GB0018282D0 - An apparatus for and method of heating a wafer - Google Patents

An apparatus for and method of heating a wafer

Info

Publication number
GB0018282D0
GB0018282D0 GBGB0018282.4A GB0018282A GB0018282D0 GB 0018282 D0 GB0018282 D0 GB 0018282D0 GB 0018282 A GB0018282 A GB 0018282A GB 0018282 D0 GB0018282 D0 GB 0018282D0
Authority
GB
United Kingdom
Prior art keywords
wafer
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0018282.4A
Other versions
GB2352507A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0018282D0 publication Critical patent/GB0018282D0/en
Publication of GB2352507A publication Critical patent/GB2352507A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)
GB0018282A 1999-07-26 2000-07-25 A method and apparatus for heating a wafer Withdrawn GB2352507A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990030350A KR100351049B1 (en) 1999-07-26 1999-07-26 Wafer heating method and the device adopting the same

Publications (2)

Publication Number Publication Date
GB0018282D0 true GB0018282D0 (en) 2000-09-13
GB2352507A GB2352507A (en) 2001-01-31

Family

ID=36693973

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0018282A Withdrawn GB2352507A (en) 1999-07-26 2000-07-25 A method and apparatus for heating a wafer
GB0018386A Expired - Fee Related GB2352508B (en) 1999-07-26 2000-07-26 Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0018386A Expired - Fee Related GB2352508B (en) 1999-07-26 2000-07-26 Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer

Country Status (6)

Country Link
JP (2) JP2001093795A (en)
KR (1) KR100351049B1 (en)
CN (2) CN1193266C (en)
DE (2) DE10036183B4 (en)
GB (2) GB2352507A (en)
TW (2) TW428224B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3882141B2 (en) * 2002-06-13 2007-02-14 日鉱金属株式会社 Vapor growth apparatus and vapor growth method
US7170582B2 (en) * 2004-12-13 2007-01-30 Asml Netherlands B.V. Support device and lightographic apparatus
JP4657940B2 (en) * 2006-02-10 2011-03-23 東京エレクトロン株式会社 Substrate processing system
JP2007258303A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Substrate heat-treatment device
CN101495922B (en) * 2006-07-28 2012-12-12 迈普尔平版印刷Ip有限公司 Lithography system, method of heat dissipation and frame
US20080145038A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
US20080142208A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
NL2003258A1 (en) 2008-08-08 2010-02-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
TWI835063B (en) * 2016-07-28 2024-03-11 荷蘭商Ａｓｍｌ荷蘭公司 Substrate holding device, method for manufacturing such a device, and apparatus and method for processing or imaging a sample
US20180096867A1 (en) * 2016-09-30 2018-04-05 Momentive Performance Materials Inc. Heating apparatus with controlled thermal contact
JP6837202B2 (en) * 2017-01-23 2021-03-03 パナソニックＩｐマネジメント株式会社 Substrate heating device and method and manufacturing method of electronic device
CN108662930A (en) * 2017-09-28 2018-10-16 上海微电子装备（集团）股份有限公司 A kind of hot plate apparatus
CN108158039B (en) * 2018-01-03 2023-07-11 云南中烟工业有限责任公司 MEMS heating chip integrated with multiple Pt temperature sensors and manufacturing method thereof
CN108354228B (en) * 2018-01-03 2023-07-25 云南中烟工业有限责任公司 MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof
CN108185526B (en) * 2018-01-03 2023-09-01 云南中烟工业有限责任公司 MEMS heating chip integrated with diode temperature sensor and manufacturing method thereof
CN108158040B (en) * 2018-01-03 2023-11-21 云南中烟工业有限责任公司 MEMS electronic cigarette chip capable of uniformly heating and manufacturing method thereof
CN108538760B (en) * 2018-04-03 2020-11-27 德淮半导体有限公司 Hot plate structure
JP7477498B2 (en) * 2018-08-01 2024-05-01 モメンティブ パフォーマンス マテリアルズ インコーポレイテッド Removable thermal leveller
KR102236933B1 (en) * 2019-10-21 2021-04-05 정승수 Heat block for manufacturing semiconductor and display panel
US11487206B2 (en) * 2019-12-30 2022-11-01 Texas Instruments Incorporated Methods and apparatus for digital material deposition onto semiconductor wafers
JP7491556B2 (en) * 2020-06-23 2024-05-28 トクデン株式会社 Heat Transfer Plate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129018B (en) * 1982-08-30 1986-01-29 Ricoh Kk Vacuum evaporation apparatus
JPH06103670B2 (en) * 1989-04-04 1994-12-14 三菱電機株式会社 Semiconductor wafer heating device
DE3915039A1 (en) * 1989-05-08 1990-11-15 Balzers Hochvakuum LIFTING TABLE
JP2935867B2 (en) * 1990-03-28 1999-08-16 ホーヤ株式会社 Substrate heat treatment equipment
JP3119950B2 (en) * 1992-09-30 2000-12-25 株式会社東芝 Pattern formation method
JP2907687B2 (en) * 1993-06-10 1999-06-21 大日本スクリーン製造株式会社 Substrate heating device
JPH07152158A (en) * 1993-11-30 1995-06-16 Sigma Merutetsuku Kk Substrate heater
JP3614503B2 (en) * 1995-04-18 2005-01-26 富士写真フイルム株式会社 Heat treatment method and apparatus for photosensitive lithographic printing plate
JP3983831B2 (en) * 1995-05-30 2007-09-26 シグマメルテック株式会社 Substrate baking apparatus and substrate baking method
JPH10189611A (en) * 1996-12-24 1998-07-21 Sony Corp Device for heating semiconductor wafer
KR100339875B1 (en) * 1998-12-28 2002-10-11 (주) 대홍기업 Plate heating device

