SG98424A1 - Dicing method - Google Patents

Dicing method

Info

Publication number
SG98424A1
SG98424A1 SG200005089A SG200005089A SG98424A1 SG 98424 A1 SG98424 A1 SG 98424A1 SG 200005089 A SG200005089 A SG 200005089A SG 200005089 A SG200005089 A SG 200005089A SG 98424 A1 SG98424 A1 SG 98424A1
Authority
SG
Singapore
Prior art keywords
dicing method
dicing
Prior art date
Application number
SG200005089A
Other languages
English (en)
Inventor
Fujimoto Kouji
Tateishi Toshiyuki
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG98424A1 publication Critical patent/SG98424A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/024—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with the stock carried by a movable support for feeding stock into engagement with the cutting blade, e.g. stock carried by a pivoted arm or a carriage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
SG200005089A 1999-09-14 2000-09-07 Dicing method SG98424A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26033399A JP4347960B2 (ja) 1999-09-14 1999-09-14 ダイシング方法

Publications (1)

Publication Number Publication Date
SG98424A1 true SG98424A1 (en) 2003-09-19

Family

ID=17346544

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200005089A SG98424A1 (en) 1999-09-14 2000-09-07 Dicing method

Country Status (5)

Country Link
US (1) US6498075B1 (ja)
JP (1) JP4347960B2 (ja)
DE (1) DE10044463B4 (ja)
SG (1) SG98424A1 (ja)
TW (1) TW490752B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4731050B2 (ja) * 2001-06-15 2011-07-20 株式会社ディスコ 半導体ウエーハの加工方法
JP3621908B2 (ja) * 2001-10-11 2005-02-23 松下電器産業株式会社 ベアチップ実装方法および実装システム
US6703318B1 (en) * 2002-10-29 2004-03-09 Silicon Storage Technology, Inc. Method of planarizing a semiconductor die
JP4408361B2 (ja) * 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
JP2006073690A (ja) * 2004-09-01 2006-03-16 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4018096B2 (ja) * 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
JP2006140341A (ja) 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd ウエーハの分割方法
JP4571870B2 (ja) * 2005-02-02 2010-10-27 株式会社ディスコ 露光装置
JP4677331B2 (ja) 2005-11-30 2011-04-27 エルピーダメモリ株式会社 島状の分散構造を備えた半導体チップおよびその製造方法
JP2008060164A (ja) * 2006-08-29 2008-03-13 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
JP2008105114A (ja) * 2006-10-24 2008-05-08 Disco Abrasive Syst Ltd ハブブレードおよび切削装置
US8053279B2 (en) * 2007-06-19 2011-11-08 Micron Technology, Inc. Methods and systems for imaging and cutting semiconductor wafers and other semiconductor workpieces
TW201007830A (en) * 2008-08-15 2010-02-16 Zen Voce Corp Jump-cut method for arrayed workpiece
JP5672242B2 (ja) 2009-12-24 2015-02-18 株式会社村田製作所 電子部品の製造方法
JP6066591B2 (ja) * 2012-06-12 2017-01-25 株式会社ディスコ 切削方法
CN104108139B (zh) * 2013-04-18 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种mems晶圆的切割方法
JP6211884B2 (ja) * 2013-10-10 2017-10-11 株式会社ディスコ ウェーハの加工方法
JP2016127232A (ja) * 2015-01-08 2016-07-11 株式会社ディスコ ウェーハの加工方法
JP7258416B2 (ja) 2018-12-06 2023-04-17 株式会社ディスコ 被加工物の加工方法、デバイスチップの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177975A (ja) * 1996-10-18 1998-06-30 Fujitsu Ltd ダイシングブレード、前記ダイシングブレードを使ったダイシング方法、および半導体装置の製造方法
US5913104A (en) * 1996-11-26 1999-06-15 Micron Technology, Inc. Method and apparatus to hold integrated circuit chips onto a chuck and to simultaneously remove multiple integrated circuit chips from a cutting chuck
US6150240A (en) * 1998-07-27 2000-11-21 Motorola, Inc. Method and apparatus for singulating semiconductor devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0186201B1 (en) * 1984-12-27 1992-12-30 Disco Abrasive Systems, Ltd. Semiconductor wafer dicing machine
US4787362A (en) * 1986-10-20 1988-11-29 Thermocarbon, Inc. Abrasive blade having a polycrystalline ceramic core
US5952725A (en) * 1996-02-20 1999-09-14 Micron Technology, Inc. Stacked semiconductor devices
US6250192B1 (en) * 1996-11-12 2001-06-26 Micron Technology, Inc. Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
JPH1140521A (ja) * 1997-05-20 1999-02-12 Seiko Instr Inc 半導体チップの製造方法
SG99277A1 (en) * 1998-02-05 2003-10-27 Texas Instr Singapore Pte Ltd Partial semionductor wafer processing with multiple cuts of random sizes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177975A (ja) * 1996-10-18 1998-06-30 Fujitsu Ltd ダイシングブレード、前記ダイシングブレードを使ったダイシング方法、および半導体装置の製造方法
US5913104A (en) * 1996-11-26 1999-06-15 Micron Technology, Inc. Method and apparatus to hold integrated circuit chips onto a chuck and to simultaneously remove multiple integrated circuit chips from a cutting chuck
US6150240A (en) * 1998-07-27 2000-11-21 Motorola, Inc. Method and apparatus for singulating semiconductor devices

Also Published As

Publication number Publication date
DE10044463A1 (de) 2001-06-07
TW490752B (en) 2002-06-11
JP2001085365A (ja) 2001-03-30
JP4347960B2 (ja) 2009-10-21
DE10044463B4 (de) 2009-07-09
US6498075B1 (en) 2002-12-24

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