SG71182A1 - Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method - Google Patents

Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method

Info

Publication number
SG71182A1
SG71182A1 SG1998005844A SG1998005844A SG71182A1 SG 71182 A1 SG71182 A1 SG 71182A1 SG 1998005844 A SG1998005844 A SG 1998005844A SG 1998005844 A SG1998005844 A SG 1998005844A SG 71182 A1 SG71182 A1 SG 71182A1
Authority
SG
Singapore
Prior art keywords
substrate
substrate processing
manufacturing
support apparatus
processing apparatus
Prior art date
Application number
SG1998005844A
Other languages
English (en)
Inventor
Toru Takisawa
Takao Yonehara
Kenji Yamagata
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP36101197A external-priority patent/JPH11195696A/ja
Priority claimed from JP36101097A external-priority patent/JPH11195567A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG71182A1 publication Critical patent/SG71182A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
SG1998005844A 1997-12-26 1998-12-15 Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method SG71182A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36101197A JPH11195696A (ja) 1997-12-26 1997-12-26 基板支持台及び基板処理装置
JP36101097A JPH11195567A (ja) 1997-12-26 1997-12-26 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

Publications (1)

Publication Number Publication Date
SG71182A1 true SG71182A1 (en) 2000-03-21

Family

ID=26581183

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998005844A SG71182A1 (en) 1997-12-26 1998-12-15 Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method

Country Status (7)

Country Link
US (1) US6383890B2 (zh)
EP (1) EP0926706A3 (zh)
KR (2) KR100400590B1 (zh)
CN (1) CN1153258C (zh)
AU (1) AU732765B2 (zh)
SG (1) SG71182A1 (zh)
TW (1) TW462086B (zh)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174164A (ja) 1997-08-27 1999-03-16 Canon Inc 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法
JP3991300B2 (ja) 2000-04-28 2007-10-17 株式会社Ｓｕｍｃｏ 張り合わせ誘電体分離ウェーハの製造方法
ATE341097T1 (de) * 2000-06-15 2006-10-15 Koninkl Philips Electronics Nv Halter für eine substratkassette und vorrichtung ausgerüstet mit diesem halter
JP2002025961A (ja) * 2000-07-04 2002-01-25 Disco Abrasive Syst Ltd 半導体ウエーハの研削方法
JP3742000B2 (ja) * 2000-11-30 2006-02-01 富士通株式会社 プレス装置
KR100384472B1 (ko) * 2000-12-30 2003-05-22 아이티에스테크놀러지 주식회사 대형기판의 처짐방지장치
US6491083B2 (en) * 2001-02-06 2002-12-10 Anadigics, Inc. Wafer demount receptacle for separation of thinned wafer from mounting carrier
JP2003031779A (ja) * 2001-07-13 2003-01-31 Mitsubishi Electric Corp Ｓｏｉウェハの製造方法
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
FR2851846A1 (fr) * 2003-02-28 2004-09-03 Canon Kk Systeme de liaison et procede de fabrication d'un substrat semi-conducteur
US6911375B2 (en) * 2003-06-02 2005-06-28 International Business Machines Corporation Method of fabricating silicon devices on sapphire with wafer bonding at low temperature
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
US6897125B2 (en) * 2003-09-17 2005-05-24 Intel Corporation Methods of forming backside connections on a wafer stack
US7396022B1 (en) * 2004-09-28 2008-07-08 Kla-Tencor Technologies Corp. System and method for optimizing wafer flatness at high rotational speeds
DE102004056970B4 (de) * 2004-11-25 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen einer elektrischen Kontaktierung zwischen zwei Halbleiterstücken durch ein mechanisches Element
US20070023850A1 (en) * 2005-07-30 2007-02-01 Chien-Hua Chen Bonding surfaces together via plasma treatment on both surfaces with wet treatment on only one surface
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US7948034B2 (en) * 2006-06-22 2011-05-24 Suss Microtec Lithography, Gmbh Apparatus and method for semiconductor bonding
US7775785B2 (en) * 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
US8109312B2 (en) * 2007-12-29 2012-02-07 Michelin Recherche Et Technique S.A. Tire patch applicator
JP4786693B2 (ja) * 2008-09-30 2011-10-05 三菱重工業株式会社 ウェハ接合装置およびウェハ接合方法
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
DE102009018434B4 (de) * 2009-04-22 2023-11-30 Ev Group Gmbh Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP2012160628A (ja) * 2011-02-02 2012-08-23 Sony Corp 基板の接合方法及び基板接合装置
AT511384B1 (de) * 2011-05-11 2019-10-15 Thallner Erich Verfahren und vorrichtung zum bonden zweier wafer
KR102151902B1 (ko) * 2011-08-12 2020-09-03 에베 그룹 에. 탈너 게엠베하 기판의 접합을 위한 장치 및 방법
EP2742527B1 (de) * 2011-08-12 2021-07-28 Ev Group E. Thallner GmbH Vorrichtung und verfahren zum bonden von substraten
JP5913914B2 (ja) * 2011-11-08 2016-04-27 東京応化工業株式会社 基板処理装置及び基板処理方法
DE102012111246A1 (de) * 2012-11-21 2014-05-22 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum Bonden
JP5575934B2 (ja) * 2013-01-25 2014-08-20 東京エレクトロン株式会社 接合装置及び接合システム
JP5521066B1 (ja) * 2013-01-25 2014-06-11 東京エレクトロン株式会社 接合装置及び接合システム
TWI507677B (zh) * 2013-04-18 2015-11-11 Cheng Mei Instr Technology Co Ltd 檢測及分類led晶圓的檢測總成及方法
JP5538613B1 (ja) * 2013-11-13 2014-07-02 東京エレクトロン株式会社 接合装置及び接合システム
NL2014625B1 (en) * 2015-04-13 2017-01-06 Suss Microtec Lithography Gmbh Wafer treating device and sealing ring for a wafer treating device.
KR102385071B1 (ko) * 2017-09-21 2022-04-08 에베 그룹 에. 탈너 게엠베하 기판을 접합하기 위한 장치 및 방법
US11043405B2 (en) * 2019-03-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Particle reduction in semiconductor fabrication
KR20210023298A (ko) * 2019-08-22 2021-03-04 삼성전자주식회사 기판 본딩 장치 및 이를 이용한 반도체 소자 제조 방법
CN113421841B (zh) * 2021-07-15 2023-03-24 东莞市韩际信息科技有限公司 晶圆合片机

