SG169267A1 - Method for producing a polished semiconductor wafer - Google Patents
Method for producing a polished semiconductor waferInfo
- Publication number
- SG169267A1 SG169267A1 SG201004606-8A SG2010046068A SG169267A1 SG 169267 A1 SG169267 A1 SG 169267A1 SG 2010046068 A SG2010046068 A SG 2010046068A SG 169267 A1 SG169267 A1 SG 169267A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafer
- producing
- polished
- polished semiconductor
- polishing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009037281A DE102009037281B4 (de) | 2009-08-12 | 2009-08-12 | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
Publications (1)
Publication Number | Publication Date |
---|---|
SG169267A1 true SG169267A1 (en) | 2011-03-30 |
Family
ID=43448282
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013003611A SG187487A1 (en) | 2009-08-12 | 2010-06-28 | Method for producing a polished semiconductor wafer |
SG201004606-8A SG169267A1 (en) | 2009-08-12 | 2010-06-28 | Method for producing a polished semiconductor wafer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013003611A SG187487A1 (en) | 2009-08-12 | 2010-06-28 | Method for producing a polished semiconductor wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US8409992B2 (ko) |
JP (1) | JP5323016B2 (ko) |
KR (1) | KR101432863B1 (ko) |
CN (1) | CN101996863B (ko) |
DE (1) | DE102009037281B4 (ko) |
SG (2) | SG187487A1 (ko) |
TW (1) | TWI420581B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8952496B2 (en) * | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
KR20150010964A (ko) | 2012-05-02 | 2015-01-29 | 엠이엠씨 싱가포르 피티이. 엘티디. | 잉곳 연삭을 위한 시스템 및 방법 |
DE102013204830B4 (de) * | 2013-03-19 | 2014-10-09 | Siltronic Ag | Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium |
DE102015224933A1 (de) * | 2015-12-11 | 2017-06-14 | Siltronic Ag | Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe |
US10600634B2 (en) * | 2015-12-21 | 2020-03-24 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods with dynamic control |
CN108807138A (zh) * | 2017-04-28 | 2018-11-13 | 胜高股份有限公司 | 硅晶圆及其制造方法 |
DE102017210423A1 (de) * | 2017-06-21 | 2018-12-27 | Siltronic Ag | Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe |
JP6451825B1 (ja) * | 2017-12-25 | 2019-01-16 | 株式会社Sumco | ウェーハの両面研磨方法 |
KR102483923B1 (ko) * | 2017-12-27 | 2023-01-02 | 삼성전자 주식회사 | 베벨부를 갖는 반도체 웨이퍼 |
DE102018200415A1 (de) * | 2018-01-11 | 2019-07-11 | Siltronic Ag | Halbleiterscheibe mit epitaktischer Schicht |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0624200B2 (ja) * | 1989-04-28 | 1994-03-30 | 信越半導体株式会社 | 半導体デバイス用基板の加工方法 |
JP3007678B2 (ja) | 1990-11-30 | 2000-02-07 | 株式会社岡本工作機械製作所 | ポリッシング装置とそのポリッシング方法 |
JP2719855B2 (ja) * | 1991-05-24 | 1998-02-25 | 信越半導体株式会社 | ウエーハ外周の鏡面面取り装置 |
JPH0639707A (ja) | 1992-07-27 | 1994-02-15 | Ratsupu Master S F T Kk | ポリッシング装置とその加工方法 |
DE4316096C1 (de) | 1993-05-13 | 1994-11-10 | Wacker Chemitronic | Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke |
JP3067479B2 (ja) * | 1993-07-30 | 2000-07-17 | 信越半導体株式会社 | ウエーハの高平坦度エッチング方法および装置 |
US5595522A (en) * | 1994-01-04 | 1997-01-21 | Texas Instruments Incorporated | Semiconductor wafer edge polishing system and method |
US5497085A (en) * | 1994-12-19 | 1996-03-05 | Conner Peripherals, Inc. | Method for determining an outer diameter rolloff in a process for making magnetic disks |
US5968849A (en) | 1995-06-26 | 1999-10-19 | Motorola, Inc. | Method for pre-shaping a semiconductor substrate for polishing and structure |
US5928066A (en) * | 1995-12-05 | 1999-07-27 | Shin-Etsu Handotai Co., Ltd. | Apparatus for polishing peripheral portion of wafer |
US5713784A (en) * | 1996-05-17 | 1998-02-03 | Mark A. Miller | Apparatus for grinding edges of a glass sheet |
US6048254A (en) * | 1997-03-06 | 2000-04-11 | Keltech Engineering | Lapping apparatus and process with annular abrasive area |
US5967882A (en) * | 1997-03-06 | 1999-10-19 | Keltech Engineering | Lapping apparatus and process with two opposed lapping platens |
JPH11154655A (ja) * | 1997-11-21 | 1999-06-08 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
US5993293A (en) * | 1998-06-17 | 1999-11-30 | Speedram Corporation | Method and apparatus for improved semiconductor wafer polishing |
CN1138612C (zh) * | 1998-06-25 | 2004-02-18 | 尤诺瓦英国有限公司 | 抛光晶片边缘的方法和设备 |
