TW200400608A - Bonding pad for gallium nitride-based light-emitting device - Google Patents
Bonding pad for gallium nitride-based light-emitting device Download PDFInfo
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- TW200400608A TW200400608A TW092116486A TW92116486A TW200400608A TW 200400608 A TW200400608 A TW 200400608A TW 092116486 A TW092116486 A TW 092116486A TW 92116486 A TW92116486 A TW 92116486A TW 200400608 A TW200400608 A TW 200400608A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 40
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010931 gold Substances 0.000 claims abstract description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 5
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- 229910000679 solder Inorganic materials 0.000 claims description 29
- 239000007769 metal material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- -1 nitride nitride Chemical class 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229940098465 tincture Drugs 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 112
- 238000000137 annealing Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241001529572 Chaceon affinis Species 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000002680 magnesium Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000003530 quantum well junction Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Description
200400608 玖、發明說明： 【先前技術】 近來，諸多的注意力係已經針對於氮化鎵為基礎（GaN-based)的化合物半導體（例如：InxAlyGah_yN，其中：x + y Sl，〇Sx^l，且O^y^l)，針對藍光、綠光、與紫外光 的發光二極體（LED, light emitting diode)應用。一個重 要的理由係在於，GaN為基礎的LED係已發現為表現於室 溫之有效率的發光。 身又而吕’ G a N為基礎的L E D包含一多層結構，於其 ’ η型與p型之GaN為基礎的半導體層係堆疊於一基板（最 為普遍為於一藍寶石（sapphire)基板，且η型GaN為基 礎的半導體層為接觸於基板），且InJa^xN/GaN多量子井 (quantum well)層係夾設於p型與η型之GaN層。