通常且較佳地 維持該鱗矽石結構。但是並不排除其它結構。更特別的是， (A10) +部分由（SiN) +置換而提供一共通組成：MAl2_xSix04. 200422375 XNX ·· (Eu 或 Eu，Mn )。x 値設定爲 〇〇· 0〇2 且至多 X=1 · 5。與 先前提及之先述技藝的α-塞隆型式結構（其來自氮化物 s i…4)比較’於本文之結構更像衍生自s丨〇2改質的氧化物， 更特別佳的是衍生自鱗矽石結構。 •比較上’ α-塞隆材料顯示出一種所謂的氮化物結構， 換句話說它們以S i 3Ν4爲主而有部分S i - Ν由A 1 - 0及/或由 A1-N置換。追些不同的結構會造成不同的發光行爲，因爲 在α -塞隆及鱗砂石中可能的活化位置在與週圍離子的局部 交互作用中強烈地不同。 在Ca作爲 Μ的主要組分之實例中，較佳的値爲 O.Ol^x^O.l。在Ba或Si.作爲Μ的主要組分之實例中，較 佳的値爲0 · 1 · 7。氮之摻入可增加共價鍵結及配位場 分裂的程度。因此，此可導致激發及發射帶偏移至較長的 波長（與氧化物晶格比較）。所獲得的磷光劑顯示出具有高 化學及熱穩定性。全部相關性質之更擴大的細微調諧可藉 由使用陽離子Μ而獲得，此可藉由結合數種Μ金屬（特別是 Sr及Ba)，藉由進一步內含Ζη作爲部分的陽離子Μ(較佳爲 10-40莫耳％)，及/或$丨至少部分由〇6置換（較佳爲5-25 莫耳％)及/或Α1由Ga置換（較佳爲5-25莫耳％)而達成。較 佳的是，對發射綠光的材料來說，該金屬Μ主要爲Ba及/ 或Sr，且對發射藍光的材料來說主要爲Ca。摻雜至陽離子 Μ的Eu量在Μ的0.1至25%間，較佳爲在2至15%之間。 此外，當進一步摻雜Μη來細微調諧相關聯的性質時’其可 能的摻雜量較佳爲至多Eu的50%。 200422375 因爲這些材料可將uv-藍光輻射轉換成藍-綠光（由於 低能量激發帶），它們可例如應用在白光光源（例如燈）中， 特別是以主要發射藍光的LED(典型爲可發射約43 0至470 奈米的G a N或I n g a N )與發射紅光的磷光劑之結合爲主的光 源。合適的發射紅光之磷光劑爲摻雜Eu的氮化矽材料，如 M2Si5N8(M = Ca、Sr、Ba)，參見例如 WO 01/40403。亦可應 用於有顏色的光源。 (四）實施方式 以實例說明之，本文描述一類似於在WO 0 1 / 40403中 所使用的結構，將其使用在與InGaN晶片一起的白光LED 中。此一白光光源的結構特別顯示在第1 a圖中。該光源以 InGaN型式的半導體構件（晶片丨）爲主，其具有400奈米的 波峰發射波長且具有第一及第二電連接2，3，其埋入一不透 明的基礎外罩8之凹處區域9中。連接3之一經由連結電 線4連接至晶片1。該凹處具有邊壁7，其提供作爲晶片丄 之藍光一級輻射的反射器。以封裝化合物5塡充該凹處9， 該化合物包含一矽酮鑄模樹脂（或環氧鑄模樹脂）作爲其主 要組分（較佳爲多於80重量％)，且進一步包含磷光顏料6(較 佳爲少於1 5重量％ )。尤其是，亦更含有小量的甲基醚及氣 相二氧化矽。該磷光顏料爲三種顏料（其可發射藍光、綠光 及紅光，而該綠色磷光劑乃根據本發明）之混合物。 第lb圖顯示出一具有半導體構件i〇的光源之具體實 施例，其中該轉換成白光可藉由直接塗佈至各別晶片的磷 光劑轉換層丨6而實現。在基材11之頂端上，有一接觸層12、 一 8 - 200422375 一鏡子1 3、一 LED晶片14、一濾光器15及一隣光劑層16, 該憐光劑層可藉由該LED的一級輻射激發而將該一級輻射 轉換成可看見的長波輻射。此結構單位由塑膠鏡片1 7包圍。 僅闡明該二歐姆接觸的上接觸器1 8。該LED的一級UV輻射 約4 0 0奈米，而二級輻射則由根據本發明的M (i 。> A 12. xSi X04.XNX : D。第一磷光劑發射，D爲Eu或Eu，Mn。特別佳 的是使用BaAl2.xSix04.xNx: (10%)Eu2+，其發射約525奈米 (或在調諧的一般式語言中，c = 0. 1及D = Eu)，且第二磷光 劑可使用發射橙-紅光的次氮基矽酸鹽。 第2圖顯示出一照明裝置20。其包含一共同載體21， 其黏著性地黏結至一立方體外罩2 2。其上邊提供一共同遮 蓋物2 3。該立方體外罩具有一些可各別容納半導體構件24 的切口。它們爲可發射藍光的發光二極體，其具有約450 至470奈米的發射波峰。該轉換成白光可經由安排在全部 表面上之易受藍光輻射影響的轉換層25而發生。這些包括 該外罩、遮蓋物及載體的側壁之內部表面。該些轉換層25 由可在紅光光譜區域中發射的磷光劑與使用根據本發明在 綠光光譜區域的磷光劑所組成，且與不吸收一級輻射藍光 的部分一起主要混合成白光。 