MY149238A - Method of depositing materials on a non-planar surface - Google Patents

Method of depositing materials on a non-planar surface

Info

Publication number
MY149238A
MY149238A MYPI20094133A MYPI20094133A MY149238A MY 149238 A MY149238 A MY 149238A MY PI20094133 A MYPI20094133 A MY PI20094133A MY PI20094133 A MYPI20094133 A MY PI20094133A MY 149238 A MY149238 A MY 149238A
Authority
MY
Malaysia
Prior art keywords
planar
planar substrates
depositing materials
substrates
planar surface
Prior art date
Application number
MYPI20094133A
Inventor
Ratson Morad
Original Assignee
Solyndra Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solyndra Inc filed Critical Solyndra Inc
Publication of MY149238A publication Critical patent/MY149238A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/13—Single electrolytic cells with circulation of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A METHOD OF DEPOSITING MATERIALS ON A NON-PLANAR SURFACE IS DISCLOSED. THE METHOD IS EFFECTUATED BY ROTATING NON-PLANAR SUBSTRATES (205) AS THEY TRAVEL DOWN A TRANSLATIONAL PATH OF A PROCESSING CHAMBER (300). AS THE NON-PLANAR SUBSTRATES SIMULTANEOUSLY ROTATE AND TRANSLATE DOWN A PROCESSING CHANGER, THE ROTATION EXPOSES THE WHOLE OR ANY DESIRED PORTION OF THE SURFACE AREA OF THE NON-PLANAR SUBSTRATES TO THE DEPOSITION PROCESS, ALLOWING FOR UNIFORM DEPOSITION AS DESIRED. ALTERNATIVELY, ANY PREDETERMINED PATTERN IS ABLE TO BE EXPOSED ON THE SURFACE OF THE NON-PLANAR SUBSTRATES. SUCH A METHOD EFFECTUATES MANUFACTURE OF NON-PLANAR SEMICONDUCTOR DEVICES, INCLUDING, BUT NOT LIMITED TO, NON PLANAR LIGHT EMITTING DIODES, NON-PLANAR PHOTOVOLTAIC CELLS, AND THE LIKE
MYPI20094133A 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface MY149238A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92229007P 2007-04-05 2007-04-05
US11/801,469 US7563725B2 (en) 2007-04-05 2007-05-09 Method of depositing materials on a non-planar surface

Publications (1)

Publication Number Publication Date
MY149238A true MY149238A (en) 2013-07-31

Family

ID=39827323

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20094133A MY149238A (en) 2007-04-05 2008-03-24 Method of depositing materials on a non-planar surface

Country Status (8)

Country Link
US (2) US7563725B2 (en)
EP (1) EP2137761A4 (en)
JP (1) JP5415401B2 (en)
KR (1) KR20100016224A (en)
CN (1) CN101681844B (en)
MY (1) MY149238A (en)
SG (1) SG163597A1 (en)
WO (1) WO2008123930A1 (en)

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CN102598286A (en) * 2009-09-06 2012-07-18 张晗钟 Tubular photovoltaic device and method of making
US8087380B2 (en) * 2009-10-30 2012-01-03 Intevac, Inc. Evaporative system for solar cell fabrication
TW201200628A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus
US9178093B2 (en) 2011-07-06 2015-11-03 Flextronics Ap, Llc Solar cell module on molded lead-frame and method of manufacture
CN103866249A (en) * 2012-12-13 2014-06-18 中国科学院大连化学物理研究所 Magnetron sputtering device and its application
CN104213094A (en) * 2013-06-04 2014-12-17 金弼 Vacuum coating device
US9300169B1 (en) 2013-06-26 2016-03-29 Cameron M. D. Bardy Automotive roof rack with integral solar cell array
BE1022358B1 (en) 2014-07-09 2016-03-24 Soleras Advanced Coatings Bvba Sputtering device with moving target
JP6451030B2 (en) * 2015-01-26 2019-01-16 株式会社昭和真空 Deposition equipment
US9963778B2 (en) 2015-05-07 2018-05-08 International Business Machines Corporation Functionally graded material by in-situ gradient alloy sputter deposition management
KR102651054B1 (en) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 Transfering device, Method using the same and Display apparatus
CN108385068B (en) * 2018-02-05 2019-12-31 信利光电股份有限公司 Coating device and method for curved surface cover plate and readable storage medium
CN110007539B (en) * 2019-05-22 2021-09-21 江苏铁锚玻璃股份有限公司 Efficient and uniform color-changing curved surface electrochromic transparent device and preparation method thereof
BE1027427B1 (en) * 2019-07-14 2021-02-08 Soleras Advanced Coatings Bv Motion systems for sputter coating non-planar substrates

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Also Published As

Publication number Publication date
US8580037B2 (en) 2013-11-12
SG163597A1 (en) 2010-08-30
CN101681844B (en) 2013-03-27
WO2008123930A1 (en) 2008-10-16
US20090255471A1 (en) 2009-10-15
JP5415401B2 (en) 2014-02-12
JP2010523818A (en) 2010-07-15
CN101681844A (en) 2010-03-24
EP2137761A1 (en) 2009-12-30
US20080248647A1 (en) 2008-10-09
EP2137761A4 (en) 2011-12-07
KR20100016224A (en) 2010-02-12
US7563725B2 (en) 2009-07-21

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