用於成 長該多層結構之多個方法係習知於此技藝，包括：金屬有 機化學汽相沉積（MOCVD，metal organic chemical vapor deposition)、分子束外延（MBE, molecular beam epitaxy)、氫化物汽相外延（HVpE，hydride vapor phase epi taxy) ° 一般而言，藉著諸如M0CVD之成長（growth)方法所形 成之P型G a N為基礎的半導體層係呈現類似為一半絕緣或 问電阻性的材料。此係思及為由存在於反應室的氫氣所引 起之氫氣鈍化而造成，其為複合於p型摻雜劑（d〇pant)而 口此阻止遠摻雜劑為呈現如一活化載體。典型而言，p型 G a N為基礎的半導體材料係熱退火以活化p型載體。然而 ，即使在熱退火之後，p型GaN為基礎的半導體材料之電 200400608 阻性係仍為相當高。 由於PMGaN為基礎的半導體層係具有僅為中度的導 p電極❹型為形成以覆蓋於—個_為基礎的 ^ <rr.l ^ 電性 I確㈣、/型⑽為基礎的半導體層之實質整個表面， 崔保電心之均勻施加至整> 泊έι Μ π丄 且侍到來自該發光裝置之 置所發射的光線係可透過p電極而觀察。典 =，p電極層係必須為極薄以成為透光性，且因此難 〜也卩文附接一丈目拉厶合石甘 m 因此，—烊接墊係利以附接 :接線至P電極。然而，運用於焊接塾之金屬材料係可移 '至p電極’引起該電極之光透射與歐姆性質之惡化。過 去’此_係已經特別發生在當該燁接墊包括銘之時。 【發明内容】 本發明係-種用於電極之焊接塾，其為接觸於P型氮 化鎵為基礎的半導體材料，且其包括紹。於一個實施例， 該焊接墊亦包括其為選自le、#、鎳與金所組成之群組的 一或多個金屬。於-個較佳實施例，該谭接塾包括結、鈀 與金。 本發明之焊接墊係可運用以附接一焊接線至諸如發光 二極體（LED)或雷射二極體（LD, laser di〇de)之一個半導 體裝置的P電極。其利用本發明之焊接墊的一個半導體裝 置包括-基板，其具有-第__主表面。於該基板之第一主 表面係一個半導體裝置結構，其包括一 η型氮化嫁為基礎 200400608 的半導體層、與於n型半導體層上之一 ？型氮化録為基礎 的半=體層。-第—電極係電氣接觸於該η型半導體層， 且一第二電極係接觸於該ρ型半導體層。含有包括鋁之一 金屬材料的-焊接墊係接觸於第二電極。於一個實施例， 该焊接塾更包括把。舉例而言，該焊接塾可具有其為接觸 ^一電極之一鈀層、與於該鈀層上之一銘層。於另一個 貫施例，該焊接墊可為一種三層的金屬材料。舉例而言， =接塾可具有其接觸於第二電極之—_、與於該把層 一鋁層與一金層。於此個實例，鋁層係可為於鈀層 θ之間，或是金層係可為於鈀層與鋁層之間。於另一 例，第-電極與焊接塾係實質為相同的材料。、如運 ::文之語句“實質為相同的材料”係意謂的是 的孟屬材料係運用以作成 屬元丰㈣弟—電極’但該等金 。心：為以相同的量而存在於該焊接塾與第-電極 作：例二，焊接塾與第一電極係可均為由把、銘與金所 季父多的鈀及/或金。 $人備製其利用本於日月、纟曰 有一》一 ^ ^月之坏接墊的一種半導體裝置，具 弟一主表面之一基板係提 了 提供於該基板之第一 士 , 牛導體裝置結構係 型Μ匕兹A“ 該半導體裝置結構包括- η — 〕牛導體層、與於該η型半導體層之上 Ρ里氮化鎵為基礎的半導體声。一 一 / 為電氣接觸於該η型氮化:…。盈係提供，其 電極係提供，JL為接觸 〜石的半導體層’且一第二 ，、為接觸於该ρ型半導體層。含有一金屬材 200400608 料（其包括：幻之-焊接塾係形成，使得其為接觸於第— 電極。於-個實施例，焊接墊係藉著形成一把層為接觸: 第二電極且形成一鋁層於該鈀層而形成。於另一個實扩、 ’焊接墊係藉著形成一鈀層為接觸於第二電極、形:一& = 層於該紐層、且形成一金層於該銘層而形成。於另二個： 施例，焊接塾與第-電極係由實質為相同的金屬材料而二 成。=此貫施例，焊接墊與第一電極係可為同時形成。舉 例而5，-弟-把層係形成為接觸於n型氮化嫁為基礎的 半導體層，而且同時形成一第，為接觸於第二電極（ 即.P電極）。然後，一鋁層係同時為形成在其接觸於η型 乳化鎵為基礎的半導體層之該把層與其接觸於第二電極之 ❹層之上’因而同時形成第一電極與焊接塾。於一個較 佳^施^ ’―金層係同時形成於第-電極與焊接墊之上。 ^圭而s 在其形成該第一電極與谭接塾的金屬層之沉積 後，第一電極與焊接墊係同時為退火。 =本發明之方法所形成的焊接塾係令人滿意地附著至 、于^未惡A P電極之光透射或歐姆性質。