SG60162A1 - Method and device for polishing semiconductor wafers - Google Patents

Method and device for polishing semiconductor wafers

Info

Publication number
SG60162A1
SG60162A1 SG1997004221A SG1997004221A SG60162A1 SG 60162 A1 SG60162 A1 SG 60162A1 SG 1997004221 A SG1997004221 A SG 1997004221A SG 1997004221 A SG1997004221 A SG 1997004221A SG 60162 A1 SG60162 A1 SG 60162A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafers
polishing semiconductor
polishing
wafers
semiconductor
Prior art date
Application number
SG1997004221A
Other languages
English (en)
Inventor
Paul Muller
Thomas Buschhardt
Heinrich Hennhofer
Norbert Stickmann
Rainer Neumann
Franz Mangs
Manfred Thurner
Klaus Rottger
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of SG60162A1 publication Critical patent/SG60162A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Manipulator (AREA)
SG1997004221A 1996-12-12 1997-12-02 Method and device for polishing semiconductor wafers SG60162A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19651761A DE19651761A1 (de) 1996-12-12 1996-12-12 Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben

Publications (1)

Publication Number Publication Date
SG60162A1 true SG60162A1 (en) 1999-02-22

Family

ID=7814521

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997004221A SG60162A1 (en) 1996-12-12 1997-12-02 Method and device for polishing semiconductor wafers

Country Status (8)

Country Link
US (1) US5980361A (ja)
EP (1) EP0847835B1 (ja)
JP (1) JP3150933B2 (ja)
KR (1) KR100278027B1 (ja)
CN (1) CN1123423C (ja)
DE (2) DE19651761A1 (ja)
SG (1) SG60162A1 (ja)
TW (1) TW411525B (ja)

Families Citing this family (47)

