SG161170A1 - Method for polishing both sides of a semiconductor wafer - Google Patents

Method for polishing both sides of a semiconductor wafer

Info

Publication number
SG161170A1
SG161170A1 SG200906858-6A SG2009068586A SG161170A1 SG 161170 A1 SG161170 A1 SG 161170A1 SG 2009068586 A SG2009068586 A SG 2009068586A SG 161170 A1 SG161170 A1 SG 161170A1
Authority
SG
Singapore
Prior art keywords
polishing
semiconductor wafer
frontside
polishing pad
agent solution
Prior art date
Application number
SG200906858-6A
Other languages
English (en)
Inventor
Juergen Schwandner
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG161170A1 publication Critical patent/SG161170A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200906858-6A 2008-10-29 2009-10-14 Method for polishing both sides of a semiconductor wafer SG161170A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008053610A DE102008053610B4 (de) 2008-10-29 2008-10-29 Verfahren zum beidseitigen Polieren einer Halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG161170A1 true SG161170A1 (en) 2010-05-27

Family

ID=42117783

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906858-6A SG161170A1 (en) 2008-10-29 2009-10-14 Method for polishing both sides of a semiconductor wafer

Country Status (7)

Country Link
US (1) US9224613B2 (zh)
JP (1) JP5557506B2 (zh)
KR (1) KR101103415B1 (zh)
CN (1) CN101722462B (zh)
DE (1) DE102008053610B4 (zh)
SG (1) SG161170A1 (zh)
TW (1) TWI567811B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133355B1 (ko) * 2009-10-28 2012-04-06 실트로닉 아게 반도체 웨이퍼의 연마 방법
DE102009051007B4 (de) 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009057593A1 (de) * 2009-12-09 2011-06-16 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102011083041B4 (de) 2010-10-20 2018-06-07 Siltronic Ag Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings
JP5750877B2 (ja) * 2010-12-09 2015-07-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法およびウェーハの片面研磨装置
JP5614397B2 (ja) * 2011-11-07 2014-10-29 信越半導体株式会社 両面研磨方法
KR102028217B1 (ko) * 2011-11-25 2019-10-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6077209B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
DE102011089362B4 (de) * 2011-12-21 2014-01-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
JP6100002B2 (ja) * 2013-02-01 2017-03-22 株式会社荏原製作所 基板裏面の研磨方法および基板処理装置
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102013213838A1 (de) 2013-07-15 2014-09-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102015224933A1 (de) 2015-12-11 2017-06-14 Siltronic Ag Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe
EP3604475A4 (en) 2017-03-23 2020-12-23 Fujimi Incorporated POLISHING COMPOSITION
DE102018221922A1 (de) * 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
JP3510036B2 (ja) 1996-02-22 2004-03-22 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
US6722962B1 (en) * 1997-04-22 2004-04-20 Sony Corporation Polishing system, polishing method, polishing pad, and method of forming polishing pad
KR100243292B1 (ko) * 1997-05-07 2000-02-01 윤종용 연마액의ph를조정하는반도체제조를위한화학적기계연마방법
JPH11204467A (ja) 1998-01-19 1999-07-30 Sony Corp 半導体製造装置および半導体装置の製造方法
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
JP3858462B2 (ja) * 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法
JP2000080350A (ja) * 1998-09-07 2000-03-21 Speedfam-Ipec Co Ltd 研磨用組成物及びそれによるポリッシング加工方法
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
KR20010039590A (ko) * 1999-04-29 2001-05-15 마에다 시게루 작업대상물을 폴리싱하는 방법 및 장치
US6331135B1 (en) * 1999-08-31 2001-12-18 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives
JP3439402B2 (ja) 1999-11-05 2003-08-25 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US20010039101A1 (en) * 2000-04-13 2001-11-08 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Method for converting a reclaim wafer into a semiconductor wafer
US6387289B1 (en) * 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
WO2002035593A1 (fr) * 2000-10-26 2002-05-02 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes, appareil de polissage et plaquette
JP3950622B2 (ja) 2000-10-25 2007-08-01 スピードファム株式会社 ナノトポグラフィ評価用基準ウェーハとその製造方法
DE10054159A1 (de) 2000-11-02 2002-05-16 Wacker Siltronic Halbleitermat Verfahren zur Montage von Halbleiterscheiben
JP3617665B2 (ja) 2001-01-29 2005-02-09 三菱住友シリコン株式会社 半導体ウェーハ用研磨布
JP2002252189A (ja) 2001-02-26 2002-09-06 Mitsubishi Materials Silicon Corp 半導体ウェーハ用研磨液
DE10142400B4 (de) 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
JP2005525244A (ja) 2002-01-17 2005-08-25 エイエスエム・ナトゥール・インコーポレーテッド 瞬鋭なる終点検出を用いた高等な化学機械的研磨システム
DE60315257T2 (de) * 2002-02-20 2008-04-17 Ebara Corp. Polierverfahren und polierflüssigkeit
DE10328842B4 (de) * 2003-06-26 2007-03-01 Siltronic Ag Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US20050121969A1 (en) * 2003-12-04 2005-06-09 Ismail Emesh Lubricant for wafer polishing using a fixed abrasive pad
US20050227590A1 (en) 2004-04-09 2005-10-13 Chien-Min Sung Fixed abrasive tools and associated methods
JP2006093655A (ja) 2004-08-24 2006-04-06 Disco Abrasive Syst Ltd 研磨液，及び研磨装置
DE102004054566B4 (de) * 2004-11-11 2008-04-30 Siltronic Ag Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit
JP4820108B2 (ja) 2005-04-25 2011-11-24 コマツＮｔｃ株式会社 半導体ウエーハの製造方法およびワークのスライス方法ならびにそれらに用いられるワイヤソー
JP4942516B2 (ja) 2007-03-07 2012-05-30 信越ポリマー株式会社 基板収納容器用の収容槽
JP5037974B2 (ja) 2007-03-14 2012-10-03 株式会社岡本工作機械製作所 研磨加工ステージにおける半導体基板の監視機器および監視方法
DE102007035266B4 (de) * 2007-07-27 2010-03-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium

Also Published As

Publication number Publication date
CN101722462A (zh) 2010-06-09
US9224613B2 (en) 2015-12-29
DE102008053610B4 (de) 2011-03-31
JP2010109370A (ja) 2010-05-13
JP5557506B2 (ja) 2014-07-23
KR20100047802A (ko) 2010-05-10
CN101722462B (zh) 2013-06-19
DE102008053610A1 (de) 2010-07-01
KR101103415B1 (ko) 2012-01-06
TW201017745A (en) 2010-05-01
TWI567811B (zh) 2017-01-21
US20100104806A1 (en) 2010-04-29

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