SG160189A1 - Crystallization apparatus, crystallization method, and phase shift mask - Google Patents

Crystallization apparatus, crystallization method, and phase shift mask

Info

Publication number
SG160189A1
SG160189A1 SG200506254-2A SG2005062542A SG160189A1 SG 160189 A1 SG160189 A1 SG 160189A1 SG 2005062542 A SG2005062542 A SG 2005062542A SG 160189 A1 SG160189 A1 SG 160189A1
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
crystallization
crystallization method
chuck
Prior art date
Application number
SG200506254-2A
Other languages
English (en)
Inventor
Yukio Taniguchi
Masakiyo Matsumura
Yoshinobu Kimura
Original Assignee
Adv Lcd Tech Dev Ct Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adv Lcd Tech Dev Ct Co Ltd filed Critical Adv Lcd Tech Dev Ct Co Ltd
Publication of SG160189A1 publication Critical patent/SG160189A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
SG200506254-2A 2002-04-23 2003-03-19 Crystallization apparatus, crystallization method, and phase shift mask SG160189A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002120312 2002-04-23

Publications (1)

Publication Number Publication Date
SG160189A1 true SG160189A1 (en) 2010-04-29

Family

ID=29267365

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200506254-2A SG160189A1 (en) 2002-04-23 2003-03-19 Crystallization apparatus, crystallization method, and phase shift mask

Country Status (7)

Country Link
US (1) US7172841B2 (zh)
JP (1) JP4620450B2 (zh)
KR (1) KR20050004763A (zh)
CN (2) CN1975567A (zh)
SG (1) SG160189A1 (zh)
TW (1) TW200305792A (zh)
WO (1) WO2003092061A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003049175A1 (fr) * 2001-12-07 2003-06-12 Sony Corporation Irradiateur a faisceaux et dispositif de recuit pour laser
KR100450674B1 (ko) * 2002-03-12 2004-10-01 삼성전자주식회사 포토 마스크, 그 제조 방법 및 이를 이용한 웨이퍼 노광설비의 광학적 특성을 공정 중에 측정하는 방법
SG160189A1 (en) * 2002-04-23 2010-04-29 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, and phase shift mask
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP4347546B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置、結晶化方法および光学系
TWI301295B (en) * 2002-07-24 2008-09-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, thim film transistor and display apparatus
KR100486676B1 (ko) * 2002-10-04 2005-05-03 엘지.필립스 엘시디 주식회사 위상변이 레이저 마스크 및 이를 이용한 순차측면고상결정화 방법
TWI303452B (en) * 2002-11-01 2008-11-21 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus and crystallization method
US20040101785A1 (en) * 2002-11-21 2004-05-27 Brown David R. Process of improved grayscale lithography
JP4555033B2 (ja) * 2003-12-25 2010-09-29 株式会社 液晶先端技術開発センター 結晶化装置並びに方法、電子デバイスの製造方法、及び光変調素子
TW200533982A (en) * 2004-02-17 2005-10-16 Adv Lcd Tech Dev Ct Co Ltd Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, device, and light modulation element
JP4834853B2 (ja) 2004-06-10 2011-12-14 シャープ株式会社 薄膜トランジスタ回路、薄膜トランジスタ回路の設計方法、薄膜トランジスタ回路の設計プログラム、設計プログラム記録媒体、及び表示装置
JP2006024753A (ja) * 2004-07-08 2006-01-26 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタの製造方法、薄膜トランジスタ、半導体装置の製造方法および表示装置
JP4711166B2 (ja) * 2004-08-03 2011-06-29 株式会社 液晶先端技術開発センター 結晶化装置、および結晶化方法
JP2006049481A (ja) * 2004-08-03 2006-02-16 Advanced Lcd Technologies Development Center Co Ltd 結晶化装置、結晶化方法、および位相変調素子
JP4770140B2 (ja) * 2004-08-17 2011-09-14 富士電機株式会社 半導体素子の製造方法
US7556334B2 (en) * 2004-11-04 2009-07-07 Applied Materials, Inc. Methods and apparatus for aligning print heads
JP2007134637A (ja) * 2005-11-14 2007-05-31 Nec Corp 半導体薄膜の製造装置及び半導体薄膜の製造方法
JP2007165716A (ja) * 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
JP2007200945A (ja) * 2006-01-23 2007-08-09 Shimadzu Corp 結晶化装置
US7977752B2 (en) 2006-06-26 2011-07-12 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
JP4521561B2 (ja) * 2006-12-19 2010-08-11 レーザーテック株式会社 フォーカス制御方法及び位相シフト量測定装置
DE102011013370A1 (de) * 2011-03-09 2012-09-13 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN106660170B (zh) * 2014-07-01 2018-08-21 株式会社村田制作所 激光加工用掩模
KR102307499B1 (ko) * 2014-10-06 2021-10-01 삼성디스플레이 주식회사 위상변이 마스크 및 이를 이용한 디스플레이 장치 제조방법
US10859903B1 (en) * 2017-12-15 2020-12-08 Seagate Technology Llc Alternating phase shift mask
KR102689657B1 (ko) * 2020-06-23 2024-07-31 삼성전자주식회사 레이저 절단 장치

Citations (3)

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Publication number Priority date Publication date Assignee Title
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
EP1074642A2 (en) * 1999-08-06 2001-02-07 Sony Corporation Method of crystallizing a semiconductor thin film by laser irradiation
GB2354111A (en) * 1999-07-13 2001-03-14 Nec Corp Method for forming semiconductor films at desired portions on a substrate

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US4309225A (en) 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
JP3180481B2 (ja) * 1992-11-24 2001-06-25 日新電機株式会社 薄膜トランジスタ用単結晶シリコン層の形成方法
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
US6749971B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with chrome border around phase 180 regions
SG160189A1 (en) * 2002-04-23 2010-04-29 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, and phase shift mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
GB2354111A (en) * 1999-07-13 2001-03-14 Nec Corp Method for forming semiconductor films at desired portions on a substrate
EP1074642A2 (en) * 1999-08-06 2001-02-07 Sony Corporation Method of crystallizing a semiconductor thin film by laser irradiation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A NEW NUCLEATION-SITE- CONTROL EXCIMER-LASER-CRYSTALLIZATION METHOD *

Also Published As

Publication number Publication date
JP4620450B2 (ja) 2011-01-26
WO2003092061A1 (en) 2003-11-06
JPWO2003092061A1 (ja) 2005-09-02
US7172841B2 (en) 2007-02-06
CN1975567A (zh) 2007-06-06
CN1537323A (zh) 2004-10-13
US20040126674A1 (en) 2004-07-01
CN1327487C (zh) 2007-07-18
KR20050004763A (ko) 2005-01-12
TW200305792A (en) 2003-11-01

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