MX2012006821A - Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. - Google Patents
Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.Info
- Publication number
- MX2012006821A MX2012006821A MX2012006821A MX2012006821A MX2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A
- Authority
- MX
- Mexico
- Prior art keywords
- increasing
- making
- methods
- thin film
- solar cell
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
- Catalysts (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Un método para aumentar la turbidez de un apilamiento de recubrimiento que tiene una capa superior y una capa de sub-recubrimiento usando un proceso de recubrimiento por deposición química en fase vapor que incluye, al menos, uno de: aumentar un caudal de precursor; disminuir un caudal de gas portador; aumentar una temperatura de sustrato; aumentar un caudal de agua; disminuir un caudal de escape; y aumentar un espesor de al menos una de la capa superior o capa de sub-recubrimiento.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/643,299 US9224892B2 (en) | 2009-12-21 | 2009-12-21 | Silicon thin film solar cell having improved haze and methods of making the same |
PCT/US2010/059037 WO2011084292A2 (en) | 2009-12-21 | 2010-12-06 | Silicon thin film solar cell having improved haze and methods of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2012006821A true MX2012006821A (es) | 2012-07-23 |
MX336541B MX336541B (es) | 2016-01-22 |
Family
ID=44149391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2012006821A MX336541B (es) | 2009-12-21 | 2010-12-06 | Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. |
Country Status (12)
Country | Link |
---|---|
US (1) | US9224892B2 (es) |
EP (1) | EP2517259B1 (es) |
JP (1) | JP5607180B2 (es) |
KR (1) | KR101511015B1 (es) |
BR (1) | BR112012014980A2 (es) |
IN (1) | IN2012DN05184A (es) |
MX (1) | MX336541B (es) |
MY (1) | MY159272A (es) |
RU (1) | RU2526298C2 (es) |
TR (1) | TR201908926T4 (es) |
TW (2) | TWI524539B (es) |
WO (1) | WO2011084292A2 (es) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112012029813A2 (pt) * | 2010-05-26 | 2017-03-07 | Univ Toledo | estrutura de célula fotovoltaica, método para fazer uma camada de interface de dispersão de luz para uma célula fotovoltaica e estrutura de célula fotovoltaica (pv) tendo uma camada de interface de dispersão |
CN102420260A (zh) * | 2011-11-03 | 2012-04-18 | 同济大学 | 薄膜硅太阳能电池的背散射表面及其制备方法 |
JP6267316B2 (ja) * | 2013-03-12 | 2018-01-24 | ビトロ、エセ.ア.ベ. デ セ.ウベ. | 太陽電池用の高ヘイズ下層 |
US9627652B2 (en) | 2013-12-26 | 2017-04-18 | Vitro, S.A.B. De C.V. | Organic light emitting diode with light extracting electrode |
KR102098123B1 (ko) | 2014-12-19 | 2020-04-08 | 커먼웰쓰 사이언티픽 앤 인더스트리알 리서치 오거니제이션 | 광전자 장치의 광활성 층을 형성하는 공정 |
JP6773944B2 (ja) * | 2016-01-06 | 2020-10-21 | inQs株式会社 | 光発電素子 |
WO2018010680A1 (en) * | 2016-07-14 | 2018-01-18 | The Hong Kong Polytechnic University | Rose petal textured haze film for photovoltaic cells |
JP7376470B2 (ja) | 2017-08-31 | 2023-11-08 | ピルキントン グループ リミテッド | 酸化ケイ素コーティングを形成するための化学気相堆積プロセス |
WO2019043398A1 (en) | 2017-08-31 | 2019-03-07 | Pilkington Group Limited | COATED GLASS ARTICLE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC CELL MADE THEREWITH |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4971843A (en) * | 1983-07-29 | 1990-11-20 | Ppg Industries, Inc. | Non-iridescent infrared-reflecting coated glass |
US4746347A (en) * | 1987-01-02 | 1988-05-24 | Ppg Industries, Inc. | Patterned float glass method |
US4792536A (en) * | 1987-06-29 | 1988-12-20 | Ppg Industries, Inc. | Transparent infrared absorbing glass and method of making |
US4853257A (en) * | 1987-09-30 | 1989-08-01 | Ppg Industries, Inc. | Chemical vapor deposition of tin oxide on float glass in the tin bath |
US5030594A (en) * | 1990-06-29 | 1991-07-09 | Ppg Industries, Inc. | Highly transparent, edge colored glass |
US5030593A (en) * | 1990-06-29 | 1991-07-09 | Ppg Industries, Inc. | Lightly tinted glass compatible with wood tones |
US5240886A (en) * | 1990-07-30 | 1993-08-31 | Ppg Industries, Inc. | Ultraviolet absorbing, green tinted glass |
US5393593A (en) * | 1990-10-25 | 1995-02-28 | Ppg Industries, Inc. | Dark gray, infrared absorbing glass composition and coated glass for privacy glazing |
