SG92720A1 - Method and apparatus for etching silicon - Google Patents

Method and apparatus for etching silicon

Info

Publication number
SG92720A1
SG92720A1 SG200003820A SG200003820A SG92720A1 SG 92720 A1 SG92720 A1 SG 92720A1 SG 200003820 A SG200003820 A SG 200003820A SG 200003820 A SG200003820 A SG 200003820A SG 92720 A1 SG92720 A1 SG 92720A1
Authority
SG
Singapore
Prior art keywords
etching silicon
etching
silicon
Prior art date
Application number
SG200003820A
Other languages
English (en)
Inventor
Yoneya Akira
Kobayashi Noriyuki
Izuta Nobuhiko
Original Assignee
Nisso Engineering Co Ltd
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nisso Engineering Co Ltd, Disco Corp filed Critical Nisso Engineering Co Ltd
Publication of SG92720A1 publication Critical patent/SG92720A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
SG200003820A 1999-07-14 2000-07-10 Method and apparatus for etching silicon SG92720A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19986999 1999-07-14

Publications (1)

Publication Number Publication Date
SG92720A1 true SG92720A1 (en) 2002-11-19

Family

ID=16414997

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200003820A SG92720A1 (en) 1999-07-14 2000-07-10 Method and apparatus for etching silicon

Country Status (6)

Country Link
US (1) US6444589B1 (ko)
EP (1) EP1069598B1 (ko)
KR (1) KR100483465B1 (ko)
DE (1) DE60034274T2 (ko)
SG (1) SG92720A1 (ko)
TW (1) TW460932B (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6516816B1 (en) 1999-04-08 2003-02-11 Applied Materials, Inc. Spin-rinse-dryer
SG92720A1 (en) * 1999-07-14 2002-11-19 Nisso Engineering Co Ltd Method and apparatus for etching silicon
TW511180B (en) * 2000-07-31 2002-11-21 Mitsubishi Chem Corp Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device
WO2003017337A1 (en) * 2001-08-14 2003-02-27 Applied Materials, Inc. Shield for capturing fluids displaced from a substrate
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
DE20321702U1 (de) * 2003-05-07 2008-12-24 Universität Konstanz Vorrichtung zum Texturieren von Oberflächen von Silizium-Scheiben
US7077974B2 (en) * 2003-05-30 2006-07-18 International Business Machines Corporation Fine-dimension masks and related processes
US20050266694A1 (en) * 2004-05-27 2005-12-01 Brask Justin K Controlling bubble formation during etching
TWI331775B (en) * 2005-05-17 2010-10-11 Apprecia Technology Inc Equipment and method for measuring silicon concentration in phosphoric acid solution
JP5122731B2 (ja) 2005-06-01 2013-01-16 信越半導体株式会社 貼り合わせウェーハの製造方法
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008108792A (ja) * 2006-10-23 2008-05-08 Disco Abrasive Syst Ltd ウエーハの加工方法
DE102007039626A1 (de) * 2007-08-22 2009-02-26 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
JP2009117653A (ja) * 2007-11-07 2009-05-28 Elpida Memory Inc 半導体装置及びその製造方法
CN102798260A (zh) * 2011-05-25 2012-11-28 J.T股份有限公司 电子部件蚀刻剂冷却装置
CN105142763B (zh) * 2013-04-25 2019-11-12 索尔维公司 用于纯化氢氟酸和硝酸的混合物的反渗透
DE102014013591A1 (de) 2014-09-13 2016-03-17 Jörg Acker Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität
JP6494807B2 (ja) * 2016-02-03 2019-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR102244118B1 (ko) * 2016-12-01 2021-04-26 오씨아이 주식회사 식각 후 식각 용액의 후처리 방법
KR102075784B1 (ko) 2019-10-28 2020-02-10 조순관 다기능 허리 벨트
JP7486372B2 (ja) * 2020-07-29 2024-05-17 東京エレクトロン株式会社 基板処理装置、及び基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971654A (en) * 1987-08-27 1990-11-20 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process and apparatus for etching semiconductor surfaces
EP0317210B1 (en) * 1987-11-18 1991-07-17 Shinko Pantec Co., Ltd. Process for recovering nitric acid and hydrofluoric acid from waste pickle liquors
US5266152A (en) * 1991-10-09 1993-11-30 Nissan Motor Co., Ltd. Method of etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025668A (ja) 1984-01-25 1985-02-08 岡田　国夫 Ｖ溝切削用回転刃
JPS61186488A (ja) * 1985-02-12 1986-08-20 Daido Steel Co Ltd 硝酸−弗酸液の回生方法
US4747907A (en) * 1986-10-29 1988-05-31 International Business Machines Corporation Metal etching process with etch rate enhancement
JPH05121390A (ja) 1991-10-29 1993-05-18 Koujiyundo Silicon Kk 酸の除去方法
KR0129924Y1 (ko) * 1992-05-13 1999-02-01 문정환 반도체 식각장치
JP3072876B2 (ja) * 1993-09-17 2000-08-07 日曹エンジニアリング株式会社 エッチング液の精製方法
US5632866A (en) * 1994-01-12 1997-05-27 Fsi International, Inc. Point-of-use recycling of wafer cleaning substances
SG92720A1 (en) * 1999-07-14 2002-11-19 Nisso Engineering Co Ltd Method and apparatus for etching silicon
JP2001085385A (ja) * 1999-07-14 2001-03-30 Nisso Engineering Co Ltd シリコンのエッチング方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971654A (en) * 1987-08-27 1990-11-20 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process and apparatus for etching semiconductor surfaces
EP0317210B1 (en) * 1987-11-18 1991-07-17 Shinko Pantec Co., Ltd. Process for recovering nitric acid and hydrofluoric acid from waste pickle liquors
US5266152A (en) * 1991-10-09 1993-11-30 Nissan Motor Co., Ltd. Method of etching

Also Published As

Publication number Publication date
EP1069598A1 (en) 2001-01-17
KR100483465B1 (ko) 2005-04-14
EP1069598B1 (en) 2007-04-11
DE60034274T2 (de) 2007-12-20
DE60034274D1 (de) 2007-05-24
US6444589B1 (en) 2002-09-03
TW460932B (en) 2001-10-21
KR20010021073A (ko) 2001-03-15

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