此外，運 恭^本^明之^干接墊的金屬材料係亦可運用以形成-形成—良好的歐姆接觸於一 n型氮化錄為基礎的 带月且二°因此’當製造氮化鎵為基礎的裝置時，用於P ^置可與η電極而同時形成’實質降低製造該 【實施方式】 200400608 如運用於本文，氮化鎵為基礎的半導體材料係具有式 子InxAlyGa卜x_yN之一種材料，其中·· ， 且〇 $ y S 1。氮化鎵為基礎的半導體材料係通常為由一種 汽相成長方法所成長，諸如：金屬有機化學汽相沉積 (M0CVD或M〇VPE)、氫化物化學汽相沉積（HDCVD)、或分子 束外延⑽E)。—般而言，—氮化鎵為基礎的半導體材料係 一 n型材料，即使當並無η型摻雜劑為納入於材料：由於 氮晶格空缺係產生於晶體成長期間。因此，一 η型氮化鎵 為基礎的半導體材料係可為不包括1型#雜劑。然面， 一 η型氮化鎵為基礎的半導體係典型為當該材料包括一。 型推雜劑時而呈現為齡朴 道 +”、、較佺的導電性。用於氮化鎵為基礎的 半導體材料之η型摻雜劑禆白& 土心雊Μ係包括諸如··矽、鍺、與錫之第 四族（Group IV)元素、 及啫如硒、碲、與硫之第六族 (Group VI)元素。 制ΙΓ型氮化錄為基礎的半導體材料係包括一 p型摻雜 別之一氮化鎵為基礎的丰邕 +導體材料。用於氮化鎵為基礎的 +導體材料之P型摻雜 ^ 莖_ # ίΓ (亦稱為一受體（acceptor))包括 弟一紅（Gr〇up U)元素， Λ φ •鎘、鋅、鈹、鎂、鈣、錄 人鋇。較佳的Ρ型摻雜 铉糸其淑ΑΑ I d係鎂與鋅。典型而言，於氮化 八铷粆劫八4 成長期間，含有氫原子之氣體化 口物仏熱分解以形成 要為皙+ / 材枓。所釋放的氫原子（其主 罟马貝子）係成為捕捉於 摻雜甽而：k心4 成長的半導體材料，且結合P型 柘雜剑而抑制其受體作用。 半導體材料之導命性，士 文善一 P型氮化鎵為基礎的 ^ ’咸材料係可置放於一高電場（典型 200400608 為1 0, 000伏特/公公夕μ#从上 行/ Α刀之上）而持績約為10分鐘或更多。捕 捉於半導體材料之質子得自兮 貝卞係自忒材枓而抽取至負電極，因而 活化P型摻雜劑之作用（參閱例如：美國專利申請案第 1〇/1 27,345號）。或者’ p型氮化鎵為基礎的半導體材料之 導電性係可改善，藉菩m^ 稭者ι人该材枓於一氮氣環境且溫度在 攝氏6 0 0度以上而持續為]〇八於+ 行、貝馮1 U为鈿或更多（參閱例如··美國 專利第5, 306, 662號）。
如上所述，一種氮化鎵為基礎的半導體結構包括一 ρ 型氮化鎵為基礎的半導體層與η型氮化鎵為基礎的半導體 層。Ρ型鼠化鎵為基礎的半導體層係一般為成長於η型氮 化鎵為基礎的半導體層。該η型肖ρ
為接觸於彼此’或者是’一活性區域係可為夹設於該= 與Ρ型氮化鎵為基礎的半導體層之間。一活性區域可具有 一單量子井結構或一多量子井結構。具有單量子井結構之 一活性區域係具有由一氮化鎵為基礎的半導體材料所形成 之單一層（即：井層），具有相較於將其夾設之η型與口型 氮化鎵為基礎的半導體層之一較低的域帶間隙（band-gap) 。其具有多量子井結構之一活性區域係包括多個井層，其 為交替堆疊於具有相較於該等井層（即：障壁層）之一較高 的域帶間隙之多層。最接近於η型氮化鎵為基礎的半導體 層之遠活性區域的最外層係一井層，且具有相較於η型氮 化鎵為基礎的半導體層之一較小的域帶間隙。最接近於ρ 型氮化鎵為基礎的半導體層之活性區域的最外層係可為一 井層或一障壁層，且可具有其為大於或小於ρ型氮化鎵為 12 200400608 基礎的半導體層之一诚後 構之-井層的厚度係約：：“典型而言’於-量子井結 15〇人或更小。-般而言：於Λ更：且障壁層係約為 係非為故意摻雜。 里子井結構之井層與障壁層 如於本文所用之關於電極的語句“實 (Ught transmissive)，， 先透射 1示思明的是，該電極待於i悉 至少1%之發射自氮化鎵兔“ 0係於其透射 +千… 叙為基礎的半導體裝置之光線。一光 =之電極係典型為透射大約瞻大約繼之發射自氮化 叙為基礎的半導體裝置之光、轉。 “如於本文所用之語句“歐姆接觸( — ic_Ct)，，# 指出二個材料為接觸於其 t)係 於該區域之電流係正比於並為二，、具有性貝為：流通 於其為跨於該區域之電位差異。 本發明之焊接墊係藉著 ，舰ώ @ ^ 積金屬層於一 Ρ電極而形成 所：錢、Α空電阻式加熱、或是對於熟悉此技藝人士 白知之其他的沉積技術。典型而言，一 、鉑、鎳或其組合者係沉積 、曰之、，巴 痄由 買Ρ冤極。弟一金屬層係具有 厂予度於大約20Α與大約義入之間的範圍。較佳而言 =之厚度係於大約5GA與福之間的範圍。具有厚度 巳圍於大約―與大約1GGGA之間的層係沉積於第一 二士。較佳而言’銘層之厚度係於大約3。人與150A之間 、乾圍。具有厚度範圍於大約罐與大約Η，嶋A之間 金層係沉積於铭層上。較佳而言’金層之厚度係於大 、、、勺3, 000A與大約6, oooA之間的範圍。 在焊接墊的金屬層之沉積後，焊接塾係選用式退火， 13 200400608
