SG194748A1 - Process for forming a crack in a material - Google Patents
Process for forming a crack in a material Download PDFInfo
- Publication number
- SG194748A1 SG194748A1 SG2013081252A SG2013081252A SG194748A1 SG 194748 A1 SG194748 A1 SG 194748A1 SG 2013081252 A SG2013081252 A SG 2013081252A SG 2013081252 A SG2013081252 A SG 2013081252A SG 194748 A1 SG194748 A1 SG 194748A1
- Authority
- SG
- Singapore
- Prior art keywords
- implantation
- substrate
- process according
- lithium
- hydrogen
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Physical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1153737A FR2974944B1 (fr) | 2011-05-02 | 2011-05-02 | Procédé de formation d'une fracture dans un matériau |
| PCT/EP2012/057713 WO2012150184A1 (fr) | 2011-05-02 | 2012-04-27 | Procede de formation d'une fracture dans un materiau |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG194748A1 true SG194748A1 (en) | 2013-12-30 |
Family
ID=44262789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013081252A SG194748A1 (en) | 2011-05-02 | 2012-04-27 | Process for forming a crack in a material |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9105688B2 (https=) |
| EP (1) | EP2705529B1 (https=) |
| JP (1) | JP6019106B2 (https=) |
| KR (1) | KR101913174B1 (https=) |
| CN (1) | CN103534800B (https=) |
| FR (1) | FR2974944B1 (https=) |
| SG (1) | SG194748A1 (https=) |
| WO (1) | WO2012150184A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| TW201603193A (zh) * | 2014-06-19 | 2016-01-16 | Gtat公司 | 增強用於離子佈植的施體基板的發射性 |
| FR3043248B1 (fr) * | 2015-10-30 | 2017-12-15 | Commissariat Energie Atomique | Procede d'elimination de defauts dans un film semiconducteur comprenant la formation d'une couche de piegeage d'hydrogene |
| JP6632462B2 (ja) | 2016-04-28 | 2020-01-22 | 信越化学工業株式会社 | 複合ウェーハの製造方法 |
| FR3079658B1 (fr) * | 2018-03-28 | 2021-12-17 | Soitec Silicon On Insulator | Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques |
| FR3091000B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Procede de fabrication d’un substrat pour un capteur d’image de type face avant |
| FR3091619B1 (fr) | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de guérison avant transfert d’une couche semi-conductrice |
| FR3091620B1 (fr) * | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture |
| FR3094573B1 (fr) * | 2019-03-29 | 2021-08-13 | Soitec Silicon On Insulator | Procede de preparation d’une couche mince de materiau ferroelectrique |
| CN110341291B (zh) * | 2019-08-16 | 2021-04-06 | 江阴市合助机械科技有限公司 | 一种复合板材自动剥离方法 |
| CN113311309B (zh) * | 2021-07-30 | 2021-10-12 | 度亘激光技术（苏州）有限公司 | 半导体结构的覆盖层剥除方法及半导体结构失效分析方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE504916C2 (sv) | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
| US6544862B1 (en) * | 2000-01-14 | 2003-04-08 | Silicon Genesis Corporation | Particle distribution method and resulting structure for a layer transfer process |
| FR2847076B1 (fr) * | 2002-11-07 | 2005-02-18 | Soitec Silicon On Insulator | Procede de detachement d'une couche mince a temperature moderee apres co-implantation |
| US20050181210A1 (en) | 2004-02-13 | 2005-08-18 | Doering Patrick J. | Diamond structure separation |
| US7456080B2 (en) * | 2005-12-19 | 2008-11-25 | Corning Incorporated | Semiconductor on glass insulator made using improved ion implantation process |
| FR2899378B1 (fr) * | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
-
2011
- 2011-05-02 FR FR1153737A patent/FR2974944B1/fr not_active Expired - Fee Related
-
2012
- 2012-04-27 US US14/114,998 patent/US9105688B2/en active Active
- 2012-04-27 CN CN201280021785.XA patent/CN103534800B/zh active Active
- 2012-04-27 JP JP2014508753A patent/JP6019106B2/ja active Active
- 2012-04-27 EP EP12723839.2A patent/EP2705529B1/fr active Active
- 2012-04-27 SG SG2013081252A patent/SG194748A1/en unknown
- 2012-04-27 KR KR1020137031564A patent/KR101913174B1/ko active Active
- 2012-04-27 WO PCT/EP2012/057713 patent/WO2012150184A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2974944B1 (fr) | 2013-06-14 |
| KR101913174B1 (ko) | 2018-10-30 |
| JP2014518010A (ja) | 2014-07-24 |
| US20140113434A1 (en) | 2014-04-24 |
| WO2012150184A1 (fr) | 2012-11-08 |
| EP2705529B1 (fr) | 2015-03-11 |
| US9105688B2 (en) | 2015-08-11 |
| EP2705529A1 (fr) | 2014-03-12 |
| FR2974944A1 (fr) | 2012-11-09 |
| JP6019106B2 (ja) | 2016-11-02 |
| CN103534800B (zh) | 2016-12-07 |
| CN103534800A (zh) | 2014-01-22 |
| KR20140040725A (ko) | 2014-04-03 |
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