SG88742A1 - Storage device, data processing system and data writing and readout method - Google Patents

Storage device, data processing system and data writing and readout method

Info

Publication number
SG88742A1
SG88742A1 SG9803906A SG1998003906A SG88742A1 SG 88742 A1 SG88742 A1 SG 88742A1 SG 9803906 A SG9803906 A SG 9803906A SG 1998003906 A SG1998003906 A SG 1998003906A SG 88742 A1 SG88742 A1 SG 88742A1
Authority
SG
Singapore
Prior art keywords
data
management information
area management
storage device
data processing
Prior art date
Application number
SG9803906A
Other languages
English (en)
Inventor
Sassa Akira
Okaue Takumi
Hirabayashi Mitsuhiro
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG88742A1 publication Critical patent/SG88742A1/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751—Error or fault detection not based on redundancy
    • G06F11/0763—Error or fault detection not based on redundancy by bit configuration check, e.g. of formats or tags

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
SG9803906A 1997-09-30 1998-09-28 Storage device, data processing system and data writing and readout method SG88742A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26717297A JP3233079B2 (ja) 1997-09-30 1997-09-30 データ処理システム及びデータ処理方法

Publications (1)

Publication Number Publication Date
SG88742A1 true SG88742A1 (en) 2002-05-21

Family

ID=17441111

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9803906A SG88742A1 (en) 1997-09-30 1998-09-28 Storage device, data processing system and data writing and readout method

Country Status (8)

Country Link
US (3) US6460145B1 (de)
EP (1) EP0907128B1 (de)
JP (1) JP3233079B2 (de)
KR (1) KR100527609B1 (de)
DE (1) DE69821426T2 (de)
ID (1) ID20972A (de)
SG (1) SG88742A1 (de)
TW (1) TW389890B (de)

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JP4505870B2 (ja) 1999-03-31 2010-07-21 ソニー株式会社 記録再生装置
JP2001025053A (ja) 1999-07-09 2001-01-26 Mitsubishi Electric Corp 携帯電話のメモリシステム
US6701451B1 (en) * 2000-08-11 2004-03-02 Emc Corporation Selective correction of data errors
JP4323707B2 (ja) * 2000-10-25 2009-09-02 富士通マイクロエレクトロニクス株式会社 フラッシュメモリの欠陥管理方法
JP4059472B2 (ja) * 2001-08-09 2008-03-12 株式会社ルネサステクノロジ メモリカード及びメモリコントローラ
US20030056141A1 (en) * 2001-09-18 2003-03-20 Lai Chen Nan Control method used in and-gate type system to increase efficiency and lengthen lifetime of use
JP3802411B2 (ja) * 2001-12-20 2006-07-26 株式会社東芝 不揮発性半導体記憶装置のデータコピー方法
JP2003196142A (ja) * 2001-12-25 2003-07-11 Sony Corp ライトワンス型メモリ装置及びファイル管理方法
US7600165B2 (en) * 2002-02-13 2009-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Error control coding method and system for non-volatile memory
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
JP2004227685A (ja) * 2003-01-23 2004-08-12 Matsushita Electric Ind Co Ltd 記録媒体の管理情報訂正装置
US7234097B1 (en) 2003-01-27 2007-06-19 Marvell International Ltd. Methods of supporting host CRC in data storage systems without RLL coding
JP2005190288A (ja) * 2003-12-26 2005-07-14 Tdk Corp メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリの制御方法
US7337371B2 (en) * 2003-12-30 2008-02-26 Intel Corporation Method and apparatus to handle parity errors in flow control channels
US7427027B2 (en) * 2004-07-28 2008-09-23 Sandisk Corporation Optimized non-volatile storage systems
JP4794269B2 (ja) * 2004-11-08 2011-10-19 パナソニック株式会社 セキュアデバイスおよび中継端末
FR2880444B1 (fr) * 2005-01-06 2007-03-09 Gemplus Sa Dispositif de stockage de donnees
JP4734033B2 (ja) * 2005-05-30 2011-07-27 株式会社東芝 記憶装置
JP4984438B2 (ja) * 2005-06-02 2012-07-25 富士通株式会社 メモリ試験装置及びメモリ試験方法
JP4688584B2 (ja) * 2005-06-21 2011-05-25 株式会社日立製作所 ストレージ装置
US7861139B2 (en) * 2007-01-26 2010-12-28 Micron Technology, Inc. Programming management data for NAND memories
KR100982580B1 (ko) * 2008-01-30 2010-09-15 (주) 라모스테크놀러지 플래시 메모리의 데이터 에러 정정장치 및 방법
US20130151755A1 (en) 2011-12-12 2013-06-13 Reuven Elhamias Non-Volatile Storage Systems with Go To Sleep Adaption
US9037931B2 (en) * 2011-12-21 2015-05-19 Advanced Micro Devices, Inc. Methods and systems for logic device defect tolerant redundancy
JP2012094246A (ja) * 2012-02-15 2012-05-17 Fujitsu Ltd メモリ試験装置及びメモリ試験方法
US9411721B2 (en) 2013-11-15 2016-08-09 Sandisk Technologies Llc Detecting access sequences for data compression on non-volatile memory devices
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
JP6164712B1 (ja) * 2016-08-18 2017-07-19 ウィンボンド エレクトロニクス コーポレーション フラッシュメモリ
KR20180073119A (ko) * 2016-12-22 2018-07-02 삼성전자주식회사 전자 장치 및 그의 에러 검출 방법