使用 Eu203 (純度 99.99%)、BaC03(純度 >99.0%)、 SrC03(純度 >99.0%)、CaC03(純度〉99.0%)、Al2〇3(純度 99.9%)、3丨02及Si3N4f爲商業上可購得的起始材料，用來 製造本發明之新穎的磷光劑。利用行星式球磨機，將該些 原始材料在異丙醇中，以適當的量均相溼式混合4 - 5小時。 200422375 在混合後，在火爐中乾燥該混合物且在瑪瑙硏缽中硏磨。 隨後，在1100-1400 °c之還原氮/氫大氣氛下，於水平管爐 中，在鉬坩堝內燒製該些粉末。在燒製後，利用粉末X -射 線繞射（銅K - α線）標出該些材料的特徵。 全部的樣品皆顯示出在UV -藍光之激發下有有效率的 發光，其在藍光（在M = Ca的實例中）中具有最大發射，特別 是435至445奈米；或綠光（對M = Sr或Ba來說），特別是 在Ba的實例中爲495至530奈米，及在Si·的實例中爲515 至575奈米。可在第3及4圖中看見二種發射及激發光譜 的典型實例。第3圖顯示出具有不同X値的SrAl2 xSix〇4. XNX : Eu之發射光譜及激發光譜。第4圖顯示出具有不同X 値的BaAl2.xSix04.xNx: Eu之發射/激發光譜。 藉由變化氮的量，該發射可在495_575奈米的範圍內 偏移。特別是’Sr對偏移敏感（第3圖），同時該激發帶的 頂_可從低於400奈米向上偏移直到430至465奈米，較 佳爲至440奈米’參見M = Ba (第4圖）。所觀察到之至較長 波長的偏移爲Eu 5d帶在較低能量處的重心與Eu 5d帶的 較強配位場分裂之結果。 額外的細微調諧可藉由將Zn摻入陽離子Μ作爲一添加 物（較佳地不多於3 0% )，且至少部分的A 1由G a置換（較佳 地不多於25%)，及/或S i由Ge置換（較佳地不多於25%)而 200422375 表1 原始材料 等級 MC〇3(M = Ca、Sr、Ba) ^99^. 0% Si02 氣相二氧化矽0X50 γ- A 12〇3 >99 · 995 Si3N4 β 含量·· 2 3 . 3 %，0 〜0 . 7 % Eu2〇3 99 . 99% 在下列中’提供 MAl2.xSix〇4 xNx: (i〇%)Eu2+(M = Ca、Sr、 φ Ba )之合成程序。可能的起始材料顯示在表1。 全部的氧氮化物磷光劑（包括鱗矽石）皆根據下列反應 方程式（忽略氣相）來合成： (1-y)MC03+(2-x)/2 Al 203 + x/ 4 Si3N4 + x/4 Si02 + y / 2 E u 2 0 3 M1.yEUyAl2.xSix〇4.xNx 其中M = Ca、Sr、Ba(單獨或以組合）。一實例爲y = 〇 . }。 例如’組成物B a .9 E u。· ！ A 12 · x S i x 04 · x N x則顯示在下列表 鲁 2中。 表2(單位 :克） X値 BaC03 ai2o3 Si3N4 Si02 Eu2〇3 0.3 3.497 1.689 0.205 0.088 0 . 343 0 . 5 3.500 1.492 0.342 0.146 0.343 詳細的實驗結果顯示出該些憐光劑的發光性質事實上 200422375 幾乎與$丨02含量無關。但是，減低適當量的Si02含量（即， 其可減低最高經計算的S i 02量之1 / 6 0 )會強烈地增加相純 度和效率。 在含有小量H2(10%)之還原大氣氛N2下，在1100-1 400°C的水平管爐中，於Mo ‘坩堝內燒製該些粉末混合物數 個小時。 闡明3丨02減低的角色之樣品的進一步激發及發射光譜 則顯示在第5至8圖中。 根據第5圖的具體實施例：Ba^EunAU^O^N,， 其x = 〇.3且無減少Si02。對發射光譜來說，以λεχ^440奈 米激發該磷光劑及在Xmc)n = 5 3 0奈米處監視該激發光譜。其 主要相具有BaAl 204結構。 根據第6圖的具體實施例：Bao^Euo.MUixO^Nx， 其x = 0.3且Si02量減低至經計算的Si02量之1/4(λεχ。=440 奈米，Xmc)n =530奈米）。其主要相具有BaAl204結構。 根據第7圖的具體實施例：BauEunAUixO^N,， 其χ = 0·3且Si02量減低至經計算的Si02量之1/16(λεχ。=440 奈米，Xm()n =530奈米）。其主要相具有BaAl204結構。 