JP7258416B2 - 被加工物の加工方法、デバイスチップの製造方法 - Google Patents
被加工物の加工方法、デバイスチップの製造方法 Download PDFInfo
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- JP7258416B2 JP7258416B2 JP2018229005A JP2018229005A JP7258416B2 JP 7258416 B2 JP7258416 B2 JP 7258416B2 JP 2018229005 A JP2018229005 A JP 2018229005A JP 2018229005 A JP2018229005 A JP 2018229005A JP 7258416 B2 JP7258416 B2 JP 7258416B2
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Weting (AREA)
Description
1a 表面
1b 裏面
1c 加工溝
1d チップ
3 分割予定ライン
5 デバイス
7 金属膜
9 テープ
11 フレーム
11a 開口
13 フレームユニット
2 レーザ加工装置
4 基台
4a 開口部
6 突出部
6a カセット載置台
8 カセット
10 搬送ユニット
12 搬送レール
14,22 ガイドレール
16,24 移動テーブル
18,26 ボールねじ
20 パルスモータ
28 チャックテーブル
28a 保持面
28b クランプ
30 立設部
32 支持部
34 レーザ加工ユニット
34a 加工ヘッド
34b レーザビーム
36 撮像ユニット
38 保護膜塗布兼洗浄ユニット
40 ノズル
40a 液状樹脂
40b 保護膜
42 テーブル
44 拡張装置
46 フレーム保持ユニット
48 フレーム支持台
50 クランプ
52 ロッド
54 拡張ドラム
56 ウエットエッチング装置
58 エッチング槽
60 エッチング液
Claims (7)
- 分割予定ラインが設定された被加工物を該分割予定ラインに沿って分割してチップを形成する被加工物の加工方法であって、
該被加工物の表面及び裏面の一方に貼着された伸長性を有するテープと、開口を有し該開口を囲む環状領域に該テープの外周部が貼着された環状のフレームと、該被加工物と、を備えるフレームユニットを準備するフレームユニット準備ステップと、
該被加工物の該表面及び該裏面の他方に液状樹脂を塗布して保護膜を形成する保護膜形成ステップと、
該保護膜形成ステップの後、該分割予定ラインに沿って該被加工物にレーザビームを照射することにより該分割予定ラインに沿って該被加工物を切断する切断ステップと、
該切断ステップの後、該被加工物に貼着された該テープを径方向外側に拡張し、該被加工物が切断されて形成された各チップ間の間隔を広げる間隔拡張ステップと、
該間隔拡張ステップの後、該切断ステップにおける該レーザビームの照射により該各チップの切断面に形成された変質領域をウエットエッチングにより除去するエッチングステップと、
を備えることを特徴とする被加工物の加工方法。 - 互いに交差する複数の分割予定ラインが設定され、該分割予定ラインによって区画された各領域において表面にデバイスが形成されたウェーハを該分割予定ラインに沿って分割してデバイスチップを製造するデバイスチップの製造方法であって、
該ウェーハの該表面及び裏面の一方に貼着された伸長性を有するテープと、開口を有し該開口を囲む環状領域に該テープの外周部が貼着された環状のフレームと、該ウェーハと、を備えるフレームユニットを準備するフレームユニット準備ステップと、
該ウェーハの該表面及び該裏面の他方に液状樹脂を塗布して保護膜を形成する保護膜形成ステップと、
該保護膜形成ステップの後、該分割予定ラインに沿って該ウェーハにレーザビームを照射することにより該分割予定ラインに沿って該ウェーハを切断して個々のデバイスチップを形成する切断ステップと、
該切断ステップの後、該テープを径方向外側に拡張し、切断ステップで形成された各デバイスチップ間の間隔を広げる間隔拡張ステップと、
該間隔拡張ステップの後、該切断ステップにおける該レーザビームの照射により該デバイスチップの切断面に形成された変質領域をウエットエッチングにより除去するエッチングステップと、
を備えることを特徴とするデバイスチップの製造方法。 - 該ウェーハは、該保護膜形成ステップにおいて該保護膜が形成される該表面及び該裏面の該他方に、該ウエットエッチングに耐性を有する耐性層を有し、
該保護膜形成ステップにおいて形成される該保護膜は水溶性を有し、
該切断ステップにおいて該ウェーハに照射される該レーザビームは、該ウェーハに対して吸収性を有する波長のレーザビームであり、
該切断ステップでは、該レーザビームによるアブレーション加工により該ウェーハが切断され、
該エッチングステップでは、該ウエットエッチングにより該保護膜が除去されることを特徴とする請求項2に記載のデバイスチップの製造方法。 - 該保護膜は、該ウエットエッチングに耐性を有し、
該エッチングステップでは、該ウェーハの該表面及び該裏面の該他方が該保護膜により該ウエットエッチングから保護されることを特徴とする請求項2に記載のデバイスチップの製造方法。 - 該保護膜形成ステップは、
該ウェーハの該表面及び該裏面の該他方に該液状樹脂として水溶性の保護膜の材料となる液状樹脂を塗布する第1の塗布ステップと、
該第1の塗布ステップの後に、該ウェーハの該表面及び該裏面の該他方に非水溶性の保護膜の材料となる液状樹脂を塗布する第2の塗布ステップと、
を含むことを特徴とする請求項2に記載のデバイスチップの製造方法。 - 該ウェーハは、GaAsを含むことを特徴とする請求項2乃至5のいずれかに記載のデバイスチップの製造方法。
- 該ウェーハは、該裏面に金属膜が形成されていることを特徴とする請求項2乃至6のいずれかに記載のデバイスチップの製造方法。
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CN201911219424.6A CN111293083B (zh) | 2018-12-06 | 2019-12-03 | 被加工物的加工方法、器件芯片的制造方法 |
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