MX2012006821A - Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. - Google Patents

Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Info

Publication number
MX2012006821A
MX2012006821A MX2012006821A MX2012006821A MX2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A MX 2012006821 A MX2012006821 A MX 2012006821A
Authority
MX
Mexico
Prior art keywords
increasing
making
methods
thin film
solar cell
Prior art date
Application number
MX2012006821A
Other languages
English (en)
Other versions
MX336541B (es
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of MX2012006821A publication Critical patent/MX2012006821A/es
Publication of MX336541B publication Critical patent/MX336541B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)

Abstract

Un método para aumentar la turbidez de un apilamiento de recubrimiento que tiene una capa superior y una capa de sub-recubrimiento usando un proceso de recubrimiento por deposición química en fase vapor que incluye, al menos, uno de: aumentar un caudal de precursor; disminuir un caudal de gas portador; aumentar una temperatura de sustrato; aumentar un caudal de agua; disminuir un caudal de escape; y aumentar un espesor de al menos una de la capa superior o capa de sub-recubrimiento.
MX2012006821A 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma. MX336541B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,299 US9224892B2 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved haze and methods of making the same
PCT/US2010/059037 WO2011084292A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved haze and methods of making the same

Publications (2)

Publication Number Publication Date
MX2012006821A true MX2012006821A (es) 2012-07-23
MX336541B MX336541B (es) 2016-01-22

Family

ID=44149391

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012006821A MX336541B (es) 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene turbidez mejorada y metodos de fabricacion de la misma.

Country Status (12)

Country Link
US (1) US9224892B2 (es)
EP (1) EP2517259B1 (es)
JP (1) JP5607180B2 (es)
KR (1) KR101511015B1 (es)
BR (1) BR112012014980A2 (es)
IN (1) IN2012DN05184A (es)
MX (1) MX336541B (es)
MY (1) MY159272A (es)
RU (1) RU2526298C2 (es)
TR (1) TR201908926T4 (es)
TW (2) TWI524539B (es)
WO (1) WO2011084292A2 (es)

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BR112012029813A2 (pt) * 2010-05-26 2017-03-07 Univ Toledo estrutura de célula fotovoltaica, método para fazer uma camada de interface de dispersão de luz para uma célula fotovoltaica e estrutura de célula fotovoltaica (pv) tendo uma camada de interface de dispersão
CN102420260A (zh) * 2011-11-03 2012-04-18 同济大学 薄膜硅太阳能电池的背散射表面及其制备方法
KR101684446B1 (ko) * 2013-03-12 2016-12-08 비트로, 에스.에이.비. 데 씨.브이. 태양 전지용 고 헤이즈 하부층
MY176206A (en) * 2013-12-26 2020-07-24 Vitro Flat Glass Llc Organic light emitting diode with light extracting electrode
EP3075013B1 (en) * 2014-12-19 2021-08-18 Commonwealth Scientific and Industrial Research Organisation Process of forming a photoactive layer of an optoelectronic device
JP6773944B2 (ja) * 2016-01-06 2020-10-21 ｉｎＱｓ株式会社 光発電素子
WO2018010680A1 (en) * 2016-07-14 2018-01-18 The Hong Kong Polytechnic University Rose petal textured haze film for photovoltaic cells
CN111032591B (zh) 2017-08-31 2023-02-17 皮尔金顿集团有限公司 涂覆的玻璃制品、其制造方法，以及用其制成的光伏电池
EP3676416A1 (en) 2017-08-31 2020-07-08 Pilkington Group Limited Chemical vapor deposition process for forming a silicon oxide coating

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US4746347A (en) 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
US4792536A (en) 1987-06-29 1988-12-20 Ppg Industries, Inc. Transparent infrared absorbing glass and method of making
US4853257A (en) 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
US5030594A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5030593A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5240886A (en) 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
DE69233396T2 (de) 1991-12-26 2005-01-13 Atofina Chemicals, Inc. Beschichtungszusammensetzung für Glas
US5599387A (en) 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
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FR2703999B1 (fr) * 1993-04-16 1995-05-24 Rhone Poulenc Chimie Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations.
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
EP1054454A3 (en) * 1999-05-18 2004-04-21 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
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Also Published As

Publication number Publication date
US20110146767A1 (en) 2011-06-23
US9224892B2 (en) 2015-12-29
JP5607180B2 (ja) 2014-10-15
JP2013515373A (ja) 2013-05-02
TWI524539B (zh) 2016-03-01
BR112012014980A2 (pt) 2016-04-05
WO2011084292A2 (en) 2011-07-14
MY159272A (en) 2016-12-30
WO2011084292A3 (en) 2011-09-09
KR20120096099A (ko) 2012-08-29
RU2526298C2 (ru) 2014-08-20
TR201908926T4 (tr) 2019-07-22
TW201138125A (en) 2011-11-01
EP2517259A2 (en) 2012-10-31
EP2517259B1 (en) 2019-04-17
KR101511015B1 (ko) 2015-04-13
CN102652365A (zh) 2012-08-29
IN2012DN05184A (es) 2015-10-23
TW201631785A (zh) 2016-09-01
MX336541B (es) 2016-01-22
RU2012131142A (ru) 2014-01-27

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