使用Si3N4作爲根據下列反應[1]的（SiN)+來源： MC03+(2-x)/2 A 1 203 + x/ 4 Si3N4 + x/4 S i 02->ΜΑ 12.XS i X04-XNX (+C02t) (M=Ca、Sr、Ba)° 隨著原子半徑從Ba減小至Ca，已發現利用此反應來 將（A10) +由（SiN) +置換會變得更困難。晶格參數結果顯示出 N在具有鱗矽石結構的BaAl 204中之最大溶解度爲約P0 . 6。 200422375 第9圖顯示出在具有鱗矽石結構之BaAl2.xSix04.xNx的單位 晶格體積與X値間之關係。如所預期，如與A 1- 0距離比較 S i - N距離較小，該單位晶格體積會隨著X增加而減少，如 顯示在第9圖。對明顯大於0 . 6的X値來說，該單位晶格 體積仍然幾乎固定，且可觀察到二次相。 如此，可由鋁酸Ba且X最高約0 . 6而不需要調整S i 02 量而達成好的結果。 好的結果亦可從鋁酸S r看見。S i 02含量之減少（表示 爲y量）會產生非化學計量的MAl2.xSix-y04.x.2yNx: Eu型式 之鋁酸鹽，較佳爲y^O . 25x。最佳性能可隨著修正Si02而 達成，且X最高爲0 . 5。對鋁酸Ca來說亦相同，但是較小 的X値較佳地低於0.05。 現在更詳細地討論MAl2.xSix04.xNx: 10%Eu2+的發光性 質。第 8 圖顯示出 MAl2.xSix04.xNx: Eu2+(M=Sr,Ca)的激發 及發射光譜。Si 02含量不減少。更詳細來說，第8a圖顯示 出SrAl2.xSix〇4.xNx: Eu2+(10%)的激發及發射光譜；且第8b 圖爲CaAl2.xSix〇4.xNx: Eu2 + (10%)的激發及發射光譜，每個 具有不同的X。 與在MAl2.xSix04_xNx的單位晶格體積與X値間之關係 的結果相符合，該發射帶依陽離子而或多或少地偏移至較 長的波長。在Ba的實例中，該偏移典型地從495至53 0奈 米；在S r的實例中，該偏移典型地從5 1 5至5 7 5奈米；及 在Ca的貫例中，該偏移典型地從440至445奈米。對 BaAl2.xSix04.xNx: (1〇%)Eu2 +來說，隨著摻入氮的X含量增 200422375 加，該發射帶會從約4 9 7偏移至5 2 7奈米。因此，該激發 帶的位置會從3 8 5偏移至42 5奈米。 對 MAl2.xSix04.xNx ·· ( i〇%)Eu2 +來說，Μ 爲 Sr 或 Ca 的 至少一種’（S i N ) +的量基本上不增加發射及激發波長，因 爲在晶格參數上幾乎無觀察到偏移。在M = Ca的實例中，Eu 發射帶的最大偏移少於1 0奈米，此與摻入小量的氮之事實 相符合。因此，小量的（SiN) +摻入僅可對Eu2 +離子的局部 配位發揮弱的影響。此討論經了解爲加入正常化學計量的 Si02 量。 但是，非常驚人的結果是，在一些實例中，可優良地 使用在化學計量下的S i 02量。減少在反應（1 )中的s i 02量 對 N之摻入及對發光性質的效應在 SrAl2.xSix〇4_xNx : E u2 + ( 1 0 % )的實例中最明顯。此理由尙未完全了解。當應該 使用在反應（1)中的Si02量採用爲較低的因子60時，已發 現所增加的（S i N )+量可摻入具有塡塞的鱗矽石結構之 S r A 1 204晶格中。最大溶解度爲x^O · 5 (表1 )。摻入n的結 果爲該Eli發射帶會偏移至較長的波長，最高爲575奈米（第 3圖）。在4 3 0奈米處之明顯的激發肩狀物則顯露在氮的最 大溶解度U = 〇 . 3…0 · 5 )處’如顯示在第3圖。 除了來自鱗矽石的結構外，來自3]^丨八12〇31^結構的結 構亦可能。此化合物已由史尼克（Schni ck)在1 998年發現。 其與LnSi3N5(其中1^ = 1^、〇6、？]：、_)型式的矽酸鹽氮化 物同位。 (五）圖式簡單說明 -14- 200422375 第1圖顯示出一種可提供作爲白光光源的半導體構件 (LED ) ’其含鑄模樹脂圖（第丨a圖）及不含鑄模樹脂圖（第j b 圖）； 第2圖顯示出含有根據本發明之磷光劑的照明裝置； 第3圖顯示出根據本發明之磷光劑的發射光譜及反射 光譜； 第4至8b圖顯示出根據本發明之進一步磷光劑的發射 光譜及反射光譜； 第9圖顯示出在體積單位晶^格與X値間之關係。 元件符號說明 1 晶片 2 第一電連接 3 第二電連接 4 連結電線 5 封裝化合物 6 磷光顏料 7 邊壁 8 不透明的基礎外罩 9 凹處 10 半導體橇件 11 基材 12 接觸層 13 鏡子 14 LED晶片 濾光器 磷光劑層 塑膠鏡片 上接觸器 照明裝置 共同載體 立方體外罩 共同遮蓋物 半導體構件 轉換層 - 1 6 -