DK0927706T3 (da) | 1991-12-26 | 2004-12-06 | Atofina Chem Inc | Belægningspræparater til glas |
US5599387A (en) | 1993-02-16 | 1997-02-04 | Ppg Industries, Inc. | Compounds and compositions for coating glass with silicon oxide |
US5356718A (en) * | 1993-02-16 | 1994-10-18 | Ppg Industries, Inc. | Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates |
FR2703999B1 (fr) * | 1993-04-16 | 1995-05-24 | Rhone Poulenc Chimie | Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations. |
US5536718A (en) | 1995-01-17 | 1996-07-16 | American Cyanamid Company | Tricyclic benzazepine vasopressin antagonists |
US5714199A (en) * | 1995-06-07 | 1998-02-03 | Libbey-Owens-Ford Co. | Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article |
DE19713215A1 (de) | 1997-03-27 | 1998-10-08 | Forschungszentrum Juelich Gmbh | Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle |
EP1054454A3 (en) * | 1999-05-18 | 2004-04-21 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same |
JP3513592B2 (ja) * | 2000-09-25 | 2004-03-31 | 独立行政法人産業技術総合研究所 | 太陽電池の製造方法 |
JP2002260448A (ja) * | 2000-11-21 | 2002-09-13 | Nippon Sheet Glass Co Ltd | 導電膜、その製造方法、それを備えた基板および光電変換装置 |
JP4229606B2 (ja) * | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
EP1624494A4 (en) * | 2003-05-13 | 2007-10-10 | Asahi Glass Co Ltd | TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR BATTERY AND PROCESS FOR PRODUCING THE SAME |
JPWO2005041216A1 (ja) | 2003-10-23 | 2007-11-29 | 株式会社ブリヂストン | 透明導電性基板、色素増感型太陽電池用電極及び色素増感型太陽電池 |
JP2005311292A (ja) * | 2004-03-25 | 2005-11-04 | Kaneka Corp | 薄膜太陽電池用基板、及びその製造方法、並びにそれを用いた薄膜太陽電池 |
EP1732139B1 (en) | 2004-03-25 | 2018-12-12 | Kaneka Corporation | Method for producing a substrate for thin-film solar cell |
JP2006032785A (ja) * | 2004-07-20 | 2006-02-02 | Sumco Corp | Soi基板の製造方法及びsoi基板 |
US7431992B2 (en) * | 2004-08-09 | 2008-10-07 | Ppg Industries Ohio, Inc. | Coated substrates that include an undercoating |
JP3954085B2 (ja) * | 2005-10-07 | 2007-08-08 | シャープ株式会社 | 光電変換素子およびこれを用いた太陽電池 |
KR20080074086A (ko) * | 2005-11-17 | 2008-08-12 | 아사히 가라스 가부시키가이샤 | 태양 전지용 투명 도전성 기판 및 그 제조 방법 |
US8097340B2 (en) * | 2006-02-08 | 2012-01-17 | Ppg Industries Ohio, Inc. | Coated substrates having undercoating layers that exhibit improved photocatalytic activity |
FR2911130B1 (fr) * | 2007-01-05 | 2009-11-27 | Saint Gobain | Procede de depot de couche mince et produit obtenu |
US8981200B2 (en) | 2007-12-19 | 2015-03-17 | Tel Solar Ag | Method for obtaining high performance thin film devices deposited on highly textured substrates |
JP5280708B2 (ja) * | 2008-03-06 | 2013-09-04 | シャープ株式会社 | 太陽電池モジュール |
-
2009
- 2009-12-21 US US12/643,299 patent/US9224892B2/en active Active
-
2010
- 2010-12-06 BR BR112012014980A patent/BR112012014980A2/pt not_active IP Right Cessation
- 2010-12-06 RU RU2012131142/28A patent/RU2526298C2/ru active
- 2010-12-06 MY MYPI2012002664A patent/MY159272A/en unknown
- 2010-12-06 MX MX2012006821A patent/MX336541B/es unknown
- 2010-12-06 TR TR2019/08926T patent/TR201908926T4/tr unknown
- 2010-12-06 KR KR20127019156A patent/KR101511015B1/ko active IP Right Grant
- 2010-12-06 WO PCT/US2010/059037 patent/WO2011084292A2/en active Application Filing
- 2010-12-06 EP EP10787980.1A patent/EP2517259B1/en active Active
- 2010-12-06 JP JP2012545991A patent/JP5607180B2/ja active Active
- 2010-12-21 TW TW099145060A patent/TWI524539B/zh not_active IP Right Cessation
- 2010-12-21 TW TW104138278A patent/TW201631785A/zh unknown
-
2012
- 2012-06-12 IN IN5184DEN2012 patent/IN2012DN05184A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2013515373A (ja) | 2013-05-02 |
KR20120096099A (ko) | 2012-08-29 |
MY159272A (en) | 2016-12-30 |
RU2526298C2 (ru) | 2014-08-20 |
TWI524539B (zh) | 2016-03-01 |
TW201138125A (en) | 2011-11-01 |
TR201908926T4 (tr) | 2019-07-22 |
CN102652365A (zh) | 2012-08-29 |
IN2012DN05184A (es) | 2015-10-23 |
EP2517259A2 (en) | 2012-10-31 |
TW201631785A (zh) | 2016-09-01 |
MX336541B (es) | 2016-01-22 |
RU2012131142A (ru) | 2014-01-27 |
WO2011084292A2 (en) | 2011-07-14 |
US9224892B2 (en) | 2015-12-29 |
US20110146767A1 (en) | 2011-06-23 |
WO2011084292A3 (en) | 2011-09-09 |
JP5607180B2 (ja) | 2014-10-15 |
BR112012014980A2 (pt) | 2016-04-05 |
KR101511015B1 (ko) | 2015-04-13 |
EP2517259B1 (en) | 2019-04-17 |
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