藉著加熱焊接墊至範圍為於大約攝氏35〇度與大約攝氏 -之間的-溫度而持續為大約30秒至大約卜“寺”交 佳的退火溫度範圍係於大約攝氏度與大約攝氏度 之間。退火(annealing)係可運用一爐、快速熱退火、或一 :板：達成。於某些實例，退火p電極係為合意。舉例而 其沉積以形《p電極之金屬層係含有鎳，鎳係可氧 化為乳化銻，其形成相較於錄之—較佳的歐姆接觸，藉著 退火_P電極於其含有至少大約1%的氧氣之一環境(參二· …002年6月28曰提出之標題為“用於p型氮化鎵 ‘、、、土礎的半導體之電極，，的美國專利中請案第ig/i87,465 號）。當退火P電極係為合意，肖p電極與焊接塾係可 同時退火。
於一個較佳實施例，接觸於一個半導體裝置之η型氮 化鎵為基礎的半導體層《η電極係由如同焊接墊之實質相 同的材料所構成。於此實施例，η電極之金屬層係可為以 =對焊接塾之上述的順序而作沉積。典型而言，η電極之 至屬層係具有厚度為於針對焊接塾之各個金屬層所述的範 圍。然而，雖然針對焊接塾之紹層與針對η電極之銘層的 厚j係均為於大約i0A與大約1〇〇〇Α之間的範圍，於一個 較佳實施例’於η電極之鋁層係較厚於焊接墊之鋁層。 第一圖係顯示氮化鎵為基礎的發光二極體〗〇，其具有 η電極34與用於ρ電極18之焊接墊犯。如上所論，η電 極34與焊接墊32係可為實質相同的材料所形成且可為單 獨或同時而形成。氮化鎵為基礎之半導體層14係形成 14 200400608 =基板12。p型氮化鎵為基礎之半導體们6 氮化鎵為基礎之声上。木 币』t 乂风万、η型 材⑽成： 與焊接塾係由實質相同的 材科所形成，層20係可為如同層26 择^ Zb之相同材料而構成， 曰2 2係可為如同層2 8之相同叔祖 如同；q… δ之相门材枓而構成’且層24係可為 相同材料而構成。然而，層2。係無須為如同 層26之相同厚度，声2 …、冋 層22係無須為如同層28之相同厚声， 且層24係無須為如同声3 ^ 例，層2…"由二 厚度。於一個較佳實施 ……由把⑽、始⑽、錄⑻)或其組合者 ""/日^與28係南鋁（A〗）而構成，且層24鱼30炫 由金（Au)而構成。 曰^ ” μ '你 車父佳為藉著加熱η電極至約為 聊度之間Hi日以為攝氏35G度與約為攝氏 μ度靶圍且約為30秒至約為1小時而退火 口亥 Π 1¾才系 〇 ,一击六乂土仏、 Μ的退火溫度範圍係於約為攝氏400度盘 約為攝氏500唐之pq ^ ” 。 B。焊接墊與n電極係較佳為同時退火 1 種烊接墊係藉著沉積- 100埃(A)之厚的鈀層於一 p ，^而備製。—1GG A之厚㈣層係沉積於把層，然後 A《厚的金層係沉積於！s層。該等金屬層係退 氏^有65/°的1氣與35%的氣氣之一環境的一爐且以攝 度之一溫度而持續為30分鐘。 種焊接墊係藉著沉積一 2〇〇埃⑷之厚的鈀層於一 p 4而備製。-100人之厚的紹層係沉積於把層，然後 15 200400608 5 0 0 0 A之厚的金層係沉積於鋁層。該等金屬層係退 火於其含有100%的氮氣之一環境的一快速熱退火裝置且以 攝氏450度之一溫度而持續為1〇分鐘。 乂 κ例1或2所述之方法的任一者而形成之焊接塾係 並未貝貝改夂p電極之光透射。此外，p電極係在該焊接 墊之加入後而維持為形成一良好的歐姆接觸。 等效者 、 儘管本發明係已經關於其較佳實施例而特定顯示及說 熟悉此技藝人士將可瞭解的丨，於形式與細節之種種 =變化係可作成於其，而未偏離由隨附的申請專利範圍所 涵盍之本發明的範疇。 【圖式簡單說明】 (一）圖式部分 第 實例。 圖係其具有本發明 之一焊接墊之一發光二極體的
(二）元件代表符號
GaN為基礎之發光二極體 基板 4 n型GaN為基礎之半導體層 16 P型GaN為基礎之半導體声 18 p電極 22、24焊接塾32之諸層 26、28、30 η電極34之諸層 16 200400608 32 焊接墊 34 η電極