Claims (1)

  1. 200422375 拾、申請專利範圍： 1 . 一種發光材料，較佳爲一種用於led應用的憐光劑，其 可在360至470奈米的UV-藍光區域中激發，其特徵爲 具有共通組成MAl2.xSix〇4.xNx之摻雜Ειι的宿主晶格，其 中Μ爲至少一種選擇自於Ca、Sr、Ba的鹼土金屬族，其 中x20.00 2且x51 . 5，較佳的是X低於0 . 7，而Ειι的比 例爲Μ的0 . 1至2 5 %。 2 .如申請專利範圍第1項之發光材料，其中該宿主晶格來 自一鱗矽石結構。 3 ·如申g靑專利範圍第1項之發光材料，其中μ爲總及/或鎖 ，以達成發射綠光。 4 ·如申請專利範圍第丨項之發光材料，其中μ爲鈣，以達 成發射藍光。 5 ·如申請專利範圍第！項之發光材料，其中μ爲這些金屬 的至少二種之混合物， 6 .如申s靑專利範圍第1項之發光材料，其中μ額外包含& ’較佳爲最高40莫耳％。 7 ·如申請專利範圍第i項之發光材料，其中a丨由Ga完全 或部分置換。 8·如申請專利範圍第1項之發光材料，其中由Ge完全 或部分置換’較佳爲不多於2 5%。 9 .如申請專利範圍第丨項之發光材料，其中該基材材料進 一步摻雜Μη，該共摻雜的Mn量較佳爲該Eu摻雜物的至 多最高50%。 200422375 1 0 . —種具有如申請專利範圍第1至9項中任一項之發光材 料之光源（20)。 1 1 .如申請專利範圍第1 〇項之光源，其中該一級發射光爲藍 光’且如申請專利範圍第1至9項之發光材料可與其它 磷光劑結合（特別是發射紅光的磷光劑），以將該一級發 射光部分轉換成較長波長的二級發射光，而造成發射白 光。 1 2 ·如申請專利範圍第1 〇項之光源，其中該一級發射輻射爲 UV，且將如申請專利範圔第1至9項之發光材料與其它 磷光劑（特別是發射紅光及藍光的磷光劑）結合，以將該 一級發射輻射轉換成較長波長的二級發射光，以造成發 射白光。 1 3 .如申請專利範圍第1 〇項之光源，其中該光源爲一種含有 至少一 LED的照明裝置。
    -1 8 -
TW092126178A 2002-09-24 2003-09-23 Luminescent material, preferably for LED application TWI287566B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20020021177 EP1413619A1 (en) 2002-09-24 2002-09-24 Luminescent material, especially for LED application

