TW200713389A - Improvement of etch rate uniformity using the independent movement of electrode pieces - Google Patents

Improvement of etch rate uniformity using the independent movement of electrode pieces

Info

Publication number
TW200713389A
TW200713389A TW095121069A TW95121069A TW200713389A TW 200713389 A TW200713389 A TW 200713389A TW 095121069 A TW095121069 A TW 095121069A TW 95121069 A TW95121069 A TW 95121069A TW 200713389 A TW200713389 A TW 200713389A
Authority
TW
Taiwan
Prior art keywords
improvement
etch rate
independent movement
electrode pieces
rate uniformity
Prior art date
Application number
TW095121069A
Other languages
Chinese (zh)
Other versions
TWI397100B (en
Inventor
Ji-Soo Kim
Dae-Han Choi
S M Reza Sadjadi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200713389A publication Critical patent/TW200713389A/en
Application granted granted Critical
Publication of TWI397100B publication Critical patent/TWI397100B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Abstract

A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
TW095121069A 2005-06-13 2006-06-13 Plasma reactor and method for using the same TWI397100B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/152,016 US20060278339A1 (en) 2005-06-13 2005-06-13 Etch rate uniformity using the independent movement of electrode pieces

Publications (2)

Publication Number Publication Date
TW200713389A true TW200713389A (en) 2007-04-01
TWI397100B TWI397100B (en) 2013-05-21

Family

ID=37067470

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121069A TWI397100B (en) 2005-06-13 2006-06-13 Plasma reactor and method for using the same

Country Status (7)

Country Link
US (1) US20060278339A1 (en)
JP (1) JP4970434B2 (en)
KR (2) KR20130023390A (en)
CN (1) CN101194340B (en)
SG (1) SG162771A1 (en)
TW (1) TWI397100B (en)
WO (1) WO2006135924A1 (en)

Cited By (2)

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TWI508632B (en) * 2008-03-20 2015-11-11 Applied Materials Inc Tunable ground planes in plasma chambers
US10790121B2 (en) 2017-04-07 2020-09-29 Applied Materials, Inc. Plasma density control on substrate edge

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US8012306B2 (en) 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US20070221332A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Plasma processing apparatus
KR100978754B1 (en) * 2008-04-03 2010-08-30 주식회사 테스 Plasma processing apparatus
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR100823302B1 (en) * 2006-12-08 2008-04-17 주식회사 테스 Plasma processing apparatus
US20080156772A1 (en) * 2006-12-29 2008-07-03 Yunsang Kim Method and apparatus for wafer edge processing
US20170213734A9 (en) * 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US8382941B2 (en) 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US20140060739A1 (en) * 2012-08-31 2014-03-06 Rajinder Dhindsa Rf ground return in plasma processing systems and methods therefor
CN107078013B (en) * 2014-05-09 2019-06-21 Ev 集团 E·索尔纳有限责任公司 The method and apparatus of corona treatment for substrate
CN105789010B (en) * 2014-12-24 2017-11-10 中微半导体设备(上海)有限公司 Plasma processing apparatus and the adjusting method of plasma distribution

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508632B (en) * 2008-03-20 2015-11-11 Applied Materials Inc Tunable ground planes in plasma chambers
US10774423B2 (en) 2008-03-20 2020-09-15 Applied Materials, Inc. Tunable ground planes in plasma chambers
US10790121B2 (en) 2017-04-07 2020-09-29 Applied Materials, Inc. Plasma density control on substrate edge
US11495440B2 (en) 2017-04-07 2022-11-08 Applied Materials, Inc. Plasma density control on substrate edge

Also Published As

Publication number Publication date
WO2006135924A9 (en) 2007-02-22
KR101283830B1 (en) 2013-07-08
CN101194340B (en) 2011-12-28
US20060278339A1 (en) 2006-12-14
WO2006135924A1 (en) 2006-12-21
JP4970434B2 (en) 2012-07-04
SG162771A1 (en) 2010-07-29
KR20130023390A (en) 2013-03-07
CN101194340A (en) 2008-06-04
JP2008544500A (en) 2008-12-04
KR20080019225A (en) 2008-03-03
TWI397100B (en) 2013-05-21

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