DE60231498D1 - Ätzkammer mit veränderbarem plasmavolumen - Google Patents

Ätzkammer mit veränderbarem plasmavolumen

Info

Publication number
DE60231498D1
DE60231498D1 DE60231498T DE60231498T DE60231498D1 DE 60231498 D1 DE60231498 D1 DE 60231498D1 DE 60231498 T DE60231498 T DE 60231498T DE 60231498 T DE60231498 T DE 60231498T DE 60231498 D1 DE60231498 D1 DE 60231498D1
Authority
DE
Germany
Prior art keywords
plasma
volume
ätzkammer
processing chamber
plasma volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60231498T
Other languages
English (en)
Inventor
Bi-Ming Yen
Tuqiang Ni
Lumin Li
David Hemker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60231498D1 publication Critical patent/DE60231498D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
DE60231498T 2001-06-29 2002-06-21 Ätzkammer mit veränderbarem plasmavolumen Expired - Lifetime DE60231498D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/895,537 US6527911B1 (en) 2001-06-29 2001-06-29 Configurable plasma volume etch chamber
PCT/US2002/019695 WO2003003403A1 (en) 2001-06-29 2002-06-21 Configurable plasma volume etch chamber

Publications (1)

Publication Number Publication Date
DE60231498D1 true DE60231498D1 (de) 2009-04-23

Family

ID=25404649

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60231498T Expired - Lifetime DE60231498D1 (de) 2001-06-29 2002-06-21 Ätzkammer mit veränderbarem plasmavolumen

Country Status (9)

Country Link
US (1) US6527911B1 (de)
EP (1) EP1402560B1 (de)
JP (1) JP4475946B2 (de)
KR (1) KR100883948B1 (de)
CN (1) CN1309000C (de)
AT (1) ATE425547T1 (de)
DE (1) DE60231498D1 (de)
TW (1) TW550645B (de)
WO (1) WO2003003403A1 (de)

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Also Published As

Publication number Publication date
CN1309000C (zh) 2007-04-04
JP2005521229A (ja) 2005-07-14
ATE425547T1 (de) 2009-03-15
US6527911B1 (en) 2003-03-04
CN1550027A (zh) 2004-11-24
KR20040021620A (ko) 2004-03-10
KR100883948B1 (ko) 2009-02-18
WO2003003403A1 (en) 2003-01-09
EP1402560A1 (de) 2004-03-31
TW550645B (en) 2003-09-01
EP1402560B1 (de) 2009-03-11
JP4475946B2 (ja) 2010-06-09

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