SG162771A1 - Improvement of etch rate uniformity using the independent movement of electrode pieces - Google Patents
Improvement of etch rate uniformity using the independent movement of electrode piecesInfo
- Publication number
- SG162771A1 SG162771A1 SG201004056-6A SG2010040566A SG162771A1 SG 162771 A1 SG162771 A1 SG 162771A1 SG 2010040566 A SG2010040566 A SG 2010040566A SG 162771 A1 SG162771 A1 SG 162771A1
- Authority
- SG
- Singapore
- Prior art keywords
- improvement
- etch rate
- independent movement
- electrode pieces
- rate uniformity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/152,016 US20060278339A1 (en) | 2005-06-13 | 2005-06-13 | Etch rate uniformity using the independent movement of electrode pieces |
Publications (1)
Publication Number | Publication Date |
---|---|
SG162771A1 true SG162771A1 (en) | 2010-07-29 |
Family
ID=37067470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG201004056-6A SG162771A1 (en) | 2005-06-13 | 2006-06-12 | Improvement of etch rate uniformity using the independent movement of electrode pieces |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060278339A1 (en) |
JP (1) | JP4970434B2 (en) |
KR (2) | KR20130023390A (en) |
CN (1) | CN101194340B (en) |
SG (1) | SG162771A1 (en) |
TW (1) | TWI397100B (en) |
WO (1) | WO2006135924A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
US20070221332A1 (en) * | 2006-03-22 | 2007-09-27 | Tokyo Electron Limited | Plasma processing apparatus |
US20080277064A1 (en) * | 2006-12-08 | 2008-11-13 | Tes Co., Ltd. | Plasma processing apparatus |
KR100978754B1 (en) * | 2008-04-03 | 2010-08-30 | 주식회사 테스 | Plasma processing apparatus |
KR100823302B1 (en) * | 2006-12-08 | 2008-04-17 | 주식회사 테스 | Plasma processing apparatus |
US20080156772A1 (en) * | 2006-12-29 | 2008-07-03 | Yunsang Kim | Method and apparatus for wafer edge processing |
US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
US20090236214A1 (en) * | 2008-03-20 | 2009-09-24 | Karthik Janakiraman | Tunable ground planes in plasma chambers |
US8382941B2 (en) * | 2008-09-15 | 2013-02-26 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
US20130098390A1 (en) * | 2011-10-25 | 2013-04-25 | Infineon Technologies Ag | Device for processing a carrier and a method for processing a carrier |
US20140060739A1 (en) * | 2012-08-31 | 2014-03-06 | Rajinder Dhindsa | Rf ground return in plasma processing systems and methods therefor |
WO2015169385A1 (en) * | 2014-05-09 | 2015-11-12 | Ev Group E. Thallner Gmbh | Method and device for plasma treatment of substrates |
CN105789010B (en) * | 2014-12-24 | 2017-11-10 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and the adjusting method of plasma distribution |
CN117174641A (en) | 2017-04-07 | 2023-12-05 | 应用材料公司 | Plasma density control at substrate edge |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723227A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Plasma etching device |
JPS61164271U (en) * | 1985-04-01 | 1986-10-11 | ||
JPH03138382A (en) * | 1989-10-20 | 1991-06-12 | Nissin Electric Co Ltd | Reactive ion etching device |
US5508881A (en) * | 1994-02-01 | 1996-04-16 | Quality Microcircuits Corporation | Capacitors and interconnect lines for use with integrated circuits |
TW299559B (en) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US5585012A (en) * | 1994-12-15 | 1996-12-17 | Applied Materials Inc. | Self-cleaning polymer-free top electrode for parallel electrode etch operation |
JP2953974B2 (en) * | 1995-02-03 | 1999-09-27 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
JPH08321488A (en) * | 1995-05-26 | 1996-12-03 | Sony Corp | Dry etching method and magnetron rie equipment |
US5567640A (en) * | 1996-01-11 | 1996-10-22 | Vanguard International Semiconductor Corporation | Method for fabricating T-shaped capacitors in DRAM cells |