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720555A (en) 1967-06-01 1973-03-13 Polaroid Corp Light polarizing device and process for making the same
FI53117C (zh) 1971-06-18 1978-02-10 Glaverbel
US4256787A (en) 1978-05-03 1981-03-17 Massachusetts Institute Of Technology Orientation of ordered liquids and their use in devices
US4457662A (en) 1982-03-25 1984-07-03 Pennwalt Corporation Automatic lead frame loading machine
US4551192A (en) 1983-06-30 1985-11-05 International Business Machines Corporation Electrostatic or vacuum pinchuck formed with microcircuit lithography
JPS6099538A (ja) 1983-11-01 1985-06-03 横河・ヒュ−レット・パッカ−ド株式会社 ピンチヤツク
US4506184A (en) 1984-01-10 1985-03-19 Varian Associates, Inc. Deformable chuck driven by piezoelectric means
EP0256150B1 (en) 1986-08-13 1990-04-04 Kabushiki Kaisha Toshiba Apparatus for bonding semiconductor wafers
US4724023A (en) 1985-04-09 1988-02-09 E M Partners Ag Method of making laminated glass
AT385709B (de) 1985-04-16 1988-05-10 Ver Edelstahlwerke Ag Fluessigkeitsstrahl-schneidanlage fuer flaechiges schneidgut
JPS62106643A (ja) * 1985-11-05 1987-05-18 Toshiba Corp 穴開きバキユ−ムウエハチヤツク
JPH0651251B2 (ja) 1987-11-18 1994-07-06 三菱化成株式会社 ウェハー製造方法、及びその製造装置
NL8900388A (nl) 1989-02-17 1990-09-17 Philips Nv Werkwijze voor het verbinden van twee voorwerpen.
US5273553A (en) 1989-08-28 1993-12-28 Kabushiki Kaisha Toshiba Apparatus for bonding semiconductor substrates
DE69130434T2 (de) * 1990-06-29 1999-04-29 Canon Kk Platte zum Arbeiten unter Vakuum
JP2608351B2 (ja) 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
DE4100526A1 (de) 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
JP3175232B2 (ja) * 1991-09-30 2001-06-11 ソニー株式会社 半導体ウェーハの接着方法
JP2634343B2 (ja) 1991-10-28 1997-07-23 信越化学工業株式会社 半導体ウェーハの保持方法
US5478782A (en) * 1992-05-25 1995-12-26 Sony Corporation Method bonding for production of SOI transistor device
JPH06244269A (ja) 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
JPH07110455B2 (ja) 1992-10-27 1995-11-29 住友電気工業株式会社 ウェハ固定装置
JP3321882B2 (ja) * 1993-02-28 2002-09-09 ソニー株式会社 基板はり合わせ方法
JPH06268051A (ja) 1993-03-10 1994-09-22 Mitsubishi Electric Corp ウエハ剥し装置
JPH0758191A (ja) 1993-08-13 1995-03-03 Toshiba Corp ウェハステージ装置
US5494546A (en) 1994-02-18 1996-02-27 Horvath; Steven J. Apparatus and method for applying anti-lacerative film to glass
JP3293736B2 (ja) 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JP3352340B2 (ja) 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
JPH09129557A (ja) 1995-10-27 1997-05-16 Shin Etsu Handotai Co Ltd 薄膜の製造方法
KR0165467B1 (ko) 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
EP0797258B1 (en) 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
JPH1022184A (ja) * 1996-06-28 1998-01-23 Sony Corp 基板張り合わせ装置
US5707498A (en) 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
DE19630932A1 (de) 1996-07-31 1998-02-05 Wacker Siltronic Halbleitermat Träger für eine Halbleiterscheibe und Verwendung des Trägers
SG55413A1 (en) 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
SG68035A1 (en) 1997-03-27 1999-10-19 Canon Kk Method and apparatus for separating composite member using fluid
JP2821678B2 (ja) * 1997-04-07 1998-11-05 株式会社ニコン 基板の吸着装置
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
AU7685198A (en) 1997-05-12 1998-12-08 Silicon Genesis Corporation A controlled cleavage process
JPH115064A (ja) 1997-06-16 1999-01-12 Canon Inc 試料の分離装置及びその方法並びに基板の製造方法
JPH1174164A (ja) 1997-08-27 1999-03-16 Canon Inc 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法

Also Published As

Publication number Publication date
AU9818298A (en) 1999-07-15
CN1153258C (zh) 2004-06-09
EP0926706A3 (en) 2002-02-06
EP0926706A2 (en) 1999-06-30
AU732765B2 (en) 2001-04-26
US20020001920A1 (en) 2002-01-03
TW462086B (en) 2001-11-01
KR100408606B1 (ko) 2003-12-03
KR100400590B1 (ko) 2003-11-28
CN1221968A (zh) 1999-07-07
KR20030014302A (ko) 2003-02-15
US6383890B2 (en) 2002-05-07
KR19990063511A (ko) 1999-07-26

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