Publications (2)

Publication Number Publication Date
TW200422375A true TW200422375A (en) 2004-11-01
TWI287566B TWI287566B (en) 2007-10-01

Family

ID=32039087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126178A TWI287566B (en) 2002-09-24 2003-09-23 Luminescent material, preferably for LED application

Country Status (8)

Country Link
US (1) US7485243B2 (zh)
EP (2) EP1413619A1 (zh)
JP (1) JP3906224B2 (zh)
CN (1) CN1311055C (zh)
AT (1) ATE335799T1 (zh)
DE (1) DE60307411T2 (zh)
TW (1) TWI287566B (zh)
WO (1) WO2004029177A1 (zh)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004210921A (ja) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd オキシ窒化物蛍光体及びその製造方法並びにそれを用いた発光装置
MY149573A (en) 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US7544309B2 (en) * 2002-12-13 2009-06-09 Koninklijke Philips Electronics N.V. Illumination system comprising a radiation source and a fluorescent material
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
KR101041311B1 (ko) 2004-04-27 2011-06-14 파나소닉 주식회사 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을 이용한 발광장치
JP4128564B2 (ja) * 2004-04-27 2008-07-30 松下電器産業株式会社 発光装置
JP4414821B2 (ja) * 2004-06-25 2010-02-10 Ｄｏｗａエレクトロニクス株式会社 蛍光体並びに光源およびｌｅｄ
JP4565141B2 (ja) * 2004-06-30 2010-10-20 独立行政法人物質・材料研究機構 蛍光体と発光器具
KR101168173B1 (ko) * 2004-08-11 2012-07-24 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 형광체와 그 제조방법
CN101044222B (zh) * 2004-09-22 2012-06-06 独立行政法人物质·材料研究机构 荧光体及其制造方法和发光器具
CN100365607C (zh) * 2004-12-31 2008-01-30 北京中星微电子有限公司 对sd卡接口进行控制的装置和方法
JP5216330B2 (ja) * 2005-02-21 2013-06-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源および発光物質を含む照明系
US7439668B2 (en) 2005-03-01 2008-10-21 Lumination Llc Oxynitride phosphors for use in lighting applications having improved color quality
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
EP1867697B1 (en) * 2005-03-04 2014-05-14 Mitsubishi Chemical Corporation Fluorescent substance and process for producing the same, and light emitting device using said fluorescent substance
WO2006095285A1 (en) * 2005-03-09 2006-09-14 Philips Intellectual Property & Standards Gmbh Illumination system comprising a radiation source and a fluorescent material
US8269410B2 (en) 2005-03-18 2012-09-18 Mitsubishi Chemical Corporation Light-emitting device, white light-emitting device, illuminator, and image display
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US8048338B2 (en) * 2005-03-31 2011-11-01 Dowa Electronics Materials Co., Ltd. Phosphor, phosphor sheet, and manufacturing method therefore, and light emission device using the phosphor
WO2006121083A1 (ja) * 2005-05-12 2006-11-16 National Institute For Materials Science β型サイアロン蛍光体
DE102005041153A1 (de) * 2005-08-30 2007-03-01 Leuchtstoffwerk Breitungen Gmbh Nitridocarbid-Leuchtstoffe
US8062549B2 (en) 2005-09-27 2011-11-22 Mitsubishi Chemical Corporation Phosphor and manufacturing method therefore, and light emission device using the phosphor
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
JP4991027B2 (ja) * 2005-12-26 2012-08-01 日亜化学工業株式会社 オキシ窒化物蛍光体及びそれを用いた発光装置
CN101379163B (zh) * 2006-02-02 2013-01-02 三菱化学株式会社 复合氧氮化物荧光体、使用该荧光体的发光装置、图像显示装置、照明装置、含荧光体的组合物以及复合氧氮化物
WO2007099862A1 (ja) * 2006-02-24 2007-09-07 National Institute For Materials Science 蛍光体とその製造方法および発光器具
CN101077973B (zh) 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 硅酸盐荧光材料及其制造方法以及使用其的发光装置
JP5331981B2 (ja) 2006-08-15 2013-10-30 ダリアン ルーミングライト カンパニー リミテッド 複数の発光ピークを有するケイ酸塩ベースの発光材料、当該発光材料を調製するための方法、及び当該発光材料を用いた発光デバイス
KR101497104B1 (ko) 2006-10-03 2015-02-27 라이트스케이프 머티어리얼스, 인코포레이티드 금속 실리케이트 할라이드 형광체 및 이를 이용한 ｌｅｄ 조명 디바이스