Also Published As

Publication number Publication date
CN1282005A (en) 2001-01-31
CN1249522C (en) 2006-04-05
GB0018386D0 (en) 2000-09-13
CN1282003A (en) 2001-01-31
DE10036001A1 (en) 2001-02-22
GB2352508B (en) 2003-10-08
KR100351049B1 (en) 2002-09-09
DE10036183A1 (en) 2001-02-01
TW428224B (en) 2001-04-01
TW473873B (en) 2002-01-21
CN1193266C (en) 2005-03-16
GB2352508A (en) 2001-01-31
KR20010011123A (en) 2001-02-15
GB2352507A (en) 2001-01-31
JP2001085324A (en) 2001-03-30
JP2001093795A (en) 2001-04-06
DE10036183B4 (en) 2004-06-17

Similar Documents

Publication Publication Date Title
GB0018282D0 (en) An apparatus for and method of heating a wafer
IL123575A0 (en) Method and apparatus for alignment of a wafer
GB9927127D0 (en) A method of manufacturing an item and apparatus for manufacturing an item
IL136037A0 (en) Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses
SG90167A1 (en) Method and apparatus for heating and cooling substrates
SG91256A1 (en) Method and apparatus for processing semiconductive wafers
SG90220A1 (en) Apparatus and method for robotic alignment of substrates
SG92720A1 (en) Method and apparatus for etching silicon
SG90177A1 (en) Apparatus and method for handling an integrated circuit
GB2346577B (en) An apparatus and a method for facilitating the connection of pipes
EP1152646A4 (en) Method and apparatus for plasma treatment
GB2347522B (en) Method and apparatus for process control of semiconductor device fabrication line
GB2357898B (en) Plasma process apparatus and plasma process method for substrate
HK1034779A1 (en) Electronic apparatus and method for controlling electronic apparatus
GB2357610B (en) Method and apparatus for generating numbers
AU4175800A (en) Method and apparatus for wafer metrology
SG87166A1 (en) Method for producing semiconductor device and apparatus usable therein
GB2359925B (en) Ion-implanting method and ion-implanting apparatus
EP1052688A4 (en) Method and apparatus for processing wafer
GB2362757B (en) Method and apparatus for manufacturing semiconductor device
PL340953A1 (en) Method of and apparatus for adapting electronic choppers
SG97160A1 (en) Placement system apparatus and method
GB2327534B (en) Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus
GB9917697D0 (en) An apparatus and method for facilitating the connection of pipes
GB2352900B (en) Positioning apparatus and method

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)