SG166722A1 - Methods for producing epitaxially coated silicon wafers - Google Patents

Methods for producing epitaxially coated silicon wafers

Info

Publication number
SG166722A1
SG166722A1 SG201001943-8A SG2010019438A SG166722A1 SG 166722 A1 SG166722 A1 SG 166722A1 SG 2010019438 A SG2010019438 A SG 2010019438A SG 166722 A1 SG166722 A1 SG 166722A1
Authority
SG
Singapore
Prior art keywords
during
flow rate
slm
silicon wafer
epitaxially coated
Prior art date
Application number
SG201001943-8A
Other languages
English (en)
Inventor
Dr Joerg Haberecht
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG166722A1 publication Critical patent/SG166722A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG201001943-8A 2009-05-20 2010-03-22 Methods for producing epitaxially coated silicon wafers SG166722A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009022224A DE102009022224B4 (de) 2009-05-20 2009-05-20 Verfahren zur Herstellung von epitaxierten Siliciumscheiben

Publications (1)

Publication Number Publication Date
SG166722A1 true SG166722A1 (en) 2010-12-29

Family

ID=42993609

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201001943-8A SG166722A1 (en) 2009-05-20 2010-03-22 Methods for producing epitaxially coated silicon wafers

Country Status (7)

Country Link
US (1) US8709156B2 (zh)
JP (1) JP4948628B2 (zh)
KR (1) KR101077324B1 (zh)
CN (1) CN101894743B (zh)
DE (1) DE102009022224B4 (zh)
SG (1) SG166722A1 (zh)
TW (1) TWI404125B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343379B2 (en) * 2011-10-14 2016-05-17 Sunedison Semiconductor Limited Method to delineate crystal related defects
KR101339580B1 (ko) * 2012-01-27 2013-12-10 주식회사 엘지실트론 소이 웨이퍼의 에피층 제조방법
CN107658245A (zh) 2013-01-16 2018-02-02 应用材料公司 石英上拱形结构及下拱形结构
KR102034901B1 (ko) * 2013-07-22 2019-11-08 에스케이실트론 주식회사 공정 챔버의 세정 방법
KR101589599B1 (ko) * 2014-12-22 2016-01-28 주식회사 엘지실트론 웨이퍼의 제조 방법
DE102015225663A1 (de) * 2015-12-17 2017-06-22 Siltronic Ag Verfahren zum epitaktischen Beschichten von Halbleiterscheiben und Halbleiterscheibe
CN107331610A (zh) * 2016-04-28 2017-11-07 上海新昇半导体科技有限公司 提高硅晶片外延层表面平整度的方法
DE102017210450A1 (de) * 2017-06-21 2018-12-27 Siltronic Ag Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe
JP6717267B2 (ja) * 2017-07-10 2020-07-01 株式会社Sumco シリコンウェーハの製造方法
CN110189991A (zh) * 2019-04-30 2019-08-30 上海新昇半导体科技有限公司 一种外延片的制造方法
CN112201568A (zh) * 2020-10-28 2021-01-08 西安奕斯伟硅片技术有限公司 一种用于硅片的外延生长的方法和设备
CN115198352B (zh) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 一种外延生长方法及外延晶圆
CN115537918A (zh) * 2022-10-10 2022-12-30 中环领先半导体材料有限公司 一种改善111衬底外延表面粗糙度的工艺方法
CN115928203A (zh) * 2022-12-27 2023-04-07 西安奕斯伟材料科技有限公司 外延晶圆生产设备、外延晶圆生产方法和装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874464A (en) * 1988-03-14 1989-10-17 Epsilon Limited Partnership Process for epitaxial deposition of silicon
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
DE19938340C1 (de) 1999-08-13 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
DE10025871A1 (de) * 2000-05-25 2001-12-06 Wacker Siltronic Halbleitermat Epitaxierte Halbleiterscheibe und Verfahren zu ihrer Herstellung
JP4158607B2 (ja) 2003-06-09 2008-10-01 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP4508000B2 (ja) 2005-06-22 2010-07-21 株式会社Ｓｕｍｃｏ エピタキシャル膜の製造方法
US7195934B2 (en) 2005-07-11 2007-03-27 Applied Materials, Inc. Method and system for deposition tuning in an epitaxial film growth apparatus
DE102005045339B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102005045338B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102005045337B4 (de) * 2005-09-22 2008-08-21 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
US7651948B2 (en) 2006-06-30 2010-01-26 Applied Materials, Inc. Pre-cleaning of substrates in epitaxy chambers
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
DE102009004557B4 (de) * 2009-01-14 2018-03-08 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102009010556B4 (de) * 2009-02-25 2013-11-07 Siltronic Ag Verfahren zur Herstellung von epitaxierten Siliciumscheiben
DE102009011622B4 (de) * 2009-03-04 2018-10-25 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe

Also Published As

Publication number Publication date
KR20100125175A (ko) 2010-11-30
US20100294197A1 (en) 2010-11-25
KR101077324B1 (ko) 2011-10-26
TWI404125B (zh) 2013-08-01
CN101894743B (zh) 2012-09-26
CN101894743A (zh) 2010-11-24
DE102009022224B4 (de) 2012-09-13
DE102009022224A1 (de) 2010-11-25
US8709156B2 (en) 2014-04-29
TW201110197A (en) 2011-03-16
JP2010272868A (ja) 2010-12-02
JP4948628B2 (ja) 2012-06-06

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