US8529791B2 (en) * 2006-10-20 2013-09-10 Intematix Corporation Green-emitting, garnet-based phosphors in general and backlighting applications
CN2911965Y (zh) * 2006-11-08 2007-06-13 秦波 白光发光二极管
DE102006054239A1 (de) * 2006-11-17 2008-05-21 Bayer Materialscience Ag Photochromes Material und Verfahren zu seiner Herstellung
DE102006054236A1 (de) * 2006-11-17 2008-05-21 Bayer Materialscience Ag Photochromes Material und Verfahren zu seiner Herstellung
JP5463495B2 (ja) * 2007-05-18 2014-04-09 三星電子株式会社 蛍光体の製造方法及び発光装置
JP2009263610A (ja) 2007-08-01 2009-11-12 Mitsubishi Chemicals Corp 蛍光体及びその製造方法、結晶性窒化珪素及びその製造方法、蛍光体含有組成物、並びに、該蛍光体を用いた発光装置、画像表示装置及び照明装置
WO2009031089A1 (en) * 2007-09-04 2009-03-12 Philips Intellectual Property & Standards Gmbh Light emitting device comprising a composite sialon-based ceramic material
JP5251140B2 (ja) * 2008-01-22 2013-07-31 三菱化学株式会社 蛍光体、蛍光体含有組成物、発光装置、画像表示装置及び照明装置
JP5523676B2 (ja) * 2008-02-29 2014-06-18 日亜化学工業株式会社 蛍光体及びこれを用いた発光装置
DE102008038249A1 (de) * 2008-08-18 2010-02-25 Osram Gesellschaft mit beschränkter Haftung alpha-Sialon-Leuchtstoff
DE102009025266B4 (de) * 2009-06-17 2015-08-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR101565988B1 (ko) * 2009-10-23 2015-11-05 삼성전자주식회사 적색형광체, 그 제조방법, 이를 이용한 발광소자 패키지, 조명장치
KR20110050206A (ko) * 2009-11-06 2011-05-13 삼성전자주식회사 옥시나이트라이드 형광체, 그 제조 방법 및 그것을 사용한 백색 발광 소자
US8643038B2 (en) * 2010-03-09 2014-02-04 Cree, Inc. Warm white LEDs having high color rendering index values and related luminophoric mediums
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
KR101717668B1 (ko) * 2010-03-26 2017-03-17 삼성전자주식회사 복합 결정 형광체, 발광장치, 디스플레이 장치 및 조명장치
TWI456028B (zh) * 2011-02-16 2014-10-11 Univ Nat Cheng Kung Ｍｇ－α－ＳｉＡｌＯＮ為主體晶格之螢光材料的製造方法及螢光材料的後製程方法
DE202011106052U1 (de) * 2011-09-23 2011-11-09 Osram Ag Lichtquelle mit Leuchtstoff und zugehörige Beleuchtungseinheit.
DE102012202927B4 (de) * 2012-02-27 2021-06-10 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
JP6335884B2 (ja) * 2012-05-22 2018-05-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 固体照明のための新規狭帯域赤色発光蛍光体のような新規蛍光体
JP5557360B1 (ja) * 2012-12-14 2014-07-23 電気化学工業株式会社 蛍光体、その製造方法及び発光装置
US10283681B2 (en) * 2013-09-12 2019-05-07 Cree, Inc. Phosphor-converted light emitting device
JP6169468B2 (ja) * 2013-10-09 2017-07-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 蛍光体
CN104610967A (zh) * 2015-02-15 2015-05-13 江西理工大学 一种稀土掺杂的氮氧化物绿色荧光粉及其制备方法
JP6008017B2 (ja) * 2015-06-12 2016-10-19 日亜化学工業株式会社 蛍光体及びこれを用いた発光装置
US11453821B2 (en) * 2019-12-05 2022-09-27 Lumileds Llc Narrow band emitting SiAlON phosphor
US11729915B1 (en) * 2022-03-22 2023-08-15 Tactotek Oy Method for manufacturing a number of electrical nodes, electrical node module, electrical node, and multilayer structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112777A (en) * 1965-11-24 1968-05-08 Gen Electric Co Ltd Improvements in or relating to luminescent materials
NL8400660A (nl) * 1984-03-01 1985-10-01 Philips Nv Luminescerend scherm.
US6278135B1 (en) 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
US6501100B1 (en) 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
JP2002076434A (ja) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
US6802990B2 (en) * 2000-09-29 2004-10-12 Sumitomo Chemical Company, Limited Fluorescent substances for vacuum ultraviolet radiation excited light-emitting devices
EP1413618A1 (en) * 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
US7267787B2 (en) 2004-08-04 2007-09-11 Intematix Corporation Phosphor systems for a white light emitting diode (LED)