US6595028B1 (en) * | 1999-09-30 | 2003-07-22 | Hoya Corporation | Chemical reinforced glass substrate having desirable edge profile and method of manufacturing the same |
JP2001191246A (ja) * | 2000-01-06 | 2001-07-17 | Nec Corp | 平面研磨装置および平面研磨方法 |
DE10002354A1 (de) * | 2000-01-20 | 2001-08-09 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
JP3874233B2 (ja) | 2000-02-29 | 2007-01-31 | 株式会社Sumco | 片面鏡面ウェーハ |
US6842257B2 (en) * | 2001-03-09 | 2005-01-11 | Seagate Technology Llc | Method for inspection of magnetic disc edge roll-off |
DE10132504C1 (de) * | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
US20030064902A1 (en) * | 2001-10-03 | 2003-04-03 | Memc Electronic Materials Inc. | Apparatus and process for producing polished semiconductor wafers |
KR100518582B1 (ko) * | 2002-08-29 | 2005-10-04 | 삼성전자주식회사 | 비대칭적 에지 프로파일을 가진 반도체 웨이퍼 및 그제조방법 |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
SG125108A1 (en) * | 2003-03-11 | 2006-09-29 | Asml Netherlands Bv | Assembly comprising a sensor for determining at least one of tilt and height of a substrate, a method therefor and a lithographic projection apparatus |
JP4791694B2 (ja) | 2004-01-22 | 2011-10-12 | Sumco Techxiv株式会社 | 半導体エピタキシャルウェーハの製造方法 |
DE102004005702A1 (de) | 2004-02-05 | 2005-09-01 | Siltronic Ag | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
KR20070051337A (ko) * | 2004-08-20 | 2007-05-17 | 세미툴 인코포레이티드 | 반도체 제품 박막용 시스템 |
US7354649B2 (en) * | 2004-08-20 | 2008-04-08 | Semitool, Inc. | Semiconductor workpiece |
JP2006092722A (ja) * | 2004-08-27 | 2006-04-06 | Showa Denko Kk | 磁気ディスク用基板および磁気ディスクの製造方法 |
US7029375B2 (en) * | 2004-08-31 | 2006-04-18 | Tech Semiconductor Pte. Ltd. | Retaining ring structure for edge control during chemical-mechanical polishing |
JP4748968B2 (ja) * | 2004-10-27 | 2011-08-17 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
DE102004053308A1 (de) * | 2004-11-04 | 2006-03-23 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen beider Seiten eines scheibenförmigen Werkstücks sowie damit herstellbare Halbleiterscheibe |
DE102004054566B4 (de) * | 2004-11-11 | 2008-04-30 | Siltronic Ag | Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit |
JP2006237055A (ja) * | 2005-02-22 | 2006-09-07 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法および半導体ウェーハの鏡面面取り方法 |
DE102005045338B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102006022089A1 (de) * | 2006-05-11 | 2007-11-15 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe mit einr profilierten Kante |
JP2008028259A (ja) | 2006-07-24 | 2008-02-07 | Mitsubishi Chemicals Corp | 単結晶GaN基板の製造方法 |
DE102006044367B4 (de) * | 2006-09-20 | 2011-07-14 | Siltronic AG, 81737 | Verfahren zum Polieren einer Halbleiterscheibe und eine nach dem Verfahren herstellbare polierte Halbleiterscheibe |
JP2009119537A (ja) * | 2007-11-12 | 2009-06-04 | Toshiba Corp | 基板処理方法及び基板処理装置 |
US20090142916A1 (en) * | 2007-11-29 | 2009-06-04 | Qimonda Ag | Apparatus and method of manufacturing an integrated circuit |
CN101456163B (zh) * | 2007-12-14 | 2012-12-26 | 深圳市裕鼎精密工业科技有限公司 | 流体喷射抛光机 |
JP5207447B2 (ja) * | 2008-01-31 | 2013-06-12 | Sumco Techxiv株式会社 | 半導体ウェーハの評価方法及び製造方法。 |
DE102009025243B4 (de) * | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
-
2009
- 2009-08-12 DE DE102009037281A patent/DE102009037281B4/de active Active
-
2010
- 2010-06-28 SG SG2013003611A patent/SG187487A1/en unknown
- 2010-06-28 SG SG201004606-8A patent/SG169267A1/en unknown
- 2010-07-08 CN CN2010102262072A patent/CN101996863B/zh active Active
- 2010-07-16 TW TW099123455A patent/TWI420581B/zh active
- 2010-07-23 KR KR1020100071355A patent/KR101432863B1/ko active IP Right Grant
- 2010-08-04 US US12/850,019 patent/US8409992B2/en active Active
- 2010-08-12 JP JP2010180720A patent/JP5323016B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
SG187487A1 (en) | 2013-02-28 |
CN101996863A (zh) | 2011-03-30 |
KR20110016822A (ko) | 2011-02-18 |
US8409992B2 (en) | 2013-04-02 |
JP2011040753A (ja) | 2011-02-24 |
TWI420581B (zh) | 2013-12-21 |
DE102009037281A1 (de) | 2011-02-17 |
KR101432863B1 (ko) | 2014-08-26 |
CN101996863B (zh) | 2013-04-10 |
DE102009037281B4 (de) | 2013-05-08 |
TW201106422A (en) | 2011-02-16 |
US20110039411A1 (en) | 2011-02-17 |
JP5323016B2 (ja) | 2013-10-23 |
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