17
Claims (1)
- 200400608 拾、申請專利範圍： 1· 一種半導體裝置，包含： 一基板，具有一第一主表面； -半導體裝置結構，於基板之第一主表面上，該裝 結構包含-η型氮化鎵（GaN)為基礎的半導體層、與於該^ 型半導體層上之p型氮化鎵為基礎的半導體層； 一第一電極，電氣接觸於該n型半導體層；一第二電極，接觸於該p型半導體 -悍接塾’接觸於第二電極，=二含—金屬材 料，其包括鋁（A1)。 2..如申請專利範圍帛！項之半導體裝置，其中，該焊 接塾之金屬材料更包含：其為選自把㈣、翻⑽广錄 (Ni)與其組合者所組成之群組的一金屬。 3.如申請專利範圍帛2項之半導體裝置，其中，該焊 接墊之金屬材料更包含··鈀。 4·如申請專利範圍 接墊之金屬材料包含： 該把層上之一層的紹。 第3項之半導體裝置，其中 其接觸於第二電極之一鈀層 該焊 與於5·如中請㈣範^ 1項之半導體裝置，其中，該犬 接墊之金屬材料更包含：金（Au)。 6·如申請㈣_第1項之半導體裝置，1中，W =包：：三層的金屬材料’包括其接觸於第二二 鈀層、與於該鈀層之上的各一鋁層與金層。 7.如申請專利範圍第〗項之半導體；置，Μ 18 2o〇40〇6〇8 電極係實質為透光。 電二::申請專利刪1項之半導體裝置，”，第-、烊接墊包含實質相同的金屬材料。 八 導體=請專利範圍第1項之半導體裝置，更包含:半 "； 活性區域於n型半導體屑金 間。 體層與p型半導體層之 其中，該活 10·如申請專利範圍第9項之 性區域具有—單量子井之結構。體破置 其中，該活 Π.如申請專利範圍第9項之 性區域具有—多量子井之結構。 … I2.—種製造半導體裝置之方法，包含： 提供—基板，其具有一第一主表面. 半導體裝置結構於基板之第—主表面 二型氮化鎵為基礎的半導體層、與於該η型半 導版層上之一Ρ型氮化鎵為基礎的半導體層； /、弟電極，電氣接觸於該η型半導體声· 提供一第二電極，接觸於該Ρ型半導體層；及 形成—焊接塾，接觸於第二電極，悍接塾 鋁之一金屬材料。 匕a其包括 13·如申請專利範圍第12項之方法，其中，#一 “ 係由一金屬材料所構成里為實 電極 屬材料。 構η…於包含該焊接墊之金 14.如申請專利範圍第13項之方法，苴中 電極之步驟與形成料塾之步驟係實f為同時執行提供第一 19 200400608 15.如申請專利範圍 接塾之金屬材料更包含 群組的至少一金屬。 第12項之方法，其中，包含該焊 •其為選自鈀、鉑、與鎳所組成之 16.如申請專利範圍第12 墊之步驟包含：形成一第一層 與錄所組成之群組，且直接接 鋁層於第一層上。 項之方法，其中，形成焊接 的金屬，其為選自鈀、鉑、 觸於第二電極；及，形成一 17·如申請專利範圍第16項之方法，其中 墊之步驟更包▲•犯氺 入硫 /、 ’ 、于妾 ” \ ^ .〜成一金層於該鋁層上。 18· —種半導體裝置，包含： 一基板，具有一第一主表面； 半導體裝置結構，於基板之第一主 結構包含-η型氮化録為基礎的半導體層、邀於 V體層上之ρ型氮化鎵為基礎的半導體層； 干 第一電極，電氣接觸於該η型半導體層； 第一電極，接觸於該ρ型半導體層；及 焊接墊，接觸於第二電極，其中，— 墊係由實質相Π沾八電極與焊接 田貝貝相同的金屬材料所形成，該金屬 1 9·如申请專利範圍第1 8項之半導體裝置、 —電極與焊接墊係各包含銘、金、與其為’，、中’第 鎳所組成之群相的 +夕 目絶、翻、與 取炙群組的一或多個金屬。 2〇.—種製造半導體裝置之方法，包含·· 提供一基板，其具有一第一主表面； 提供—半導體裝置結構於基板之第一主 表面，該裝置 200400608 結構包含一 η型氮化鎵為基礎的半導體層、與於該n型半 導體層上之ρ型氮化蘇為基礎的半導體層； 提供一第一電極，電氣接觸於該η型半導體層； 提供一第二電極，接觸於該Ρ型半導體層；及 形成一焊接墊，接觸於第二電極，其中，第一電極與 焊接墊包含實質相同的金屬材料，其包括鋁’且第一電極 與焊接墊係同時形成。 21.如申請專利範圍第20項之方法，其中，包含第一春 電極與焊接墊之金屬枒料更包含：鈀、鉑、或鎳之至少一 者。 