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US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
EP1019955A1 (en) * 1997-08-21 2000-07-19 MEMC Electronic Materials, Inc. Method of processing semiconductor wafers
US5975998A (en) * 1997-09-26 1999-11-02 Memc Electronic Materials , Inc. Wafer processing apparatus
DE19756536A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren zum Polieren von scheibenförmigen Werkstücken und Vorrichtung zur Durchführung des Verfahrens
US6080050A (en) * 1997-12-31 2000-06-27 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
JP2000006005A (ja) * 1998-06-22 2000-01-11 Speedfam Co Ltd 両面研磨装置
US5925576A (en) * 1998-08-19 1999-07-20 Promos Technologies, Inc. Method and apparatus for controlling backside pressure during chemical mechanical polishing
CN1080619C (zh) * 1998-08-28 2002-03-13 台湾积体电路制造股份有限公司 化学机械研磨机台
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
US7140956B1 (en) 2000-03-31 2006-11-28 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
US6390905B1 (en) * 2000-03-31 2002-05-21 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
KR100802866B1 (ko) * 2000-05-01 2008-02-12 후지쯔 가부시끼가이샤 웨이퍼 연마 장치 및 웨이퍼 연마 방법
US6558232B1 (en) * 2000-05-12 2003-05-06 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
CN1179821C (zh) * 2000-05-12 2004-12-15 多平面技术公司 具有独立限位环和多区域压力控制结构的气动隔膜式抛光头及其使用方法
AU2001266742A1 (en) * 2000-06-08 2001-12-17 Speed-Fam-Ipec Corporation Orbital polishing apparatus
CN1460042A (zh) * 2000-07-31 2003-12-03 Asml美国公司 基板的化学机械抛光装置和方法
EP1182007A1 (en) * 2000-08-18 2002-02-27 Fujikoshi Machinery Corporation Carrier head with an elastic ring member
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
US6527625B1 (en) 2000-08-31 2003-03-04 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a soft backed polishing head
DE10159833C1 (de) 2001-12-06 2003-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
DE10210023A1 (de) * 2002-03-07 2003-05-28 Wacker Siltronic Halbleitermat Siliciumscheibe und Verfahren zu ihrer Herstellung
US6846222B2 (en) * 2003-03-04 2005-01-25 Hitachi Global Storage Technologies Netherlands, B.V. Multi-chambered, compliant apparatus for restraining workpiece and applying variable pressure thereto during lapping to improve flatness characteristics of workpiece
US20060180486A1 (en) * 2003-04-21 2006-08-17 Bennett David W Modular panel and storage system for flat items such as media discs and holders therefor
KR100600231B1 (ko) * 2003-07-12 2006-07-13 동부일렉트로닉스 주식회사 씨엠피 폴리싱 헤드 및 그 동작방법
US20050070205A1 (en) * 2003-09-30 2005-03-31 Speedfam-Ipec Corporation Integrated pressure control system for workpiece carrier
US6986359B2 (en) 2004-03-09 2006-01-17 Mks Instruments, Inc. System and method for controlling pressure in remote zones
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US20060138681A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Substrate and lithography process using the same
US7984002B2 (en) * 2005-04-29 2011-07-19 Charles River Analytics, Inc. Automatic source code generation for computing probabilities of variables in belief networks
US7207871B1 (en) * 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
US20070167110A1 (en) * 2006-01-16 2007-07-19 Yu-Hsiang Tseng Multi-zone carrier head for chemical mechanical polishing and cmp method thereof
JP5408789B2 (ja) * 2009-03-06 2014-02-05 エルジー・ケム・リミテッド フロートガラス研磨システム
DE102010005904B4 (de) * 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
JP5303491B2 (ja) * 2010-02-19 2013-10-02 信越半導体株式会社 研磨ヘッド及び研磨装置
CN101797714B (zh) * 2010-03-23 2012-07-11 中国电子科技集团公司第四十五研究所 抛光机晶片在线清洗装置
KR200471472Y1 (ko) * 2013-09-30 2014-03-12 전용준 상부 공압제어 어셈블리가 상부에 착·탈 가능하게 장착된 씨엠피
US10328549B2 (en) 2013-12-11 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing head, chemical-mechanical polishing system and method for polishing substrate
TWI658899B (zh) * 2014-03-31 2019-05-11 日商荏原製作所股份有限公司 研磨裝置及研磨方法
JP5608310B1 (ja) * 2014-04-08 2014-10-15 株式会社ミラノ製作所 研磨盤及び研磨機
DE102015224933A1 (de) 2015-12-11 2017-06-14 Siltronic Ag Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe
CN106312797B (zh) * 2016-09-21 2019-05-17 中国科学院上海光学精密机械研究所 调节光学元件边缘区域压强分布的抛光组件
US11320843B2 (en) * 2019-10-17 2022-05-03 Dongguan Hesheng Machinery & Electric Co., Ltd. Air compression system with pressure detection
WO2021262755A1 (en) 2020-06-24 2021-12-30 Applied Materials, Inc. Polishing carrier head with piezoelectric pressure control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2809274A1 (de) * 1978-03-03 1979-09-13 Wacker Chemitronic Verfahren zur vergleichmaessigung des polierabtrages von scheiben beim polieren
KR910009320B1 (ko) * 1986-08-19 1991-11-09 미쓰비시 마테리알 가부시기가이샤 연마장치
DE3801969A1 (de) * 1988-01-23 1989-07-27 Zeiss Carl Fa Verfahren und vorrichtung zum laeppen bzw. polieren optischer flaechen
JPH04278475A (ja) * 1990-12-26 1992-10-05 Internatl Business Mach Corp <Ibm> 先読みパターン発生及びシミュレーションの方法及びシステム
JP3370112B2 (ja) * 1992-10-12 2003-01-27 不二越機械工業株式会社 ウエハーの研磨装置
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
JP3311116B2 (ja) * 1993-10-28 2002-08-05 株式会社東芝 半導体製造装置
US5624299A (en) * 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置
JP3072962B2 (ja) * 1995-11-30 2000-08-07 ロデール・ニッタ株式会社 研磨のための被加工物の保持具及びその製法

Also Published As

Publication number Publication date
US5980361A (en) 1999-11-09
EP0847835A1 (de) 1998-06-17
JPH10180617A (ja) 1998-07-07
DE59704120D1 (de) 2001-08-30
DE19651761A1 (de) 1998-06-18
CN1185028A (zh) 1998-06-17
KR100278027B1 (ko) 2001-02-01
TW411525B (en) 2000-11-11
CN1123423C (zh) 2003-10-08
JP3150933B2 (ja) 2001-03-26
KR19980063896A (ko) 1998-10-07
EP0847835B1 (de) 2001-07-25

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