SU1086997A1 - Method of one-sided etching of semiconductor wafers - Google Patents

Method of one-sided etching of semiconductor wafers

Info

Publication number
SU1086997A1
SU1086997A1 SU3364734/25A SU3364734A SU1086997A1 SU 1086997 A1 SU1086997 A1 SU 1086997A1 SU 3364734/25 A SU3364734/25 A SU 3364734/25A SU 3364734 A SU3364734 A SU 3364734A SU 1086997 A1 SU1086997 A1 SU 1086997A1
Authority
SU
USSR - Soviet Union
Prior art keywords
layer
thick
film
polymeric material
protective coating
Prior art date
Application number
SU3364734/25A
Other languages
Russian (ru)
Inventor
В.Л. Романов
Г.В. Нечаев
А.А. Чернявский
Original Assignee
В.Л. Романов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by В.Л. Романов filed Critical В.Л. Романов
Priority to SU3364734/25A priority Critical patent/SU1086997A1/en
Application granted granted Critical
Publication of SU1086997A1 publication Critical patent/SU1086997A1/en

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Abstract

FIELD: semiconductor technology. SUBSTANCE: the method of one-sided etching of semiconductor wafers includes application of protective coating onto the working side of the wafer, thinning of it by chemical or mechanical treatment, removal of the protective coating; the method is featured by the fact that the protective coating is applied in three layers so as to prevent damage to wafers and increase the percentage of yield of serviceable wagers; the first layer consists of polymeric material that is soluble in organic solvents, the second layer consists of metal, and the third layer - of another polymeric material, which is chemically resistant to the solvents of the first one, and removal of the coating is accomplished by the solvent of the first polymeric material. A film of negative photoresist, 0.8 to 1.0-um thick, is used as the first layer, a film of metal, 0.4 to 0.5-um thick, is used as the second layer, and a film of varnish, 50 to 80-um thick, is used as the third layer. EFFECT: improved quality.
SU3364734/25A 1981-12-11 1981-12-11 Method of one-sided etching of semiconductor wafers SU1086997A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3364734/25A SU1086997A1 (en) 1981-12-11 1981-12-11 Method of one-sided etching of semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3364734/25A SU1086997A1 (en) 1981-12-11 1981-12-11 Method of one-sided etching of semiconductor wafers

Publications (1)

Publication Number Publication Date
SU1086997A1 true SU1086997A1 (en) 1996-08-10

Family

ID=60524432

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3364734/25A SU1086997A1 (en) 1981-12-11 1981-12-11 Method of one-sided etching of semiconductor wafers

Country Status (1)

Country Link
SU (1) SU1086997A1 (en)

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