22·如申請專利範圍第2〇項之方法，其中，形成第一 電極之步驟與形成焊接墊之步驟包含： 同呀形成其為直接接觸於η型氮化鎵為基礎的半導體 層之弟-電極之-第-層的&、翻或鎳、以及其為直接接 觸於第二電極之焊接墊之一第一層的把、顧或錄；及_同時形成其為接觸於η型氮化鎵為基礎的半導體層之 "θ上的鋁層、以及其為接觸於第二電極之第一層上 的一紹層。 23·如申請專利範圍第22 電極之步驟與形成焊接墊之步 於各個鋁層上。 項之方法，其中，形成第一 驟更包含：同時形成一金層 24.如申請專利範圍第23項之方法，其中，形成第 :之步驟與形成焊接墊之步驟更包含：$火該第一電 ’、干接墊，藉著加熱第一電極與焊接墊於至少約為攝 21 200400608 350度之一溫度。 25. —種氮化鎵為基礎之半導體裝置，包含： 一第一電極，電氣接觸於η型氮化鎵為基礎的半導體 層； 一第二電極，接觸於Ρ型氮化鎵為基礎的半導體層； 及 一焊接墊，接觸於第二電極，該焊接墊包含一金屬材 料，其包括鋁。 拾壹、圖式： 如次頁22
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-
2003
- 2003-06-17 WO PCT/US2003/019036 patent/WO2003107444A2/en not_active Application Discontinuation
- 2003-06-17 WO PCT/US2003/019035 patent/WO2003107443A2/en not_active Application Discontinuation
- 2003-06-17 AU AU2003251540A patent/AU2003251540A1/en not_active Abandoned
- 2003-06-17 AU AU2003251539A patent/AU2003251539A1/en not_active Abandoned
- 2003-06-17 TW TW092116486A patent/TW200400608A/zh unknown
- 2003-06-17 WO PCT/US2003/019034 patent/WO2003107442A2/en not_active Application Discontinuation
- 2003-06-17 TW TW092116487A patent/TW200401462A/zh unknown
- 2003-06-17 US US10/463,219 patent/US6847052B2/en not_active Expired - Fee Related
- 2003-06-17 AU AU2003251541A patent/AU2003251541A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI397196B (zh) * | 2007-11-20 | 2013-05-21 | Mitsubishi Electric Corp | 氮化物半導體發光元件之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200401462A (en) | 2004-01-16 |
| WO2003107444A3 (en) | 2004-09-02 |
| AU2003251539A1 (en) | 2003-12-31 |
| WO2003107443A2 (en) | 2003-12-24 |
| WO2003107442A3 (en) | 2004-09-02 |
| AU2003251540A1 (en) | 2003-12-31 |
| WO2003107444A2 (en) | 2003-12-24 |
| AU2003251541A8 (en) | 2003-12-31 |
| WO2003107443A3 (en) | 2004-09-02 |
| AU2003251541A1 (en) | 2003-12-31 |
| WO2003107442A2 (en) | 2003-12-24 |
| US20040077135A1 (en) | 2004-04-22 |
| US6847052B2 (en) | 2005-01-25 |
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