SG86379A1 - Resist pattern formation method - Google Patents

Resist pattern formation method

Info

Publication number
SG86379A1
SG86379A1 SG200001249A SG200001249A SG86379A1 SG 86379 A1 SG86379 A1 SG 86379A1 SG 200001249 A SG200001249 A SG 200001249A SG 200001249 A SG200001249 A SG 200001249A SG 86379 A1 SG86379 A1 SG 86379A1
Authority
SG
Singapore
Prior art keywords
resist pattern
formation method
pattern formation
resist
pattern
Prior art date
Application number
SG200001249A
Other languages
English (en)
Inventor
Nishimura Yukio
Kai Toshiyuki
Kobayashi Eiichi
Shioya Takeo
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of SG86379A1 publication Critical patent/SG86379A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG200001249A 1999-03-08 2000-03-06 Resist pattern formation method SG86379A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05980899A JP4019403B2 (ja) 1999-03-08 1999-03-08 レジストパターンの形成方法

Publications (1)

Publication Number Publication Date
SG86379A1 true SG86379A1 (en) 2002-02-19

Family

ID=13123925

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200001249A SG86379A1 (en) 1999-03-08 2000-03-06 Resist pattern formation method

Country Status (7)

Country Link
US (1) US6403288B1 (ja)
EP (1) EP1035436B1 (ja)
JP (1) JP4019403B2 (ja)
KR (1) KR100675237B1 (ja)
DE (1) DE60022415T2 (ja)
SG (1) SG86379A1 (ja)
TW (1) TWI263860B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3961139B2 (ja) * 1998-12-24 2007-08-22 富士フイルム株式会社 ポジ型感光性組成物
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP4199914B2 (ja) * 2000-11-29 2008-12-24 富士フイルム株式会社 ポジ型レジスト組成物
WO2002046841A1 (fr) * 2000-12-05 2002-06-13 Kansai Research Institute. Inc. Constituants actifs et compositions de resine photosensible les contenant
JP3901645B2 (ja) * 2003-02-17 2007-04-04 松下電器産業株式会社 パターン形成方法
KR100833839B1 (ko) * 2004-07-01 2008-06-02 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
EP1750176A3 (en) * 2005-08-03 2011-04-20 JSR Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
JP4715671B2 (ja) * 2005-08-03 2011-07-06 Ｊｓｒ株式会社 メッキ造形物製造用ポジ型感放射線性樹脂組成物、転写フィルムおよびメッキ造形物の製造方法
JP2008071974A (ja) * 2006-09-14 2008-03-27 Nec Electronics Corp パターン形成方法およびこれを用いた半導体装置の製造方法
CN101192000B (zh) * 2007-11-15 2010-06-02 中国航天科技集团公司第五研究院第五一○研究所 中心对称连续微结构衍射元件掩模的制作方法
JP5618576B2 (ja) * 2010-03-05 2014-11-05 富士フイルム株式会社 パターン形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0443820A2 (en) * 1990-02-20 1991-08-28 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
DE4410441A1 (de) * 1993-03-26 1994-09-29 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721055B2 (ja) * 1991-10-31 1995-03-08 チッソ株式会社 二酸化硫黄と核置換スチレン誘導体との共重合体
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3340864B2 (ja) * 1994-10-26 2002-11-05 富士写真フイルム株式会社 ポジ型化学増幅レジスト組成物
DE69714502D1 (de) * 1996-04-25 2002-09-12 Fuji Photo Film Co Ltd Positiv-arbeitende lichtempfindliche Zusammensetzung
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
JP3376222B2 (ja) * 1996-10-25 2003-02-10 クラリアント インターナショナル リミテッド 放射線感応性組成物
KR100551653B1 (ko) * 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0443820A2 (en) * 1990-02-20 1991-08-28 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
DE4410441A1 (de) * 1993-03-26 1994-09-29 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch, Week 198907 Derwent Publications Ltd., London, GB; Class A89, AN 1989-051432 XP002140880 & JP 64 002050 A (MATSUSHITA ELEC IND CO LTD), 6 January 1989 (1989-01-06) *
DATABASE WPI Section Ch, Week 199403 Derwent Publications Ltd., London, GB; Class A13, AN 1994-022990 XP002140879 & JP 05 331289 A (CHISSO CORP), 14 December 1993 (1993-12-14) *

Also Published As

Publication number Publication date
US6403288B1 (en) 2002-06-11
TWI263860B (en) 2006-10-11
EP1035436A1 (en) 2000-09-13
EP1035436B1 (en) 2005-09-07
JP2000258912A (ja) 2000-09-22
DE60022415D1 (de) 2005-10-13
KR100675237B1 (ko) 2007-01-29
JP4019403B2 (ja) 2007-12-12
KR20000076781A (ko) 2000-12-26
DE60022415T2 (de) 2006-06-29

Similar Documents

Publication Publication Date Title
EP1223470A4 (en) PATTERN GENERATION METHOD
EP1253626A4 (en) METHOD TO DRAW FINE PATTERN
ZA989813B (en) Pattern formation
AU2001231674A1 (en) Pattern
EP0903777A4 (en) CONFIGURATION FORMATION METHOD
SG75186A1 (en) Method for producing contact structures
GB0004670D0 (en) Method for forming conductive pattern
EP1452922A4 (en) METHOD FOR FORMING A FINE PATTERN
EP0989460A4 (en) PATTERN FORMING PROCESS
EP1400850A4 (en) METHOD FOR FORMING A THICK RESISTANCE STRUCTURE
SG86379A1 (en) Resist pattern formation method
GB9806478D0 (en) Pattern formation
GB2365984B (en) Resist pattern and method for forming wiring pattern
GB2334612B (en) Servo pattern
EP1061562A4 (en) PROCESS RELATING TO THE FORMATION OF A RESIST PATTERN
GB2369240B (en) Pattern lock system
EP1413927A4 (en) METHOD FOR FORMING A FINAL MOTIF
GB9919654D0 (en) Manufacturing method
GB2333850B (en) Method of forming photoresist pattern
AU2003289125A8 (en) Method for forming resist pattern and resist pattern
AU2158701A (en) Method for producing conductive patterns
GB2353387B (en) Magnetic patterns
HUP0201977A2 (en) Method for producing 4-cyano-2-aminomethylthiazol
GB2345351B (en) Pattern generating method
GB9910350D0 (en) Manufacturing method