CN101427351B - 抛光形成在半导体晶片上的金属层的方法及系统 - Google Patents

抛光形成在半导体晶片上的金属层的方法及系统 Download PDF

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Publication number
CN101427351B
CN101427351B CN038174197A CN03817419A CN101427351B CN 101427351 B CN101427351 B CN 101427351B CN 038174197 A CN038174197 A CN 038174197A CN 03817419 A CN03817419 A CN 03817419A CN 101427351 B CN101427351 B CN 101427351B
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China
Prior art keywords
electrobrightening
metal level
wafer
thickness
end point
Prior art date
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Expired - Fee Related
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CN038174197A
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English (en)
Chinese (zh)
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CN101427351A (zh
Inventor
王晖
穆罕莫德·阿法恩
佩哈尔·耶海
戴蒙·L·科勒尔
于朝智(音译)
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ACM Research Inc
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ACM Research Inc
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Publication date
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Publication of CN101427351A publication Critical patent/CN101427351A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CN038174197A 2002-07-22 2003-07-22 抛光形成在半导体晶片上的金属层的方法及系统 Expired - Fee Related CN101427351B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39794102P 2002-07-22 2002-07-22
US60/397,941 2002-07-22
US40399602P 2002-08-17 2002-08-17
US60/403,996 2002-08-17
PCT/US2003/022928 WO2004010477A2 (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Publications (2)

Publication Number Publication Date
CN101427351A CN101427351A (zh) 2009-05-06
CN101427351B true CN101427351B (zh) 2011-12-21

Family

ID=30773050

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038174197A Expired - Fee Related CN101427351B (zh) 2002-07-22 2003-07-22 抛光形成在半导体晶片上的金属层的方法及系统

Country Status (9)

Country Link
US (1) US20050245086A1 (https=)
EP (1) EP1573783A2 (https=)
JP (2) JP2006511699A (https=)
KR (1) KR101151456B1 (https=)
CN (1) CN101427351B (https=)
AU (1) AU2003256673A1 (https=)
CA (1) CA2491951A1 (https=)
TW (2) TW200409223A (https=)
WO (1) WO2004010477A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200845162A (en) * 2006-05-02 2008-11-16 Acm Res Inc Removing barrier layer using an eletro-polishing process
US7667835B2 (en) * 2006-08-28 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing copper peeling in ECP
US20090133908A1 (en) * 2007-11-28 2009-05-28 Goodner Michael D Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same
KR101492467B1 (ko) 2008-08-20 2015-02-11 에이씨엠 리서치 (상하이) 인코포레이티드 베리어층 제거 방법 및 장치
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
CN104471690B (zh) * 2012-05-24 2017-04-19 盛美半导体设备（上海）有限公司 脉冲电化学抛光方法及装置
JP6186780B2 (ja) 2013-03-18 2017-08-30 富士通株式会社 半導体装置およびその製造方法
CN104952787B (zh) * 2014-03-26 2020-03-27 盛美半导体设备(上海)股份有限公司 径向厚度自动修整方法
JP6301003B2 (ja) * 2014-07-08 2018-03-28 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 金属配線形成方法
CN107258011A (zh) 2014-10-31 2017-10-17 维克精密表面处理有限责任公司 执行湿蚀刻工艺的系统和方法
CN105300324B (zh) * 2015-09-16 2018-06-01 浙江工业大学 一种脆性材料表面在抛光前的评价方法
TWI738757B (zh) * 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
EP3590128A1 (en) 2017-03-03 2020-01-08 Veeco Precision Surface Processing LLC An apparatus and method for wafer thinning in advanced packaging applications
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
CN113604864A (zh) * 2021-06-29 2021-11-05 晋西工业集团有限责任公司 一种深度可控的电解剥层方法
EP4299800A1 (de) * 2022-07-01 2024-01-03 Technische Universität Bergakademie Freiberg Vorrichtung und verfahren zur plasmaelektrolytischen bearbeitung der elektrisch leitfähigen oberfläche eines werkstücks durch elektrolytstrahlen
CN120109089B (zh) * 2025-05-12 2025-07-22 合肥晶合集成电路股份有限公司 导电插塞的制备方法、半导体器件的制备方法及半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6234870B1 (en) * 1999-08-24 2001-05-22 International Business Machines Corporation Serial intelligent electro-chemical-mechanical wafer processor
CN1318207A (zh) * 1998-07-09 2001-10-17 Acm研究公司 电抛光半导体器件上金属互连的方法和装置

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US6447668B1 (en) * 1998-07-09 2002-09-10 Acm Research, Inc. Methods and apparatus for end-point detection
CA2352160A1 (en) * 1998-11-28 2000-06-08 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
CN100497748C (zh) * 2001-11-13 2009-06-10 Acm研究公司 电解抛光组件以及对导电层执行电解抛光的方法
US7175503B2 (en) * 2002-02-04 2007-02-13 Kla-Tencor Technologies Corp. Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device
US6861354B2 (en) * 2002-02-04 2005-03-01 Asm Nutool Inc Method and structure to reduce defects in integrated circuits and substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1318207A (zh) * 1998-07-09 2001-10-17 Acm研究公司 电抛光半导体器件上金属互连的方法和装置
US6234870B1 (en) * 1999-08-24 2001-05-22 International Business Machines Corporation Serial intelligent electro-chemical-mechanical wafer processor

Also Published As

Publication number Publication date
EP1573783A2 (en) 2005-09-14
CA2491951A1 (en) 2004-01-29
AU2003256673A1 (en) 2004-02-09
TW200409223A (en) 2004-06-01
CN101427351A (zh) 2009-05-06
JP2007073974A (ja) 2007-03-22
WO2004010477A3 (en) 2008-10-30
TW200949918A (en) 2009-12-01
WO2004010477A2 (en) 2004-01-29
AU2003256673A8 (en) 2008-11-20
KR101151456B1 (ko) 2012-06-04
KR20050021553A (ko) 2005-03-07
JP2006511699A (ja) 2006-04-06
US20050245086A1 (en) 2005-11-03

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Granted publication date: 20111221

Termination date: 20180722