Also Published As

Publication number Publication date
DE60307411T2 (de) 2007-03-29
US7485243B2 (en) 2009-02-03
EP1438364B1 (en) 2006-08-09
US20060033081A1 (en) 2006-02-16
TWI287566B (en) 2007-10-01
JP3906224B2 (ja) 2007-04-18
EP1438364A1 (en) 2004-07-21
WO2004029177A1 (en) 2004-04-08
CN1596292A (zh) 2005-03-16
JP2005529229A (ja) 2005-09-29
EP1413619A1 (en) 2004-04-28
DE60307411D1 (de) 2006-09-21
WO2004029177A8 (en) 2004-06-03
ATE335799T1 (de) 2006-09-15
CN1311055C (zh) 2007-04-18

Similar Documents

Publication Publication Date Title
TW200422375A (en) Luminescent material, preferably for LED application
TWI283078B (en) Luminescent material, especially for LED application
JP4617323B2 (ja) 新しい組成の黄色発光Ｃｅ３＋賦活シリケート系黄色蛍光体、その製造方法及び前記蛍光体を包含する白色発光ダイオード
TWI394815B (zh) 螢光體組成物及其製造方法、使用該螢光體組成物之發光裝置
JP4988181B2 (ja) 酸窒化物系蛍光体及びその製造法
JP5511820B2 (ja) アルファ−サイアロン発光体
WO2008020541A1 (fr) Dispositif électroluminescent et dispositif d'éclairage
JP2013543016A (ja) ケイ素カルビドニトリドベースの蛍光体およびこれを使用する発光素子
US9657222B2 (en) Silicate phosphors
JP2005336450A (ja) 蛍光体組成物とその製造方法、並びにその蛍光体組成物を用いた発光装置
JP2006257385A (ja) 酸窒化物系蛍光体及びその製造法
JP4988180B2 (ja) 酸窒化物系蛍光体及びその製造法
KR20160003195A (ko) 인광체
JP4754919B2 (ja) 酸窒化物系蛍光体及びその製造法
JP4098354B2 (ja) 白色発光装置
JP2006348070A (ja) 酸窒化物系蛍光体及びその製造法
KR101114190B1 (ko) 산화질화물계 형광체, 그의 제조방법 및 발광 장치
KR101103999B1 (ko) 산화질화물계 형광체, 그의 제조방법 및 발광 장치
CN115397948B (zh) 窄带的绿色的发光材料
KR20120063585A (ko) 실리콘 질화물 형광체, 이의 제조 방법 및 이를 이용한 광 소자
Morishita et al. Preparation of red-emitting Eu2+-doped barium calcium silicon oxynitride by solid-state reaction and its luminescence properties
KR20090065646A (ko) 형광체, 코팅 형광체 조성물, 형광체 제조방법 및 발광소자

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees