TR201908926T4 - Geliştirilmiş bulanıklığa sahip silisyumlu ince zar güneş pili ve bunun üretim yöntemi. - Google Patents

Geliştirilmiş bulanıklığa sahip silisyumlu ince zar güneş pili ve bunun üretim yöntemi. Download PDF

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Publication number
TR201908926T4
TR201908926T4 TR2019/08926T TR201908926T TR201908926T4 TR 201908926 T4 TR201908926 T4 TR 201908926T4 TR 2019/08926 T TR2019/08926 T TR 2019/08926T TR 201908926 T TR201908926 T TR 201908926T TR 201908926 T4 TR201908926 T4 TR 201908926T4
Authority
TR
Turkey
Prior art keywords
increasing
solar cell
flow rate
production method
silicon membrane
Prior art date
Application number
TR2019/08926T
Other languages
English (en)
Inventor
Lu Songwei
Original Assignee
Vitro Flat Glass Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vitro Flat Glass Llc filed Critical Vitro Flat Glass Llc
Publication of TR201908926T4 publication Critical patent/TR201908926T4/tr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Catalysts (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Bir üst katmana ve bir alt kaplama katmanına sahip olan bir kaplama yığınının bulanıklığını, bir kimyasal buhar biriktirme kaplama işlemi kullanarak arttırma yöntemi olup en az aşağıdakilerden birini içerir: başlatıcı akış oranını arttırma; bir taşıyıcı gaz akış oranını azaltma; bir substrat sıcaklığını arttırma; bir su akış oranını arttırma; bir egzoz akış oranını azaltma; ve üst katman veya alt kaplama katmanının en az birinin kalınlığını arttırma.
TR2019/08926T 2009-12-21 2010-12-06 Geliştirilmiş bulanıklığa sahip silisyumlu ince zar güneş pili ve bunun üretim yöntemi. TR201908926T4 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/643,299 US9224892B2 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved haze and methods of making the same

Publications (1)

Publication Number Publication Date
TR201908926T4 true TR201908926T4 (tr) 2019-07-22

Family

ID=44149391

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2019/08926T TR201908926T4 (tr) 2009-12-21 2010-12-06 Geliştirilmiş bulanıklığa sahip silisyumlu ince zar güneş pili ve bunun üretim yöntemi.

Country Status (12)

Country Link
US (1) US9224892B2 (tr)
EP (1) EP2517259B1 (tr)
JP (1) JP5607180B2 (tr)
KR (1) KR101511015B1 (tr)
BR (1) BR112012014980A2 (tr)
IN (1) IN2012DN05184A (tr)
MX (1) MX336541B (tr)
MY (1) MY159272A (tr)
RU (1) RU2526298C2 (tr)
TR (1) TR201908926T4 (tr)
TW (2) TWI524539B (tr)
WO (1) WO2011084292A2 (tr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112012029813A2 (pt) * 2010-05-26 2017-03-07 Univ Toledo estrutura de célula fotovoltaica, método para fazer uma camada de interface de dispersão de luz para uma célula fotovoltaica e estrutura de célula fotovoltaica (pv) tendo uma camada de interface de dispersão
CN102420260A (zh) * 2011-11-03 2012-04-18 同济大学 薄膜硅太阳能电池的背散射表面及其制备方法
KR101684446B1 (ko) * 2013-03-12 2016-12-08 비트로, 에스.에이.비. 데 씨.브이. 태양 전지용 고 헤이즈 하부층
MY176206A (en) * 2013-12-26 2020-07-24 Vitro Flat Glass Llc Organic light emitting diode with light extracting electrode
EP3075013B1 (en) * 2014-12-19 2021-08-18 Commonwealth Scientific and Industrial Research Organisation Process of forming a photoactive layer of an optoelectronic device
JP6773944B2 (ja) * 2016-01-06 2020-10-21 ｉｎＱｓ株式会社 光発電素子
WO2018010680A1 (en) * 2016-07-14 2018-01-18 The Hong Kong Polytechnic University Rose petal textured haze film for photovoltaic cells
CN111032591B (zh) 2017-08-31 2023-02-17 皮尔金顿集团有限公司 涂覆的玻璃制品、其制造方法，以及用其制成的光伏电池
EP3676416A1 (en) 2017-08-31 2020-07-08 Pilkington Group Limited Chemical vapor deposition process for forming a silicon oxide coating

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971843A (en) 1983-07-29 1990-11-20 Ppg Industries, Inc. Non-iridescent infrared-reflecting coated glass
US4746347A (en) 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
US4792536A (en) 1987-06-29 1988-12-20 Ppg Industries, Inc. Transparent infrared absorbing glass and method of making
US4853257A (en) 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
US5030594A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5030593A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5240886A (en) 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
DE69233396T2 (de) 1991-12-26 2005-01-13 Atofina Chemicals, Inc. Beschichtungszusammensetzung für Glas
US5599387A (en) 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
US5356718A (en) 1993-02-16 1994-10-18 Ppg Industries, Inc. Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates
FR2703999B1 (fr) * 1993-04-16 1995-05-24 Rhone Poulenc Chimie Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations.
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
EP1054454A3 (en) * 1999-05-18 2004-04-21 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP5068946B2 (ja) * 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
EP1677316A4 (en) 2003-10-23 2009-08-26 Bridgestone Corp TRANSPARENT CONDUCTIVE SUBSTRATE, ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL AND COLOR-SENSITIZED SOLAR CELL
US7781668B2 (en) 2004-03-25 2010-08-24 Kaneka Corporation Substrate for thin-film solar cell, method for producing the same, and thin-film solar cell employing it
JP2005311292A (ja) * 2004-03-25 2005-11-04 Kaneka Corp 薄膜太陽電池用基板、及びその製造方法、並びにそれを用いた薄膜太陽電池
JP2006032785A (ja) * 2004-07-20 2006-02-02 Sumco Corp Ｓｏｉ基板の製造方法及びｓｏｉ基板
US7431992B2 (en) * 2004-08-09 2008-10-07 Ppg Industries Ohio, Inc. Coated substrates that include an undercoating
JP3954085B2 (ja) * 2005-10-07 2007-08-08 シャープ株式会社 光電変換素子およびこれを用いた太陽電池
EP1950813A4 (en) * 2005-11-17 2010-07-21 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
US8097340B2 (en) * 2006-02-08 2012-01-17 Ppg Industries Ohio, Inc. Coated substrates having undercoating layers that exhibit improved photocatalytic activity
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
CN101904013B (zh) 2007-12-19 2013-05-08 欧瑞康太阳能(处贝区市)公司 用于获得沉积于高度纹理化基板上的高性能薄膜装置的方法
JP5280708B2 (ja) * 2008-03-06 2013-09-04 シャープ株式会社 太陽電池モジュール

Also Published As

Publication number Publication date
US20110146767A1 (en) 2011-06-23
US9224892B2 (en) 2015-12-29
JP5607180B2 (ja) 2014-10-15
JP2013515373A (ja) 2013-05-02
TWI524539B (zh) 2016-03-01
BR112012014980A2 (pt) 2016-04-05
WO2011084292A2 (en) 2011-07-14
MY159272A (en) 2016-12-30
WO2011084292A3 (en) 2011-09-09
KR20120096099A (ko) 2012-08-29
RU2526298C2 (ru) 2014-08-20
TW201138125A (en) 2011-11-01
MX2012006821A (es) 2012-07-23
EP2517259A2 (en) 2012-10-31
EP2517259B1 (en) 2019-04-17
KR101511015B1 (ko) 2015-04-13
CN102652365A (zh) 2012-08-29
IN2012DN05184A (tr) 2015-10-23
TW201631785A (zh) 2016-09-01
MX336541B (es) 2016-01-22
RU2012131142A (ru) 2014-01-27

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