SG162778A1 - Confined plasma with adjustable electrode area ratio - Google Patents

Confined plasma with adjustable electrode area ratio

Info

Publication number
SG162778A1
SG162778A1 SG201004113-5A SG2010041135A SG162778A1 SG 162778 A1 SG162778 A1 SG 162778A1 SG 2010041135 A SG2010041135 A SG 2010041135A SG 162778 A1 SG162778 A1 SG 162778A1
Authority
SG
Singapore
Prior art keywords
confinement rings
electrode
area ratio
electrode area
bottom electrode
Prior art date
Application number
SG201004113-5A
Other languages
English (en)
Inventor
Andreas Fischer
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG162778A1 publication Critical patent/SG162778A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
SG201004113-5A 2005-06-13 2006-06-12 Confined plasma with adjustable electrode area ratio SG162778A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/152,022 US7837825B2 (en) 2005-06-13 2005-06-13 Confined plasma with adjustable electrode area ratio

Publications (1)

Publication Number Publication Date
SG162778A1 true SG162778A1 (en) 2010-07-29

Family

ID=36968842

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201004113-5A SG162778A1 (en) 2005-06-13 2006-06-12 Confined plasma with adjustable electrode area ratio

Country Status (8)

Country Link
US (1) US7837825B2 (ja)
JP (1) JP4751446B2 (ja)
KR (1) KR101257131B1 (ja)
CN (1) CN101199036B (ja)
MY (1) MY147834A (ja)
SG (1) SG162778A1 (ja)
TW (1) TWI386996B (ja)
WO (1) WO2006135909A1 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US7824519B2 (en) * 2007-05-18 2010-11-02 Lam Research Corporation Variable volume plasma processing chamber and associated methods
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9337004B2 (en) * 2009-04-06 2016-05-10 Lam Research Corporation Grounded confinement ring having large surface area
ATE551439T1 (de) * 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
JP5782226B2 (ja) * 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
JP5781808B2 (ja) * 2010-03-31 2015-09-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR20110113066A (ko) 2010-04-08 2011-10-14 삼성전자주식회사 반도체 제조 장치의 플라즈마 처리 방법
US9478428B2 (en) 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
JP5808012B2 (ja) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
JP5937921B2 (ja) 2012-08-09 2016-06-22 株式会社ブリヂストン 路面状態判別方法とその装置
WO2014036147A1 (en) * 2012-08-28 2014-03-06 Jh Quantum Technology, Inc. System and method for plasma generation
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
JP2016051876A (ja) * 2014-09-02 2016-04-11 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
CN108470670B (zh) * 2018-02-26 2020-07-24 德淮半导体有限公司 刻蚀电极和边缘刻蚀装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4392932A (en) 1981-11-12 1983-07-12 Varian Associates, Inc. Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table
JPS60187911A (ja) 1984-03-05 1985-09-25 Sony Corp 磁気ヘツド装置
US4632719A (en) 1985-09-18 1986-12-30 Varian Associates, Inc. Semiconductor etching apparatus with magnetic array and vertical shield
DE3835153A1 (de) 1988-10-15 1990-04-26 Leybold Ag Vorrichtung zum aetzen von substraten durch eine glimmentladung
US5089083A (en) 1989-04-25 1992-02-18 Tokyo Electron Limited Plasma etching method
US5292399A (en) 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5463525A (en) 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5573596A (en) 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US5534752A (en) 1995-07-26 1996-07-09 Taiwan Semiconductor Manufacturing Company Shutter linkage for an ion implantation apparatus
US5942042A (en) 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6008130A (en) 1997-08-14 1999-12-28 Vlsi Technology, Inc. Polymer adhesive plasma confinement ring
JP4602545B2 (ja) 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
US6074488A (en) 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6019060A (en) 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
NL1013954C2 (nl) * 1999-12-24 2001-06-29 Xycarb Ceramics B V Werkwijze voor het vervaardigen van een elektrode voor een plasmareactor en een dergelijke elektrode.
US6433484B1 (en) 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6492774B1 (en) 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6974523B2 (en) * 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US6527911B1 (en) 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6887340B2 (en) 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
KR20040107983A (ko) * 2003-06-16 2004-12-23 삼성전자주식회사 반도체 제조 장치
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR20060005560A (ko) * 2004-07-13 2006-01-18 삼성전자주식회사 플라즈마를 이용하는 반도체 소자 제조 장비
KR100790392B1 (ko) * 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치

Also Published As

Publication number Publication date
MY147834A (en) 2013-01-31
TW200707578A (en) 2007-02-16
US20060278340A1 (en) 2006-12-14
KR20080021026A (ko) 2008-03-06
KR101257131B1 (ko) 2013-04-22
WO2006135909A1 (en) 2006-12-21
TWI386996B (zh) 2013-02-21
CN101199036B (zh) 2010-11-03
CN101199036A (zh) 2008-06-11
JP4751446B2 (ja) 2011-08-17
JP2008544499A (ja) 2008-12-04
US7837825B2 (en) 2010-11-23

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