SG177685A1 - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling Download PDF

Info

Publication number
SG177685A1
SG177685A1 SG2012003315A SG2012003315A SG177685A1 SG 177685 A1 SG177685 A1 SG 177685A1 SG 2012003315 A SG2012003315 A SG 2012003315A SG 2012003315 A SG2012003315 A SG 2012003315A SG 177685 A1 SG177685 A1 SG 177685A1
Authority
SG
Singapore
Prior art keywords
composition according
polyalcohol
copper
condensate
oxide
Prior art date
Application number
SG2012003315A
Other languages
English (en)
Inventor
Cornelia Roeger-Goepfert
Roman Benedikt Raether
Alexandra Haag
Dieter Mayer
Charlotte Emnet
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG177685A1 publication Critical patent/SG177685A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
SG2012003315A 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling SG177685A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (1)

Publication Number Publication Date
SG177685A1 true SG177685A1 (en) 2012-02-28

Family

ID=43425023

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012003315A SG177685A1 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG10201404394QA SG10201404394QA (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filing

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201404394QA SG10201404394QA (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filing

Country Status (11)

Country Link
US (1) US9869029B2 (https=)
EP (1) EP2459778B1 (https=)
JP (1) JP5714581B2 (https=)
KR (1) KR101752018B1 (https=)
CN (1) CN102597329B (https=)
IL (1) IL217536A (https=)
MY (1) MY157126A (https=)
RU (1) RU2539897C2 (https=)
SG (2) SG177685A1 (https=)
TW (1) TWI487813B (https=)
WO (1) WO2011012462A2 (https=)

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US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
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BR112013021062A2 (pt) * 2011-02-22 2019-09-24 Basf Se polímero, processo para a preparação de um polímero, e, uso de um polímero
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
JP6463330B2 (ja) * 2013-03-13 2019-01-30 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 土壌の保水性を有効に高める湿潤剤組成物およびその特定のための関連方法
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JP6474410B2 (ja) * 2013-12-09 2019-02-27 アヴニ 電気化学的に不活性なカチオンを含む銅電着浴
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
KR102566586B1 (ko) * 2016-07-18 2023-08-16 바스프 에스이 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
CN111344438B (zh) * 2017-11-20 2025-06-06 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
CN111918985B (zh) * 2018-03-29 2024-02-02 巴斯夫欧洲公司 用于锡-银合金电镀的包含配位剂的组合物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same

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US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115756A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102365396B (zh) 2009-04-07 2014-12-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

Also Published As

Publication number Publication date
US9869029B2 (en) 2018-01-16
JP5714581B2 (ja) 2015-05-07
TWI487813B (zh) 2015-06-11
KR101752018B1 (ko) 2017-06-28
MY157126A (en) 2016-05-13
WO2011012462A3 (en) 2012-01-19
CN102597329A (zh) 2012-07-18
TW201109477A (en) 2011-03-16
IL217536A0 (en) 2012-02-29
US20120128888A1 (en) 2012-05-24
RU2012107133A (ru) 2013-09-10
RU2539897C2 (ru) 2015-01-27
WO2011012462A2 (en) 2011-02-03
CN102597329B (zh) 2015-12-16
EP2459778B1 (en) 2015-01-14
SG10201404394QA (en) 2014-10-30
EP2459778A2 (en) 2012-06-06
JP2013500394A (ja) 2013-01-07
IL217536A (en) 2016-05-31
KR20120051721A (ko) 2012-05-22

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