SG163597A1 - Method of depositing materials on a non-planar surface - Google Patents

Method of depositing materials on a non-planar surface

Info

Publication number
SG163597A1
SG163597A1 SG201004989-8A SG2010049898A SG163597A1 SG 163597 A1 SG163597 A1 SG 163597A1 SG 2010049898 A SG2010049898 A SG 2010049898A SG 163597 A1 SG163597 A1 SG 163597A1
Authority
SG
Singapore
Prior art keywords
planar
planar substrates
processing chamber
planar surface
substrates
Prior art date
Application number
SG201004989-8A
Other languages
English (en)
Inventor
Ratson Morad
Original Assignee
Solyndra Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solyndra Inc filed Critical Solyndra Inc
Publication of SG163597A1 publication Critical patent/SG163597A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/13—Single electrolytic cells with circulation of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)
SG201004989-8A 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface SG163597A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92229007P 2007-04-05 2007-04-05
US11/801,469 US7563725B2 (en) 2007-04-05 2007-05-09 Method of depositing materials on a non-planar surface

Publications (1)

Publication Number Publication Date
SG163597A1 true SG163597A1 (en) 2010-08-30

Family

ID=39827323

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201004989-8A SG163597A1 (en) 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface

Country Status (8)

Country Link
US (2) US7563725B2 (zh)
EP (1) EP2137761A4 (zh)
JP (1) JP5415401B2 (zh)
KR (1) KR20100016224A (zh)
CN (1) CN101681844B (zh)
MY (1) MY149238A (zh)
SG (1) SG163597A1 (zh)
WO (1) WO2008123930A1 (zh)

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WO2011028290A1 (en) * 2009-09-06 2011-03-10 Hanzhong Zhang Tubular photovoltaic device and method of making
US8087380B2 (en) * 2009-10-30 2012-01-03 Intevac, Inc. Evaporative system for solar cell fabrication
TW201200628A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus
US9178093B2 (en) 2011-07-06 2015-11-03 Flextronics Ap, Llc Solar cell module on molded lead-frame and method of manufacture
CN103866249A (zh) * 2012-12-13 2014-06-18 中国科学院大连化学物理研究所 一种磁控溅射装置及其应用
CN104213094A (zh) * 2013-06-04 2014-12-17 金弼 一种真空镀膜装置
US9300169B1 (en) 2013-06-26 2016-03-29 Cameron M. D. Bardy Automotive roof rack with integral solar cell array
JP6805124B2 (ja) * 2014-07-09 2020-12-23 ソレラス・アドヴァンスト・コーティングス・ビーヴイ 移動ターゲットを有するスパッタ装置
JP6451030B2 (ja) * 2015-01-26 2019-01-16 株式会社昭和真空 成膜装置
US9963778B2 (en) 2015-05-07 2018-05-08 International Business Machines Corporation Functionally graded material by in-situ gradient alloy sputter deposition management
KR102651054B1 (ko) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
CN108385068B (zh) * 2018-02-05 2019-12-31 信利光电股份有限公司 一种曲面盖板的镀膜装置、镀膜方法和可读存储介质
CN110007539B (zh) * 2019-05-22 2021-09-21 江苏铁锚玻璃股份有限公司 高效均匀变色的曲面电致变色透明器件及其制备方法
BE1027427B1 (nl) * 2019-07-14 2021-02-08 Soleras Advanced Coatings Bv Bewegingssystemen voor sputter coaten van niet-vlakke substraten

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Also Published As

Publication number Publication date
EP2137761A1 (en) 2009-12-30
JP2010523818A (ja) 2010-07-15
EP2137761A4 (en) 2011-12-07
CN101681844B (zh) 2013-03-27
US20090255471A1 (en) 2009-10-15
CN101681844A (zh) 2010-03-24
MY149238A (en) 2013-07-31
US20080248647A1 (en) 2008-10-09
WO2008123930A1 (en) 2008-10-16
KR20100016224A (ko) 2010-02-12
US7563725B2 (en) 2009-07-21
US8580037B2 (en) 2013-11-12
JP5415401B2 (ja) 2014-02-12

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