US6017825A (en) * | 1996-03-29 | 2000-01-25 | Lam Research Corporation | Etch rate loading improvement |
US5705438A (en) * | 1996-10-18 | 1998-01-06 | Vanguard International Semiconductor Corporation | Method for manufacturing stacked dynamic random access memories using reduced photoresist masking steps |
US5731130A (en) * | 1996-11-12 | 1998-03-24 | Vanguard International Semiconductor Corporation | Method for fabricating stacked capacitors on dynamic random access memory cells |
US5792693A (en) * | 1997-03-07 | 1998-08-11 | Vanguard International Semiconductor Corporation | Method for producing capacitors having increased surface area for dynamic random access memory |
US5780338A (en) * | 1997-04-11 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits |
JPH10289881A (en) * | 1997-04-15 | 1998-10-27 | Kokusai Electric Co Ltd | Plasma cvd device |
US5895250A (en) * | 1998-06-11 | 1999-04-20 | Vanguard International Semiconductor Corporation | Method of forming semicrown-shaped stacked capacitors for dynamic random access memory |
US6165276A (en) * | 1999-09-17 | 2000-12-26 | United Microelectronics Corp. | Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes |
US6432833B1 (en) * | 1999-12-20 | 2002-08-13 | Micron Technology, Inc. | Method of forming a self aligned contact opening |
US6485988B2 (en) * | 1999-12-22 | 2002-11-26 | Texas Instruments Incorporated | Hydrogen-free contact etch for ferroelectric capacitor formation |
WO2001050518A1 (en) * | 2000-01-03 | 2001-07-12 | Micron Technology, Inc. | Method of forming a self-aligned contact opening |
WO2001052302A1 (en) * | 2000-01-10 | 2001-07-19 | Tokyo Electron Limited | Segmented electrode assembly and method for plasma processing |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6492774B1 (en) * | 2000-10-04 | 2002-12-10 | Lam Research Corporation | Wafer area pressure control for plasma confinement |
KR100500938B1 (en) * | 2000-12-30 | 2005-07-14 | 주식회사 하이닉스반도체 | Method for forming capacitor |
US6319767B1 (en) * | 2001-03-05 | 2001-11-20 | Chartered Semiconductor Manufacturing Ltd. | Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique |
US6531324B2 (en) * | 2001-03-28 | 2003-03-11 | Sharp Laboratories Of America, Inc. | MFOS memory transistor & method of fabricating same |
US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
US6974523B2 (en) * | 2001-05-16 | 2005-12-13 | Lam Research Corporation | Hollow anode plasma reactor and method |
JP2002359232A (en) * | 2001-05-31 | 2002-12-13 | Tokyo Electron Ltd | Plasma treatment apparatus |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
US6717193B2 (en) * | 2001-10-09 | 2004-04-06 | Koninklijke Philips Electronics N.V. | Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
-
2005
- 2005-06-13 US US11/152,016 patent/US20060278339A1/en not_active Abandoned
-
2006
- 2006-06-12 KR KR1020137002561A patent/KR20130023390A/en not_active Application Discontinuation
- 2006-06-12 SG SG201004056-6A patent/SG162771A1/en unknown
- 2006-06-12 KR KR1020077029150A patent/KR101283830B1/en active IP Right Grant
- 2006-06-12 WO PCT/US2006/023114 patent/WO2006135924A1/en active Application Filing
- 2006-06-12 CN CN2006800208380A patent/CN101194340B/en active Active
- 2006-06-12 JP JP2008516039A patent/JP4970434B2/en active Active
- 2006-06-13 TW TW095121069A patent/TWI397100B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2006135924A9 (en) | 2007-02-22 |
KR101283830B1 (en) | 2013-07-08 |
JP2008544500A (en) | 2008-12-04 |
KR20080019225A (en) | 2008-03-03 |
WO2006135924A1 (en) | 2006-12-21 |
CN101194340B (en) | 2011-12-28 |
US20060278339A1 (en) | 2006-12-14 |
CN101194340A (en) | 2008-06-04 |
TWI397100B (en) | 2013-05-21 |
KR20130023390A (en) | 2013-03-07 |
TW200713389A (en) | 2007-04-01 |
JP4970434B2 (en) | 2012-07-04 |
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