SG155159A1 - Stripper for dry film removal - Google Patents

Stripper for dry film removal

Info

Publication number
SG155159A1
SG155159A1 SG200901834-2A SG2009018342A SG155159A1 SG 155159 A1 SG155159 A1 SG 155159A1 SG 2009018342 A SG2009018342 A SG 2009018342A SG 155159 A1 SG155159 A1 SG 155159A1
Authority
SG
Singapore
Prior art keywords
mixtures
group
monoethanolamine
stripper
preferred
Prior art date
Application number
SG200901834-2A
Other languages
English (en)
Inventor
Wen Dar Liu
Yi-Chia Lee
Archie Liao
Madhukar Bhaskara Rao
Matthew I Egbe
Chimin Cheu
Michael Walter Legenza
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG155159A1 publication Critical patent/SG155159A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
SG200901834-2A 2008-03-07 2009-03-04 Stripper for dry film removal SG155159A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3459208P 2008-03-07 2008-03-07
US12/394,183 US8357646B2 (en) 2008-03-07 2009-02-27 Stripper for dry film removal

Publications (1)

Publication Number Publication Date
SG155159A1 true SG155159A1 (en) 2009-09-30

Family

ID=40551968

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200901834-2A SG155159A1 (en) 2008-03-07 2009-03-04 Stripper for dry film removal

Country Status (8)

Country Link
US (1) US8357646B2 (fr)
EP (1) EP2098911B1 (fr)
JP (1) JP4955723B2 (fr)
KR (2) KR20090096369A (fr)
CN (1) CN101544932B (fr)
MY (1) MY158089A (fr)
SG (1) SG155159A1 (fr)
TW (1) TWI420262B (fr)

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US8357646B2 (en) 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
SG175273A1 (en) * 2009-05-07 2011-11-28 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
TW201404877A (zh) * 2012-05-18 2014-02-01 Advanced Tech Materials 用於改善有機殘餘物移除之具有低銅蝕刻速率之清潔水溶液
KR101406761B1 (ko) * 2012-10-22 2014-07-02 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정방법
JP5885041B1 (ja) * 2014-10-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
US9401336B2 (en) 2014-11-04 2016-07-26 International Business Machines Corporation Dual layer stack for contact formation
JP5885043B1 (ja) * 2014-12-05 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液とその製造方法
US10073351B2 (en) * 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
JP5885045B1 (ja) * 2015-01-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液とその製造方法
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
KR102637508B1 (ko) * 2015-08-03 2024-02-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 세정 조성물
JP2017075992A (ja) * 2015-10-13 2017-04-20 ナガセケムテックス株式会社 フォトレジスト剥離液
CN105549129B (zh) * 2015-12-11 2017-04-05 西安交通大学 一种提高大面积微透镜阵列均匀成形的方法
TWI790196B (zh) * 2015-12-11 2023-01-21 日商富士軟片股份有限公司 洗淨液、基板洗淨方法及半導體元件的製造方法
KR102067444B1 (ko) * 2015-12-11 2020-01-17 후지필름 가부시키가이샤 반도체 디바이스용 처리액의 보관 방법, 처리액 수용체
CN106919011B (zh) * 2015-12-25 2021-12-17 安集微电子科技（上海）股份有限公司 一种富含水的羟胺剥离清洗液
CN109195720B (zh) * 2016-05-23 2021-10-29 富士胶片电子材料美国有限公司 用于从半导体基板去除光刻胶的剥离组合物
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
CN111448520B (zh) * 2017-12-08 2023-11-17 汉高股份有限及两合公司 光刻胶剥离剂组合物
CN109270808A (zh) * 2018-10-25 2019-01-25 健鼎（湖北）电子有限公司 一种去除干膜的方法
CN115094423B (zh) * 2022-08-24 2022-11-08 深圳市板明科技股份有限公司 一种适用于铝基材线路板的无机退膜液及其应用

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JP3407835B2 (ja) * 1995-03-09 2003-05-19 東京応化工業株式会社 基板端縁部被膜の除去方法及び除去装置
JP2950407B2 (ja) 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法
JPH11282176A (ja) 1998-03-26 1999-10-15 Toray Fine Chemical Kk フォトレジスト剥離用組成物
JP3773227B2 (ja) 1997-10-16 2006-05-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
US7579308B2 (en) * 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
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KR100742119B1 (ko) 2001-02-16 2007-07-24 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
US7543592B2 (en) * 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
JP2003228179A (ja) 2002-01-31 2003-08-15 Mitsubishi Gas Chem Co Inc 銅配線基板向けアミン含有レジスト剥離液および剥離方法
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US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
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US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
US7674755B2 (en) * 2005-12-22 2010-03-09 Air Products And Chemicals, Inc. Formulation for removal of photoresist, etch residue and BARC
KR101328097B1 (ko) * 2006-01-11 2013-11-13 주식회사 동진쎄미켐 티에프티 엘시디용 칼라 레지스트 박리액 조성물
JP4906516B2 (ja) 2006-01-11 2012-03-28 東進セミケム株式会社 Ｔｆｔ−ｌｃｄ用カラーレジスト剥離液組成物
US7534753B2 (en) 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
JP2008007660A (ja) 2006-06-30 2008-01-17 Sanyo Chem Ind Ltd 洗浄剤
FR2912151B1 (fr) 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
JP2011502281A (ja) * 2007-10-31 2011-01-20 イー．ケー．シー．テクノロジー．インコーポレーテッド フォトレジスト剥離用化合物
US8357646B2 (en) 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal

Also Published As

Publication number Publication date
US8357646B2 (en) 2013-01-22
JP4955723B2 (ja) 2012-06-20
US20090227483A1 (en) 2009-09-10
EP2098911A3 (fr) 2011-03-09
CN101544932A (zh) 2009-09-30
JP2009217267A (ja) 2009-09-24
KR20120062650A (ko) 2012-06-14
KR101384106B1 (ko) 2014-04-10
CN101544932B (zh) 2013-07-17
EP2098911A2 (fr) 2009-09-09
MY158089A (en) 2016-08-29
TW200943004A (en) 2009-10-16
EP2098911B1 (fr) 2013-09-11
TWI420262B (zh) 2013-12-21
KR20090096369A (ko) 2009-09-10

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