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EP0669751A2 (de) * 1994-02-23 1995-08-30 Canon Kabushiki Kaisha Datenverarbeitungsgerät mit Aufzeichnungsmedium, das Datenlöschen von Datenaufzeichnen benötigt
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
FR2730833A1 (fr) * 1995-02-16 1996-08-23 Gemplus Card Int Procede de mise a jour securisee de memoire eeprom

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EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH05233426A (ja) 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5448577A (en) 1992-10-30 1995-09-05 Intel Corporation Method for reliably storing non-data fields in a flash EEPROM memory array
US5359570A (en) 1992-11-13 1994-10-25 Silicon Storage Technology, Inc. Solid state peripheral storage device
US5439595A (en) 1993-08-25 1995-08-08 Downey, Jr.; Wayne F. Water decontamination method using peroxide photolysis ionizer
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み／消去方法
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5857069A (en) * 1996-12-30 1999-01-05 Lucent Technologies Inc. Technique for recovering defective memory
JP3565687B2 (ja) * 1997-08-06 2004-09-15 沖電気工業株式会社 半導体記憶装置およびその制御方法
JPH1153235A (ja) * 1997-08-08 1999-02-26 Toshiba Corp ディスク記憶装置のデータ更新方法、ならびにディスク記憶制御システム
JP3119214B2 (ja) * 1997-09-30 2000-12-18 ソニー株式会社 記憶装置、データ処理システム並びにデータの書き込み及び読み出し方法
US6530036B1 (en) * 1999-08-17 2003-03-04 Tricord Systems, Inc. Self-healing computer system storage
JP4034947B2 (ja) * 2001-05-31 2008-01-16 株式会社ルネサステクノロジ 不揮発性記憶システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
EP0669751A2 (de) * 1994-02-23 1995-08-30 Canon Kabushiki Kaisha Datenverarbeitungsgerät mit Aufzeichnungsmedium, das Datenlöschen von Datenaufzeichnen benötigt
FR2730833A1 (fr) * 1995-02-16 1996-08-23 Gemplus Card Int Procede de mise a jour securisee de memoire eeprom

Also Published As

Publication number Publication date
DE69821426D1 (de) 2004-03-11
US6810490B2 (en) 2004-10-26
US20020194552A1 (en) 2002-12-19
EP0907128A1 (de) 1999-04-07
DE69821426T2 (de) 2004-12-16
ID20972A (id) 1999-04-01
TW389890B (en) 2000-05-11
KR100527609B1 (ko) 2006-06-21
US7353424B2 (en) 2008-04-01
EP0907128B1 (de) 2004-02-04
KR19990030281A (ko) 1999-04-26
US6460145B1 (en) 2002-10-01
JPH11110306A (ja) 1999-04-23
JP3233079B2 (ja) 2001-11-26
US20050055610A1 (en) 2005-03-10

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