SG171714A1 - Strain engineered composite semiconductor substrates and methods of forming same - Google Patents
Strain engineered composite semiconductor substrates and methods of forming same Download PDFInfo
- Publication number
- SG171714A1 SG171714A1 SG2011029006A SG2011029006A SG171714A1 SG 171714 A1 SG171714 A1 SG 171714A1 SG 2011029006 A SG2011029006 A SG 2011029006A SG 2011029006 A SG2011029006 A SG 2011029006A SG 171714 A1 SG171714 A1 SG 171714A1
- Authority
- SG
- Singapore
- Prior art keywords
- strained
- substrate
- nitride material
- strain
- seed layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 210
- 239000002131 composite material Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 239000000463 material Substances 0.000 claims abstract description 201
- 239000002019 doping agent Substances 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 description 34
- 239000010980 sapphire Substances 0.000 description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000001939 inductive effect Effects 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 238000005498 polishing Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000000678 plasma activation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- -1 for example Substances 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 101710177204 Atrochrysone carboxyl ACP thioesterase Proteins 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910005103 Si3Ny Inorganic materials 0.000 description 1
- 239000011717 all-trans-retinol Substances 0.000 description 1
- 235000019169 all-trans-retinol Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IB2008/003597 WO2010070377A1 (en) | 2008-12-19 | 2008-12-19 | Strain engineered composite semiconductor substrates and methods of forming same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG171714A1 true SG171714A1 (en) | 2011-07-28 |
Family
ID=40949292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011029006A SG171714A1 (en) | 2008-12-19 | 2008-12-19 | Strain engineered composite semiconductor substrates and methods of forming same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2377153A1 (ja) |
| JP (1) | JP2012513113A (ja) |
| KR (1) | KR101226073B1 (ja) |
| CN (1) | CN102246291B (ja) |
| SG (1) | SG171714A1 (ja) |
| WO (1) | WO2010070377A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101659738B1 (ko) * | 2010-07-08 | 2016-09-26 | 엘지이노텍 주식회사 | 발광 소자 제조방법 |
| FR2978605B1 (fr) * | 2011-07-28 | 2015-10-16 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support |
| KR102002898B1 (ko) | 2012-09-04 | 2019-07-23 | 삼성전자 주식회사 | 반도체 버퍼 구조체 및 이를 포함하는 반도체 소자 |
| JP7201141B2 (ja) * | 2016-01-20 | 2023-01-10 | マサチューセッツ インスティテュート オブ テクノロジー | キャリア基板上のデバイスの製造 |
| JP7028547B2 (ja) * | 2016-06-20 | 2022-03-02 | 株式会社アドバンテスト | 化合物半導体装置の製造方法 |
| CN106449368B (zh) * | 2016-11-24 | 2020-05-12 | 清华大学 | 半导体结构以及制备方法 |
| TWI701715B (zh) * | 2017-06-06 | 2020-08-11 | 黃知澍 | N-face III族/氮化物磊晶結構及其主動元件與其積體化之極性反轉製作方法 |
| CN112585305B (zh) * | 2018-08-09 | 2023-03-28 | 信越化学工业株式会社 | GaN层叠基板的制造方法 |
| JP7253994B2 (ja) * | 2019-07-23 | 2023-04-07 | 株式会社ディスコ | 光デバイスの移設方法 |
| CN112735944A (zh) * | 2021-01-05 | 2021-04-30 | 西安电子科技大学 | 氮极性面GaN材料及其制作方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2871172B1 (fr) * | 2004-06-03 | 2006-09-22 | Soitec Silicon On Insulator | Support d'epitaxie hybride et son procede de fabrication |
| US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
| US7638410B2 (en) * | 2005-10-03 | 2009-12-29 | Los Alamos National Security, Llc | Method of transferring strained semiconductor structure |
| JP5604102B2 (ja) * | 2006-06-21 | 2014-10-08 | 独立行政法人科学技術振興機構 | 安熱法による成長で作製された、窒素面またはＭ面ＧａＮ基板を用いた光電子デバイスと電子デバイス |
-
2008
- 2008-12-19 EP EP08875786A patent/EP2377153A1/en not_active Withdrawn
- 2008-12-19 JP JP2011541617A patent/JP2012513113A/ja not_active Withdrawn
- 2008-12-19 WO PCT/IB2008/003597 patent/WO2010070377A1/en active Application Filing
- 2008-12-19 CN CN200880132349.3A patent/CN102246291B/zh active Active
- 2008-12-19 KR KR1020117012475A patent/KR101226073B1/ko active IP Right Grant
- 2008-12-19 SG SG2011029006A patent/SG171714A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR101226073B1 (ko) | 2013-01-25 |
| EP2377153A1 (en) | 2011-10-19 |
| CN102246291A (zh) | 2011-11-16 |
| JP2012513113A (ja) | 2012-06-07 |
| CN102246291B (zh) | 2015-12-16 |
| WO2010070377A1 (en) | 2010-06-24 |
| KR20110081331A (ko) | 2011-07-13 |
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