TW200409223A - Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers - Google Patents

Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers Download PDF

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Publication number
TW200409223A
TW200409223A TW092120001D TW92120001D TW200409223A TW 200409223 A TW200409223 A TW 200409223A TW 092120001 D TW092120001 D TW 092120001D TW 92120001 D TW92120001 D TW 92120001D TW 200409223 A TW200409223 A TW 200409223A
Authority
TW
Taiwan
Prior art keywords
metal layer
thickness
layer
patent application
item
Prior art date
Application number
TW092120001D
Other languages
English (en)
Chinese (zh)
Inventor
Hui Wang
Muhammed Afnan
Peihaur Yih
Damon L Koehler
Chaw-Chi Yu
Original Assignee
Acm Res Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Res Inc filed Critical Acm Res Inc
Publication of TW200409223A publication Critical patent/TW200409223A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW092120001D 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers TW200409223A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39794102P 2002-07-22 2002-07-22
US40399602P 2002-08-17 2002-08-17

Publications (1)

Publication Number Publication Date
TW200409223A true TW200409223A (en) 2004-06-01

Family

ID=30773050

Family Applications (2)

Application Number Title Priority Date Filing Date
TW092120001D TW200409223A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
TW098123632A TW200949918A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098123632A TW200949918A (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Country Status (9)

Country Link
US (1) US20050245086A1 (https=)
EP (1) EP1573783A2 (https=)
JP (2) JP2006511699A (https=)
KR (1) KR101151456B1 (https=)
CN (1) CN101427351B (https=)
AU (1) AU2003256673A1 (https=)
CA (1) CA2491951A1 (https=)
TW (2) TW200409223A (https=)
WO (1) WO2004010477A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200845162A (en) * 2006-05-02 2008-11-16 Acm Res Inc Removing barrier layer using an eletro-polishing process
US7667835B2 (en) * 2006-08-28 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing copper peeling in ECP
US20090133908A1 (en) * 2007-11-28 2009-05-28 Goodner Michael D Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same
KR101492467B1 (ko) 2008-08-20 2015-02-11 에이씨엠 리서치 (상하이) 인코포레이티드 베리어층 제거 방법 및 장치
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
CN104471690B (zh) * 2012-05-24 2017-04-19 盛美半导体设备（上海）有限公司 脉冲电化学抛光方法及装置
JP6186780B2 (ja) 2013-03-18 2017-08-30 富士通株式会社 半導体装置およびその製造方法
CN104952787B (zh) * 2014-03-26 2020-03-27 盛美半导体设备(上海)股份有限公司 径向厚度自动修整方法
JP6301003B2 (ja) * 2014-07-08 2018-03-28 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 金属配線形成方法
CN107258011A (zh) 2014-10-31 2017-10-17 维克精密表面处理有限责任公司 执行湿蚀刻工艺的系统和方法
CN105300324B (zh) * 2015-09-16 2018-06-01 浙江工业大学 一种脆性材料表面在抛光前的评价方法
TWI738757B (zh) * 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
EP3590128A1 (en) 2017-03-03 2020-01-08 Veeco Precision Surface Processing LLC An apparatus and method for wafer thinning in advanced packaging applications
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
CN113604864A (zh) * 2021-06-29 2021-11-05 晋西工业集团有限责任公司 一种深度可控的电解剥层方法
EP4299800A1 (de) * 2022-07-01 2024-01-03 Technische Universität Bergakademie Freiberg Vorrichtung und verfahren zur plasmaelektrolytischen bearbeitung der elektrisch leitfähigen oberfläche eines werkstücks durch elektrolytstrahlen
CN120109089B (zh) * 2025-05-12 2025-07-22 合肥晶合集成电路股份有限公司 导电插塞的制备方法、半导体器件的制备方法及半导体器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447668B1 (en) * 1998-07-09 2002-09-10 Acm Research, Inc. Methods and apparatus for end-point detection
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
CA2352160A1 (en) * 1998-11-28 2000-06-08 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6234870B1 (en) * 1999-08-24 2001-05-22 International Business Machines Corporation Serial intelligent electro-chemical-mechanical wafer processor
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
CN100497748C (zh) * 2001-11-13 2009-06-10 Acm研究公司 电解抛光组件以及对导电层执行电解抛光的方法
US7175503B2 (en) * 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
US6861354B2 (en) * 2002-02-04 2005-03-01 Asm Nutool Inc Method and structure to reduce defects in integrated circuits and substrates

Also Published As

Publication number Publication date
EP1573783A2 (en) 2005-09-14
CA2491951A1 (en) 2004-01-29
AU2003256673A1 (en) 2004-02-09
CN101427351A (zh) 2009-05-06
JP2007073974A (ja) 2007-03-22
WO2004010477A3 (en) 2008-10-30
TW200949918A (en) 2009-12-01
WO2004010477A2 (en) 2004-01-29
AU2003256673A8 (en) 2008-11-20
KR101151456B1 (ko) 2012-06-04
KR20050021553A (ko) 2005-03-07
JP2006511699A (ja) 2006-04-06
US20050245086A1 (en) 2005-11-03
CN101427351B (zh) 2011-12-21

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