SG71006A1 - Fabrication process of soi substrate - Google Patents

Fabrication process of soi substrate

Info

Publication number
SG71006A1
SG71006A1 SG1996011682A SG1996011682A SG71006A1 SG 71006 A1 SG71006 A1 SG 71006A1 SG 1996011682 A SG1996011682 A SG 1996011682A SG 1996011682 A SG1996011682 A SG 1996011682A SG 71006 A1 SG71006 A1 SG 71006A1
Authority
SG
Singapore
Prior art keywords
fabrication process
soi substrate
soi
substrate
fabrication
Prior art date
Application number
SG1996011682A
Other languages
English (en)
Inventor
Tadashi Atoji
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG71006A1 publication Critical patent/SG71006A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
SG1996011682A 1995-12-12 1996-12-12 Fabrication process of soi substrate SG71006A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32292195 1995-12-12
JP32510596A JP3250721B2 (ja) 1995-12-12 1996-12-05 Ｓｏｉ基板の製造方法

Publications (1)

Publication Number Publication Date
SG71006A1 true SG71006A1 (en) 2000-03-21

Family

ID=26570982

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996011682A SG71006A1 (en) 1995-12-12 1996-12-12 Fabrication process of soi substrate

Country Status (8)

Country Link
US (1) US6103009A (fr)
EP (1) EP0779650B1 (fr)
JP (1) JP3250721B2 (fr)
KR (1) KR100236689B1 (fr)
CN (1) CN1076862C (fr)
CA (1) CA2192631C (fr)
DE (1) DE69629094T2 (fr)
SG (1) SG71006A1 (fr)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6767840B1 (en) * 1997-02-21 2004-07-27 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
WO1999001893A2 (fr) 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Procede pour produire des structures en couche sur un substrat, substrat et composants a semi-conducteur produits a l'aide dudit procede
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
KR100491272B1 (ko) * 1997-07-16 2005-08-01 페어차일드코리아반도체 주식회사 소이 기판의 제조 방법
DE69917819T2 (de) 1998-02-04 2005-06-23 Canon K.K. SOI Substrat
US6555443B1 (en) * 1998-11-11 2003-04-29 Robert Bosch Gmbh Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
US6890827B1 (en) * 1999-01-13 2005-05-10 Agere Systems Inc. Method of fabricating a silicon on insulator transistor structure for imbedded DRAM
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP3754897B2 (ja) * 2001-02-09 2006-03-15 キヤノン株式会社 半導体装置用基板およびｓｏｉ基板の製造方法
DE10124030A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung eines Silizium-Wafers
DE10124038A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung vergrabener Bereiche
DE10124032B4 (de) * 2001-05-16 2011-02-17 Telefunken Semiconductors Gmbh & Co. Kg Verfahren zur Herstellung von Bauelementen auf einem SOI-Wafer
JP2002353182A (ja) * 2001-05-25 2002-12-06 Mitsubishi Electric Corp 半導体装置の洗浄方法および洗浄装置、ならびに半導体装置の製造方法
JP2004537142A (ja) * 2001-07-26 2004-12-09 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 走査型電子顕微鏡の性能を測定する方法
AU2002339592A1 (en) * 2001-10-29 2003-05-12 Analog Devices Inc. A method for bonding a pair of silicon wafers together and a semiconductor wafer
DE10161202C1 (de) * 2001-12-13 2003-05-08 Bosch Gmbh Robert Verfahren zur Reduktion der Dicke eines Silizium-Substrates
FR2839505B1 (fr) * 2002-05-07 2005-07-15 Univ Claude Bernard Lyon Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
JP4407384B2 (ja) * 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP4677331B2 (ja) 2005-11-30 2011-04-27 エルピーダメモリ株式会社 島状の分散構造を備えた半導体チップおよびその製造方法
US7803690B2 (en) 2006-06-23 2010-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxy silicon on insulator (ESOI)
US7875881B2 (en) * 2007-04-03 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101436115B1 (ko) * 2007-04-27 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제조방법, 및 반도체장치의 제조방법
WO2009076302A1 (fr) 2007-12-10 2009-06-18 Bayer Healthcare Llc Marqueurs de contrôle pour la détection automatique d'une solution de contrôle et procédés d'utilisation
CN100595882C (zh) * 2007-12-28 2010-03-24 上海新傲科技股份有限公司 以键合减薄制备绝缘体上硅的方法
FR2926925B1 (fr) * 2008-01-29 2010-06-25 Soitec Silicon On Insulator Procede de fabrication d'heterostructures
US7868374B2 (en) * 2008-02-21 2011-01-11 International Business Machines Corporation Semitubular metal-oxide-semiconductor field effect transistor
JP5700617B2 (ja) 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2938702B1 (fr) * 2008-11-19 2011-03-04 Soitec Silicon On Insulator Preparation de surface d'un substrat saphir pour la realisation d'heterostructures
CN101615590B (zh) * 2009-07-31 2011-07-20 上海新傲科技股份有限公司 采用选择腐蚀工艺制备绝缘体上硅材料的方法
US8440544B2 (en) 2010-10-06 2013-05-14 International Business Machines Corporation CMOS structure and method of manufacture
CN104658927B (zh) * 2013-11-19 2018-03-30 中芯国际集成电路制造(上海)有限公司 半导体晶片的键合减薄优化方法
US11232975B2 (en) 2018-09-26 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength
US10950631B1 (en) 2019-09-24 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor-on-insulator wafer having a composite insulator layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE259098T1 (de) * 1990-08-03 2004-02-15 Canon Kk Verfahren zur herstellung eines soi-substrats
CN1037727C (zh) * 1991-02-15 1998-03-11 佳能株式会社 腐蚀多孔硅用的腐蚀液以及、使用该腐蚀液的腐蚀方法
TW211621B (fr) * 1991-07-31 1993-08-21 Canon Kk
DE4127514A1 (de) * 1991-08-20 1993-02-25 Bayer Ag Verfahren zur gewinnung von polyisocyanaten aus destillationsrueckstaenden der toluylendiisocyanatherstellung
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JP3261685B2 (ja) * 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法

Also Published As

Publication number Publication date
CN1155755A (zh) 1997-07-30
EP0779650A2 (fr) 1997-06-18
DE69629094T2 (de) 2004-02-19
JPH09223782A (ja) 1997-08-26
EP0779650A3 (fr) 1997-07-02
DE69629094D1 (de) 2003-08-21
KR970054270A (ko) 1997-07-31
KR100236689B1 (ko) 2000-01-15
CN1076862C (zh) 2001-12-26
US6103009A (en) 2000-08-15
JP3250721B2 (ja) 2002-01-28
EP0779650B1 (fr) 2003-07-16
CA2192631A1 (fr) 1997-06-13
CA2192631C (fr) 2000-08-29

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